Page Mode DRAM, 256KX1, 150ns, MOS, PDIP16
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | FUJITSU(富士通) |
零件包装代码 | DIP |
包装说明 | DIP, DIP16,.3 |
针数 | 16 |
Reach Compliance Code | unknown |
最长访问时间 | 150 ns |
I/O 类型 | SEPARATE |
JESD-30 代码 | R-PDIP-T16 |
JESD-609代码 | e0 |
内存密度 | 262144 bit |
内存集成电路类型 | PAGE MODE DRAM |
内存宽度 | 1 |
端子数量 | 16 |
字数 | 262144 words |
字数代码 | 256000 |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 256KX1 |
输出特性 | 3-STATE |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | DIP |
封装等效代码 | DIP16,.3 |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
电源 | 5 V |
认证状态 | Not Qualified |
刷新周期 | 256 |
最大压摆率 | 0.057 mA |
标称供电电压 (Vsup) | 5 V |
表面贴装 | NO |
技术 | MOS |
温度等级 | COMMERCIAL |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE |
端子节距 | 2.54 mm |
端子位置 | DUAL |
MB81256-15P | MB81256-12P | MB81256-12PV | MB81256-12PSZ | MB81256-12TV | MB81256-10TV | MB81256-10PSZ | MB81256-10PV | MB81256-10P | MB81256-12Z | |
---|---|---|---|---|---|---|---|---|---|---|
描述 | Page Mode DRAM, 256KX1, 150ns, MOS, PDIP16 | Page Mode DRAM, 256KX1, 120ns, MOS, PDIP16 | Page Mode DRAM, 256KX1, 120ns, MOS, PQCC18 | Page Mode DRAM, 256KX1, 120ns, MOS, PZIP16 | Page Mode DRAM, 256KX1, 120ns, MOS, CQCC18 | Page Mode DRAM, 256KX1, 100ns, MOS, CQCC18 | Page Mode DRAM, 256KX1, 100ns, MOS, PZIP16 | Page Mode DRAM, 256KX1, 100ns, MOS, PQCC18 | Page Mode DRAM, 256KX1, 100ns, MOS, PDIP16 | Page Mode DRAM, 256KX1, 120ns, MOS, CDIP16 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
厂商名称 | FUJITSU(富士通) | FUJITSU(富士通) | FUJITSU(富士通) | FUJITSU(富士通) | FUJITSU(富士通) | FUJITSU(富士通) | FUJITSU(富士通) | FUJITSU(富士通) | FUJITSU(富士通) | FUJITSU(富士通) |
零件包装代码 | DIP | DIP | LCC | ZIP | LCC | LCC | ZIP | LCC | DIP | DIP |
包装说明 | DIP, DIP16,.3 | DIP, DIP16,.3 | QCCJ, LDCC18,.33X.53 | ZIP, ZIP16,.1 | QCCN, LCC18,.3X.5 | QCCN, LCC18,.3X.5 | ZIP, ZIP16,.1 | QCCJ, LDCC18,.33X.53 | DIP, DIP16,.3 | DIP, DIP16,.3 |
针数 | 16 | 16 | 18 | 16 | 18 | 18 | 16 | 18 | 16 | 16 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
最长访问时间 | 150 ns | 120 ns | 120 ns | 120 ns | 120 ns | 100 ns | 100 ns | 100 ns | 100 ns | 120 ns |
I/O 类型 | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE |
JESD-30 代码 | R-PDIP-T16 | R-PDIP-T16 | R-PQCC-J18 | R-PZIP-T16 | R-XQCC-N18 | R-XQCC-N18 | R-PZIP-T16 | R-PQCC-J18 | R-PDIP-T16 | R-XDIP-T16 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
内存密度 | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit |
内存集成电路类型 | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM |
内存宽度 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 16 | 16 | 18 | 16 | 18 | 18 | 16 | 18 | 16 | 16 |
字数 | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words |
字数代码 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
组织 | 256KX1 | 256KX1 | 256KX1 | 256KX1 | 256KX1 | 256KX1 | 256KX1 | 256KX1 | 256KX1 | 256KX1 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC | CERAMIC | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC |
封装代码 | DIP | DIP | QCCJ | ZIP | QCCN | QCCN | ZIP | QCCJ | DIP | DIP |
封装等效代码 | DIP16,.3 | DIP16,.3 | LDCC18,.33X.53 | ZIP16,.1 | LCC18,.3X.5 | LCC18,.3X.5 | ZIP16,.1 | LDCC18,.33X.53 | DIP16,.3 | DIP16,.3 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | IN-LINE | CHIP CARRIER | IN-LINE | CHIP CARRIER | CHIP CARRIER | IN-LINE | CHIP CARRIER | IN-LINE | IN-LINE |
电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
刷新周期 | 256 | 256 | 256 | 256 | 256 | 256 | 256 | 256 | 256 | 256 |
最大压摆率 | 0.057 mA | 0.065 mA | 0.065 mA | 0.065 mA | 0.065 mA | 0.07 mA | 0.07 mA | 0.07 mA | 0.07 mA | 0.065 mA |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | NO | NO | YES | NO | YES | YES | NO | YES | NO | NO |
技术 | MOS | MOS | MOS | MOS | MOS | MOS | MOS | MOS | MOS | MOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | J BEND | THROUGH-HOLE | NO LEAD | NO LEAD | THROUGH-HOLE | J BEND | THROUGH-HOLE | THROUGH-HOLE |
端子节距 | 2.54 mm | 2.54 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 2.54 mm | 2.54 mm |
端子位置 | DUAL | DUAL | QUAD | ZIG-ZAG | QUAD | QUAD | ZIG-ZAG | QUAD | DUAL | DUAL |
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