Standard SRAM, 256KX4, 12ns, BICMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
参数名称 | 属性值 |
是否无铅 | 含铅 |
是否Rohs认证 | 不符合 |
厂商名称 | IDT (Integrated Device Technology) |
零件包装代码 | SOJ |
包装说明 | SOJ, |
针数 | 32 |
Reach Compliance Code | compliant |
ECCN代码 | 3A991.B.2.B |
最长访问时间 | 12 ns |
JESD-30 代码 | R-PDSO-J32 |
JESD-609代码 | e0 |
长度 | 20.96 mm |
内存密度 | 1048576 bit |
内存集成电路类型 | STANDARD SRAM |
内存宽度 | 4 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 32 |
字数 | 262144 words |
字数代码 | 256000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 256KX4 |
可输出 | YES |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | SOJ |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
并行/串行 | PARALLEL |
峰值回流温度(摄氏度) | 225 |
认证状态 | Not Qualified |
座面最大高度 | 3.683 mm |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | YES |
技术 | BICMOS |
温度等级 | COMMERCIAL |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | J BEND |
端子节距 | 1.27 mm |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | 30 |
宽度 | 10.16 mm |
IDT71B128S12Y8 | IDT71B128S15Y8 | IDT71B128S12P | IDT71B128S12Y | IDT71B128S10Y | IDT71B128S15P | IDT71B128S15Y | IDT71B128S10P | IDT71B128S10Y8 | |
---|---|---|---|---|---|---|---|---|---|
描述 | Standard SRAM, 256KX4, 12ns, BICMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 | Standard SRAM, 256KX4, 15ns, BICMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 | Standard SRAM, 256KX4, 12ns, BICMOS, PDIP32, 0.400 INCH, PLASTIC, DIP-32 | Standard SRAM, 256KX4, 12ns, BICMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 | Standard SRAM, 256KX4, 10ns, BICMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 | Standard SRAM, 256KX4, 15ns, BICMOS, PDIP32, 0.400 INCH, PLASTIC, DIP-32 | Standard SRAM, 256KX4, 15ns, BICMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 | Standard SRAM, 256KX4, 10ns, BICMOS, PDIP32, 0.400 INCH, PLASTIC, DIP-32 | Standard SRAM, 256KX4, 10ns, BICMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
零件包装代码 | SOJ | SOJ | DIP | SOJ | SOJ | DIP | SOJ | DIP | SOJ |
包装说明 | SOJ, | SOJ, | 0.400 INCH, PLASTIC, DIP-32 | 0.400 INCH, PLASTIC, SOJ-32 | 0.400 INCH, PLASTIC, SOJ-32 | 0.400 INCH, PLASTIC, DIP-32 | 0.400 INCH, PLASTIC, SOJ-32 | 0.400 INCH, PLASTIC, DIP-32 | SOJ, |
针数 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
Reach Compliance Code | compliant | compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | compliant |
ECCN代码 | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B |
最长访问时间 | 12 ns | 15 ns | 12 ns | 12 ns | 10 ns | 15 ns | 15 ns | 10 ns | 10 ns |
JESD-30 代码 | R-PDSO-J32 | R-PDSO-J32 | R-PDIP-T32 | R-PDSO-J32 | R-PDSO-J32 | R-PDIP-T32 | R-PDSO-J32 | R-PDIP-T32 | R-PDSO-J32 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
长度 | 20.96 mm | 20.96 mm | 41.021 mm | 20.96 mm | 20.96 mm | 41.021 mm | 20.96 mm | 41.021 mm | 20.96 mm |
内存密度 | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit |
内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
内存宽度 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
字数 | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words |
字数代码 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
组织 | 256KX4 | 256KX4 | 256KX4 | 256KX4 | 256KX4 | 256KX4 | 256KX4 | 256KX4 | 256KX4 |
可输出 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | SOJ | SOJ | DIP | SOJ | SOJ | DIP | SOJ | DIP | SOJ |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 3.683 mm | 3.683 mm | 5.08 mm | 3.683 mm | 3.683 mm | 5.08 mm | 3.683 mm | 5.08 mm | 3.683 mm |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | YES | YES | NO | YES | YES | NO | YES | NO | YES |
技术 | BICMOS | BICMOS | BICMOS | BICMOS | BICMOS | BICMOS | BICMOS | BICMOS | BICMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | J BEND | J BEND | THROUGH-HOLE | J BEND | J BEND | THROUGH-HOLE | J BEND | THROUGH-HOLE | J BEND |
端子节距 | 1.27 mm | 1.27 mm | 2.54 mm | 1.27 mm | 1.27 mm | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
宽度 | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm |
是否无铅 | 含铅 | 含铅 | 含铅 | - | - | 含铅 | - | 含铅 | 含铅 |
厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
峰值回流温度(摄氏度) | 225 | 225 | NOT SPECIFIED | - | - | NOT SPECIFIED | - | NOT SPECIFIED | 225 |
处于峰值回流温度下的最长时间 | 30 | 30 | NOT SPECIFIED | - | - | NOT SPECIFIED | - | NOT SPECIFIED | 30 |
I/O 类型 | - | - | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | - |
输出特性 | - | - | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | - |
封装等效代码 | - | - | DIP32,.4 | SOJ32,.44 | SOJ32,.44 | DIP32,.4 | SOJ32,.44 | DIP32,.4 | - |
电源 | - | - | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | - |
最大压摆率 | - | - | 0.155 mA | 0.155 mA | 0.165 mA | 0.15 mA | 0.15 mA | 0.165 mA | - |
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