SMBG5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Stand-off Voltage
5.0 to 188V
Peak Pulse Power
600W
Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
DO-215AA (SMBG)
Cathode Band
0.083 (2.10)
0.077 (1.96)
0.155 (3.94)
0.130 (3.30)
ed e
end ang
Ext e R
ltag
Vo
Dimensions in inches
and (millimeters)
0.008 (0.20)
0.004 (0.10)
Mounting Pad Layout
0.165 (4.19)
0.085 (2.16)
0.060(1.27)
0.180 (4.57)
0.160 (4.06)
0.016 (0.41)
0.006 (0.15)
0.058 (1.47)
0.038 (0.97)
0.020
(0.51) Max.
0.255 (6.48)
0.235 (5.97)
0.095 (2.41)
0.075 (1.90)
0.030 (0.76)
0.015 (0.38)
SEATING
PLANE
Features
• Underwriters Laboratory Recognition under UL standard
for safety 497B: Isolated Loop Circuit Protection
• Low profile package with built-in strain relief for surface
mounted applications
• Glass passivated junction
• Low incremental surge resistance, excellent clamping
capability
• 600W peak pulse power capability with a 10/1000µs
waveform, repetition rate (duty cycle): 0.01%
• Very fast response time
• High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mechanical Data
Case:
JEDEC DO-215AA molded plastic over
passivated junction
Terminals:
Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity:
For unidirectional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
Weight:
0.003 oz., 0.093 g
Flammability:
Epoxy is rated UL 94V-0
Packaging Codes – Options (Antistatic):
51 – 2K per Bulk box, 20K/carton
52 – 750 per 7" plastic Reel (12mm tape), 15K/carton
5B – 3.2K per 13" plastic Reel (12mm tape), 32K/carton
Devices for Bidirectional Applications
For bi-directional devices, use suffix C or CA (e.g. SMBJ10C, SMBJ10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Peak pulse power dissipation with
a 10/1000µs waveform
(1)(2)
(Fig. 1)
Peak pulse current with a 10/1000µs waveform
(1)
Peak forward surge current 8.3ms single half sine-wave
uni-directional only
(2)
Typical thermal resistance, junction to ambient
(4)
Typical thermal resistance, junction to lead
Operating junction and storage temperature range
Symbol
P
PPM
I
PPM
I
FSM
R
θJA
R
θJL
T
J
, T
STG
Value
Minimum 600
See Table Below
100
100
20
–55 to +150
Unit
W
A
A
°C/W
°C/W
°C
Notes:
(1) Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25°C per Fig. 2
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
Document Number 88456
24-Jul-03
www.vishay.com
1
SMBG5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified. V
F
= 3.5V at I
F
= 50A (uni-directional only)
Device Type
Modified
Gull Wing
+SMBG5.0
+SMBG5.0A
(5)
+SMBG6.0
+SMBG6.0A
+SMBG6.5
+SMBG6.5A
+SMBG7.0
+SMBG7.0A
+SMBG7.5
+SMBG7.5A
+SMBG8.0
+SMBG8.0A
+SMBG8.5
+SMBG8.5A
+SMBG9.0
+SMBG9.0A
+SMBG10
+SMBG10A
+SMBG11
+SMBG11A
+SMBG12
+SMBG12A
+SMBG13
+SMBG13A
+SMBG14
+SMBG14A
+SMBG15
+SMBG15A
+SMBG16
+SMBG16A
+SMBG17
+SMBG17A
+SMBG18
+SMBG18A
+SMBG20
+SMBG20A
+SMBG22
+SMBG22A
+SMBG24
+SMBG24A
+SMBG26
+SMBG26A
+SMBG28
+SMBG28A
+SMBG30
+SMBG30A
Device
Marking
Code
UNI
BI
KD
KD
KE
KE
KF
KF
KG
KG
KH
AH
KK
AK
KL
KL
KM
KM
KN
AN
KP
AP
KQ
AQ
KR
AR
KS
