Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | NTE |
Reach Compliance Code | unknown |
ECG2396 | ECG2386 | ECG2395 | ECG2392 | ECG66 | ECG2372 | ECG2373 | ECG2383 | ECG2384 | |
---|---|---|---|---|---|---|---|---|---|
描述 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Transistor, | Transistor, | Transistor, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
厂商名称 | NTE | NTE | NTE | NTE | NTE | NTE | NTE | NTE | NTE |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
配置 | - | Single | - | Single | Single | Single | Single | Single | Single |
最大漏极电流 (Abs) (ID) | - | 6 A | - | 32 A | 12 A | 3.5 A | 11 A | 8 A | 6 A |
FET 技术 | - | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码 | - | e0 | - | e0 | e0 | e0 | e0 | e0 | e0 |
工作模式 | - | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
极性/信道类型 | - | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | N-CHANNEL |
最大功率耗散 (Abs) | - | 150 W | - | 125 W | 75 W | 40 W | 125 W | 75 W | 125 W |
表面贴装 | - | NO | - | NO | NO | NO | NO | NO | NO |
端子面层 | - | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
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