SMAJ5.0 thru SMAJ188CA
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in Unidirectional and Bidirectional
• 400 W peak pulse power capability with a 10/1000 µs
waveform, repetitive rate (duty cycle): 0.01 % (300 W
above 78 V)
• Excellent clamping capability
DO-214AC (SMA)
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
MAJOR RATINGS AND CHARACTERISTICS
V
WM
P
PPM
I
FSM
T
j
max.
5.0 V to 188 V
400 W, 300 W
40 A
150 °C
DEVICES FOR BIDIRECTION APPLICATIONS
For bidirectional use C or CA suffix (e.g. SMAJ10C,
SMAJ10CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform
(1,2)
(see Fig. 1)
Peak pulse current with a waveform
(1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
(2)
Operating junction and storage temperature range
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2. Rating is 300 W above 78 V
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
SYMBOL
P
PPM
I
PPM
I
FSM
T
J
, T
STG
VALUE
400
see next table
40
- 55 to + 150
UNIT
W
A
A
°C
Document Number 88390
12-Sep-06
www.vishay.com
1
SMAJ5.0 thru SMAJ188CA
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE MARKING
CODE
UNI
SMAJ40A
SMAJ43
SMAJ43A
SMAJ45
SMAJ45A
SMAJ48
SMAJ48A
SMAJ51
SMAJ51A
SMAJ54
SMAJ54A
SMAJ58
SMAJ58A
SMAJ60
SMAJ60A
SMAJ64
SMAJ64A
SMAJ70
SMAJ70A
SMAJ75
SMAJ75A
SMAJ78
SMAJ78A
SMAJ85
SMAJ85A
SMAJ90
SMAJ90A
SMAJ100
SMAJ100A
SMAJ110
SMAJ110A
SMAJ120
SMAJ120A
SMAJ130
SMAJ130A
SMAJ150
SMAJ150A
SMAJ160
SMAJ160A
SMAJ170
SMAJ170A
SMAJ188
SMAJ188A
Note:
(1) Pulse test: t
p
≤
50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having V
WM
of 10 Volts and less, the I
D
limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bidirectional SMAJ5.0CA, the maximum V
(BR)
is 7.25 V
(6) V
F
= 3.5 V at I
F
= 25 A (uni-directional only)
Document Number 88390
12-Sep-06
www.vishay.com
3
CR
CS
CT
CU
CV
CW
CX
CY
CZ
RD
RE
RF
RG
RH
RK
RL
RM
RN
RP
RQ
RR
RS
RT
RU
RV
RW
RX
RY
RZ
VD
SE
SF
VG
SH
VK
SL
VM
SN
SP
SQ
SR
ST
SS
BI
YR
YS
YT
YU
YV
YW
YX
YY
YZ
ZD
ZE
ZF
ZG
ZH
ZK
ZL
ZM
ZN
ZP
ZQ
ZR
ZS
ZT
ZU
ZV
ZW
ZX
ZY
ZZ
VD
VE
VF
VG
VH
VK
VL
VM
VN
VP
VQ
VR
VT
VS
BREAKDOWN
VOLTAGE
V
(BR)
AT I
T (1)
(V)
MIN
44.4
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
209
209
MAX
49.1
58.4
52.8
61.1
55.3
65.1
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86.0
102
92.1
106
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
209
255
231
TEST
CURRENT
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
188
188
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(µA)
(3)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK PULSE
SURGE
CURRENT
I
PPM
(A)
(2)
6.2
5.2
5.8
5.0
5.5
4.7
5.2
4.4
4.9
4.2
4.6
3.9
4.3
3.7
4.1
3.5
3.9
3.2
3.5
3.0
3.3
2.9
3.2
2.0
2.2
1.9
2.1
1.7
1.9
1.5
1.7
1.4
1.6
1.3
1.4
1.1
1.2
1.0
1.2
0.99
1.09
0.90
0.91
MAXIMUM
CLAMPING
VOLTAGE AT
I
PPM
V
C
(V)
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
268
243
287
259
304
275
344
328
DEVICE TYPE
SMAJ5.0 thru SMAJ188CA
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
(1)
Typical thermal resistance, junction to lead
Note:
(1) Mounted on minimum recommended pad layout
SYMBOL
R
θJA
R
θJL
VALUE
120
30
UNIT
°C/W
°C/W
ORDERING INFORMATION
PREFERRED P/N
SMAJ5.0A-E3/61
SMAJ5.0A-E3/5A
UNIT WEIGHT (g)
0.064
0.064
PREFERRED PACKAGE CODE
61
5A
BASE QUANTITY
1800
7500
DELIVERY MODE
7" Diameter Plastic Tape & Reel
13" Diameter Plastic Tape & Reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
°C
unless otherwise noted)
100
150
Non-repetitive
Pulse
Waveform
shown in Fig. 3
T
A
= 25 °C
10
T
j
= 25 °C
Pulse
Width
(td)
is defined as the point
where
the peak current
decays to 50
%
of I
PPM
I
PPM
- Peak Pulse Current,
%
I
RSM
tr = 10
µsec
Peak
Value
I
PPM
P
PPM
, Peak Pulse Power (kW)
100
SMAJ85 --
SMAJ188
1
SMAJ5.0--
SMAJ78
Half
Value
- I
PP
2
I
PPM
50
10/1000
µsec Waveform
as defined
by
R.E.A.
0.2 x 0.2" (0.5 x 0.5 mm)
Copper Pad Areas
0.1
0.1
µs
1.0
µs
10
µs
100
µs
1.0 ms
10 ms
td
0
0
1.0
2.0
3.0
4.0
td - Pulse
Width
(s)
t - Time (ms)
Figure 1. Peak Pulse Power Rating Curve
Figure 3. Pulse Waveform
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage,
%
100
10000
75
C
J
, Junction Capacitance (pF)
1000
T
j
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Measured at
Stand-off
Voltage V
WM
Uni-Directional
50
100
25
Bi-Directional
0
0
25
50
75
100
125
150
175
200
10
1
10
100
200
T
J
- Initial Temperature (°C)
V
WM
- Reverse Stand-off
Voltage
(V)
Figure 2. Pulse Power or Current versus Initial Junction Temperature
Figure 4. Typical Junction Capacitance
www.vishay.com
4
Document Number 88390
12-Sep-06
NXP MCU
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