AS
KT
AT
KU
AU
KV
AV
KW
AW
KX
AX
KY
KY
KZ
KZ
LD
BD
LE
BE
LF
LF
LG
LG
LH
BH
LK
BK
LL
BL
LM
BM
LN
LN
LP
LM
LQ
LQ
LR
LR
LS
BS
LT
BT
LU
LU
LV
LV
LW
BW
LX
BX
LY
BY
LZ
BZ
MD
CD
ME
CE
MF
MF
MG
MG
MH
CH
MK
CK
Breakdown Voltage
(1)
V
(BR)
at I
T
(V)
Min
Max
6.40
7.82
6.40
7.07
6.67
8.15
6.67
7.37
7.22
8.82
7.22
7.98
7.78
9.51
7.78
8.60
8.33
10.2
8.33
9.21
8.89
10.9
8.89
9.83
9.44
11.5
9.44
10.4
10.0
12.2
10.0
11.1
11.1
13.6
11.1
12.3
12.2
14.9
12.2
13.5
13.3
16.3
13.3
14.7
14.4
17.6
14.4
15.9
15.6
19.1
15.6
17.2
16.7
20.4
16.7
18.5
17.8
21.8
17.8
19.7
18.9
23.1
18.9
20.9
20.0
24.4
20.0
22.1
22.2
27.1
22.2
24.5
24.4
29.8
24.4
26.9
26.7
32.6
26.7
29.5
28.9
35.3
28.9
31.9
31.1
38.0
31.1
34.4
33.3
40.7
33.3
36.8
Test
Current
I
T
(mA)
10
10
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Surge
Clamping
at V
Current I
PPM
Voltage at I
PPM
WM
I
D
(µA)
(3)
(A)
(2)
V
C
(V)
800
62.5
9.6
800
65.2
9.2
800
52.6
11.4
800
58.3
10.3
500
48.8
12.3
500
53.6
11.2
200
45.1
13.3
200
50.0
12.0
100
42.0
14.3
100
46.5
12.9
50
40.0
15.0
50
44.1
13.6
20
37.7
15.9
20
41.7
14.4
10
35.5
16.9
10
39.0
15.4
5.0
31.9
18.8
5.0
35.3
17.0
5.0
29.9
20.1
5.0
33.0
18.2
5.0
27.3
22.0
5.0
30.2
19.9
1.0
25.2
23.8
1.0
27.9
21.5
1.0
23.3
25.8
1.0
25.9
23.2
1.0
22.3
26.9
1.0
24.6
24.4
1.0
20.8
28.8
1.0
23.1
26.0
1.0
19.7
30.5
1.0
21.7
27.6
1.0
18.6
32.2
1.0
20.5
29.2
1.0
16.8
35.8
1.0
18.5
32.4
1.0
15.2
39.4
1.0
16.9
35.5
1.0
14.0
43.0
1.0
15.4
38.9
1.0
12.9
46.6
1.0
14.3
42.1
1.0
12.0
50.0
1.0
13.2
45.4
1.0
11.2
53.5
1.0
12.4
48.4
Notes:
(1) Pulse test: t
p
≤
50ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having V
WM
of 10 Volts and less, the I
D
limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bidirectional SMBG/SMBJ5.0CA, the maximum V
(BR)
is 7.25V
+ Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766
for both uni-directional and bi-directional devices
www.vishay.com
2
Document Number 88456
24-Jul-03
SMBG5.0 thru 188CA
Vishay Semiconductors
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified. V
F
= 3.5V at I
F
= 50A (uni-directional only)
Device Type
Modified
Gull Wing
+SMBG33
+SMBG33A
+SMBG36
+SMBG36A
+SMBG40
+SMBG40A
+SMBG43
+SMBG43A
+SMBG45
+SMBG45A
+SMBG48
+SMBG48A
+SMBG51
+SMBG51A
+SMBG54
+SMBG54A
+SMBG58
+SMBG58A
+SMBG60
+SMBG60A
+SMBG64
+SMBG64A
+SMBG70
+SMBG70A
+SMBG75
+SMBG75A
+SMBG78
+SMBG78A
+SMBG85
+SMBG85A
+SMBG90
+SMBG90A
+SMBG100
+SMBG100A
+SMBG110
+SMBG110A
+SMBG120
+SMBG120A
+SMBG130
+SMBG130A
+SMBG150
+SMBG150A
+SMBG160
+SMBG160A
+SMBG170
+SMBG170A
SMBG188
SMBG188A
Device
Marking
Code
UNI
BI
ML
CL
MM
CM
MN
CN
MP
CP
MQ
CQ
MR
CR
MS
CS
MT
CT
MU
MU
MV
MV
MW
MW
MX
MX
MY
MY
MZ
MZ
ND
ND
NE
NE
NF
NF
NG
NG
NH
NH
NK
NK
NL
NL
NM
NM
NN
NN
NP
NP
NQ
NQ
NR
NR
NS
NS
NT
NT
NU
NU
NV
NV
NW
NW
NX
NX
NY
NY
NZ
NZ
PD
PD
PE
PE
PF
PF
PG
PG
PH
PH
PK
PK
PL
PL
PM
PM
PN
PN
PP
PP
PQ
PQ
PR
PR
PT
PT
PS
PS
Breakdown Voltage
(1)
V
(BR)
at I
T
(V)
Min
Max
36.7
44.9
36.7
40.6
40.0
48.9
40.0
44.2
44.4
54.3
44.4
49.1
47.8
58.4
47.8
52.8
50.0
61.1
50.0
55.3
53.3
65.1
53.3
58.9
56.7
