Instrumentation Amplifier, 1 Func, CMOS, CDIP18
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | General Electric Solid State |
包装说明 | DIP, DIP18,.3 |
Reach Compliance Code | unknown |
放大器类型 | INSTRUMENTATION AMPLIFIER |
JESD-30 代码 | R-XDIP-T18 |
JESD-609代码 | e0 |
功能数量 | 1 |
端子数量 | 18 |
最高工作温度 | 125 °C |
最低工作温度 | -55 °C |
封装主体材料 | CERAMIC |
封装代码 | DIP |
封装等效代码 | DIP18,.3 |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
认证状态 | Not Qualified |
筛选级别 | MIL-STD-883 Class C |
表面贴装 | NO |
技术 | CMOS |
温度等级 | MILITARY |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE |
端子节距 | 2.54 mm |
端子位置 | DUAL |
ICL7606MJN/C | ICL7606CJN | ICL7606IJN | ICL7606MJN/883B | ICL7605CJN | ICL7605IJN | ICL7605MJN | ICL7605MJN/883B | ICL7605MJN/883C | |
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描述 | Instrumentation Amplifier, 1 Func, CMOS, CDIP18 | Instrumentation Amplifier, 1 Func, CMOS, CDIP18, | Instrumentation Amplifier, 1 Func, CMOS, CDIP18, | Instrumentation Amplifier, 1 Func, CMOS, CDIP18 | Instrumentation Amplifier, 1 Func, CMOS, CDIP18, | Instrumentation Amplifier, 1 Func, CMOS, CDIP18, | Instrumentation Amplifier, 1 Func, CMOS, CDIP18, | Instrumentation Amplifier, 1 Func, CMOS, CDIP18 | Instrumentation Amplifier, 1 Func, CMOS, CDIP18 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
厂商名称 | General Electric Solid State | General Electric Solid State | General Electric Solid State | General Electric Solid State | General Electric Solid State | General Electric Solid State | General Electric Solid State | General Electric Solid State | General Electric Solid State |
包装说明 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
放大器类型 | INSTRUMENTATION AMPLIFIER | INSTRUMENTATION AMPLIFIER | INSTRUMENTATION AMPLIFIER | INSTRUMENTATION AMPLIFIER | INSTRUMENTATION AMPLIFIER | INSTRUMENTATION AMPLIFIER | INSTRUMENTATION AMPLIFIER | INSTRUMENTATION AMPLIFIER | INSTRUMENTATION AMPLIFIER |
JESD-30 代码 | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 18 | 18 | 18 | 18 | 18 | 18 | 18 | 18 | 18 |
最高工作温度 | 125 °C | 70 °C | 85 °C | 125 °C | 70 °C | 85 °C | 125 °C | 125 °C | 125 °C |
最低工作温度 | -55 °C | - | -25 °C | -55 °C | - | -25 °C | -55 °C | -55 °C | -55 °C |
封装主体材料 | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
封装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
封装等效代码 | DIP18,.3 | DIP18,.3 | DIP18,.3 | DIP18,.3 | DIP18,.3 | DIP18,.3 | DIP18,.3 | DIP18,.3 | DIP18,.3 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | MILITARY | COMMERCIAL | OTHER | MILITARY | COMMERCIAL | OTHER | MILITARY | MILITARY | MILITARY |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
标称负供电电压 (Vsup) | - | - | - | - | -5 V | -5 V | -5 V | -5 V | -5 V |
电源 | - | - | - | - | +-5 V | +-5 V | +-5 V | +-5 V | +-5 V |
标称供电电压 (Vsup) | - | - | - | - | 5 V | 5 V | 5 V | 5 V | 5 V |
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