EEPROM, 512X8, Serial, CMOS, CDIP8, 0.300 INCH, CERDIP-8
参数名称 | 属性值 |
是否无铅 | 含铅 |
是否Rohs认证 | 不符合 |
零件包装代码 | DIP |
包装说明 | DIP, |
针数 | 8 |
Reach Compliance Code | unknow |
ECCN代码 | EAR99 |
最大时钟频率 (fCLK) | 0.1 MHz |
JESD-30 代码 | R-GDIP-T8 |
JESD-609代码 | e0 |
长度 | 9.8425 mm |
内存密度 | 4096 bi |
内存集成电路类型 | EEPROM |
内存宽度 | 8 |
功能数量 | 1 |
端子数量 | 8 |
字数 | 512 words |
字数代码 | 512 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 125 °C |
最低工作温度 | -40 °C |
组织 | 512X8 |
封装主体材料 | CERAMIC, GLASS-SEALED |
封装代码 | DIP |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
并行/串行 | SERIAL |
峰值回流温度(摄氏度) | NOT SPECIFIED |
认证状态 | Not Qualified |
座面最大高度 | 5.08 mm |
串行总线类型 | I2C |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | AUTOMOTIVE |
端子面层 | TIN LEAD |
端子形式 | THROUGH-HOLE |
端子节距 | 2.54 mm |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
宽度 | 7.62 mm |
最长写入周期时间 (tWC) | 1 ms |
Base Number Matches | 1 |
24C04AE/J | 24C01A-I/J | 24C04A/J | 24C04A-E/J | 24C01A-E/J | 24C04A-I/J | 24C02A-E/J | 24C02AE/J | 24C01A/J | |
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描述 | EEPROM, 512X8, Serial, CMOS, CDIP8, 0.300 INCH, CERDIP-8 | 128X8 I2C/2-WIRE SERIAL EEPROM, CDIP8, CERDIP-8 | EEPROM, 512X8, Serial, CMOS, CDIP8, 0.300 INCH, CERDIP-8 | 512X8 I2C/2-WIRE SERIAL EEPROM, CDIP8, CERDIP-8 | 128X8 I2C/2-WIRE SERIAL EEPROM, CDIP8, CERDIP-8 | EEPROM, 512X8, Serial, CMOS, CDIP8, CERDIP-8 | 256X8 I2C/2-WIRE SERIAL EEPROM, CDIP8, CERDIP-8 | 256X8 I2C/2-WIRE SERIAL EEPROM, CDIP8, 0.300 INCH, CERDIP-8 | 128X8 I2C/2-WIRE SERIAL EEPROM, CDIP8, 0.300 INCH, CERDIP-8 |
是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
零件包装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
包装说明 | DIP, | DIP, | DIP, | DIP, | DIP, | CERDIP-8 | CERDIP-8 | 0.300 INCH, CERDIP-8 | DIP, |
针数 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow | unknow | unknow | unknow |
最大时钟频率 (fCLK) | 0.1 MHz | 0.1 MHz | 0.1 MHz | 0.1 MHz | 0.1 MHz | 0.1 MHz | 0.1 MHz | 0.1 MHz | 0.1 MHz |
JESD-30 代码 | R-GDIP-T8 | R-GDIP-T8 | R-GDIP-T8 | R-GDIP-T8 | R-GDIP-T8 | R-GDIP-T8 | R-GDIP-T8 | R-GDIP-T8 | R-GDIP-T8 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
内存密度 | 4096 bi | 1024 bi | 4096 bi | 4096 bi | 1024 bi | 4096 bi | 2048 bi | 2048 bi | 1024 bi |
内存集成电路类型 | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM |
内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
字数 | 512 words | 128 words | 512 words | 512 words | 128 words | 512 words | 256 words | 256 words | 128 words |
字数代码 | 512 | 128 | 512 | 512 | 128 | 512 | 256 | 256 | 128 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 125 °C | 85 °C | 70 °C | 125 °C | 125 °C | 85 °C | 125 °C | 125 °C | 70 °C |
最低工作温度 | -40 °C | -40 °C | - | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | - |
组织 | 512X8 | 128X8 | 512X8 | 512X8 | 128X8 | 512X8 | 256X8 | 256X8 | 128X8 |
封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
封装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
并行/串行 | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
认证状态 | Not Qualified | COMMERCIAL | Not Qualified | COMMERCIAL | COMMERCIAL | Not Qualified | COMMERCIAL | COMMERCIAL | COMMERCIAL |
串行总线类型 | I2C | I2C | I2C | I2C | I2C | I2C | I2C | I2C | I2C |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | AUTOMOTIVE | INDUSTRIAL | COMMERCIAL | AUTOMOTIVE | AUTOMOTIVE | INDUSTRIAL | AUTOMOTIVE | AUTOMOTIVE | COMMERCIAL |
端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | Tin/Lead (Sn/Pb) | TIN LEAD | TIN LEAD | TIN LEAD |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
最长写入周期时间 (tWC) | 1 ms | 1 ms | 1 ms | 1 ms | 1 ms | 1 ms | 1 ms | 1 ms | 1 ms |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
其他特性 | - | 100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS | - | 10K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS | 10K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS | 100K ERASE/WRITE CYCLES MIN; HARDWARE WRITE PROTECT; DATA RETENTION > 40 YEARS | 10K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS | - | - |
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