Datasheet> 器件分类 > 分立半导体> 晶体管> MRF338

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MRF338: 产品描述RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6; 产品类别分立半导体晶体管; 文件大小14KB，共1页; 制造商Advanced Semiconductor, Inc.

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MRF338概述

RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6

MRF338规格参数

参数名称	属性值
厂商名称	Advanced Semiconductor, Inc.
包装说明	FLANGE MOUNT, O-CRFM-F6
针数	6
Reach Compliance Code	unknown
ECCN代码	EAR99
最大集电极电流 (IC)	12 A
基于收集器的最大容量	125 pF
集电极-发射极最大电压	30 V
配置	Single
最小直流电流增益 (hFE)	20
最高频带	ULTRA HIGH FREQUENCY BAND
JESD-30 代码	O-CRFM-F6
端子数量	6
最高工作温度	200 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	ROUND
封装形式	FLANGE MOUNT
极性/信道类型	NPN
最大功率耗散 (Abs)	250 W
认证状态	Not Qualified
表面贴装	NO
端子形式	FLAT
端子位置	RADIAL
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON

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MRF338

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

ASI MRF338

is Designed for

High Power Amplifiers in 400 to 512

MHz Military Communication

Equipment.

PACKAGE STYLE .500 6L FLG

2x ØN

FU LL R

FEATURES:

•

= 8.8 dB Typical at 470 MHz

•

Internal Input Matching Network

•

Omnigold™

Metalization System

.725/18,42

MAXIMUM RATINGS

CBO

CEO

EBO

DISS

STG

12 A

60 V

30 V

4.0 V

250 W @ T

= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

0.7 °C/W

D IM

M IN IM U M

inche s / m m

M AX IM U M

inche s / m m

.150 / 3.43

.045 / 1.14

.210 / 5.33

.835 / 21.21

.200 / 5.08

.490 / 12.45

.003 / 0.08

.125 / 3.18

.725 / 18.42

.970 / 24.64

.090 / 2.29

.150 / 3.81

.120 / 3.05

.160 / 4.06

.220 / 5.59

.865 / 21.97

.210 / 5.33

.510 / 12.95

.007 / 0.18

.980 / 24.89

.105 / 2.67

.170 / 4.32

.285 / 7.24

.135 / 3.43

CHARACTERISTICS

SYMBOL

CBO

CEO

EBO

CBO

= 50 mA

= 8.0 mA

= 30 V

= 5.0 V

= 28 V

= 25 C

NONETEST

CONDITIONS

= 100 mA

MINIMUM TYPICAL MAXIMUM

4.0

5.0

UNITS

---

= 4.0 A

f = 1.0 MHz

OUT

= 80 W

f = 470 MHz

7.3

8.8

125

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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