69.3
56.7
62.7
60.0
73.3
60.0
66.3
64.4
78.7
64.4
71.2
66.7
81.5
66.7
73.7
71.1
86.9
71.1
78.6
77.8
95.1
77.8
86.0
83.3
102
83.3
92.1
86.7
106
86.7
95.8
94.4
115
94.4
104
100
122
100
111
111
136
111
123
122
149
122
135
133
163
133
147
144
176
144
159
167
204
167
185
178
218
178
197
189
231
189
209
209
255
209
231
Test
Current
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
33
33
36
36
40
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
188
188
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Surge
Clamping
at V
Current I
PPM
Voltage at I
PPM
WM
I
D
(µA)
(3)
(A)
(2)
V
C
(V)
1.0
10.2
59.0
1.0
11.3
53.3
1.0
9.3
64.3
1.0
10.3
58.1
1.0
8.4
71.4
1.0
9.3
64.5
1.0
7.8
76.7
1.0
8.6
69.4
1.0
7.5
80.3
1.0
8.3
72.7
1.0
7.0
85.5
1.0
7.8
77.4
1.0
6.6
91.1
1.0
7.3
82.4
1.0
6.2
96.3
1.0
6.9
87.1
1.0
5.8
103
1.0
6.4
93.6
1.0
5.6
107
1.0
6.2
96.8
1.0
5.3
114
1.0
5.8
103
1.0
4.8
125
1.0
5.3
113
1.0
4.5
134
1.0
5.0
121
1.0
4.3
139
1.0
4.8
126
1.0
4.0
151
1.0
4.4
137
1.0
3.8
160
1.0
4.1
146
1.0
3.4
179
1.0
3.7
162
1.0
3.1
196
1.0
3.4
177
1.0
2.8
214
1.0
3.1
193
1.0
2.6
231
1.0
2.9
209
1.0
2.2
268
1.0
2.5
243
1.0
2.1
287
1.0
2.3
259
1.0
2.0
304
1.0
2.2
275
1.0
1.7
344
1.0
2.0
328
formerly General Semiconductor
Notes:
(1) Pulse test: t
p
≤
50ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having V
WM
of 10 Volts and less, the I
D
limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
+ Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766
for both uni-directional and bi-directional devices
Document Number 88456
24-Jul-03
www.vishay.com
3
SMBG5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Peak Pulse Power Rating Curve
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
100
Fig. 2 – Pulse Derating Curve
P
PPM
— Peak Pulse Power (kW)
75
10
50
1
0.2 x 0.2" (0.5 x 0.5mm)
Copper Pad Areas
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
25
0
0
25
50
75
100
125
150
175
200
t
d
— Pulse Width (sec.)
T
A
— Ambient Temperature (°C)
Fig. 3 – Pulse Waveform
150
6,000
Fig. 4 – Typical Junction Capacitance
Measured at
Zero Bias
I
PPM
— Peak Pulse Current, % I
RSM
100
Peak Value
I
PPM
C
J
— Junction Capacitance (pF)
tr = 10µsec.
T
J
= 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
1,000
Half Value — IPP
2
I
PPM
50
10/1000µsec. Waveform
as defined by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
100
V
R
, Measured at
Stand-Off
Voltage, V
WM
Uni-Directional
Bi-Directional
T
J
= 25°C
f = 1.0MHz
Vsig = 50mVp-p
100
200
10
1
10
t — Time (ms)
V
WM
— Reverse Stand-Off Voltage (V)
Fig. 5 – Typical Transient Thermal
Impedance
I
FSM
— Peak Forward Surge Current (A)
100
200
Fig. 6 – Maximum Non-Repetitive Peak
Forward Surge Current
8.3ms Single Half Sine-Wave
(JEDEC Method)
Unidirectional Only
100
Transient Thermal Impedance (
°
C/W)
10
1.0
0.1
0.001
0.01
0.1
1
10
100
1000
10
1
10
100
t
p
— Pulse Duration (sec)
www.vishay.com
4
Number of Cycles at 60H
Z
Document Number 88456
24-Jul-03
国产芯片交流
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
