AP2324GN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Capable of 2.5V Gate Drive
▼
Lower Gate Charge
▼
Surface Mount Package
▼
RoHS Compliant & Halogen-Free
SOT-23
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
S
G
20V
25mΩ
6A
D
Description
AP2324 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The special design SOT-23 package with good thermal
performance is widely preferred for all commercial-industrial surface
mount applications using infrared reflow technique and suited for
voltage conversion or switch applications.
G
S
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
3
, V
GS
@ 4.5V
Drain Current , V
GS
@ 4.5V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
20
+12
6
4.8
24
1.38
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
90
Unit
℃/W
1
201501213
Data and specifications subject to change without notice
AP2324GN-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=2.5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=5A
V
DS
=20V, V
GS
=0V
V
GS
= +12V, V
DS
=0V
I
D
=5A
V
DS
=10V
V
GS
=4.5V
V
DS
=10V
I
D
=1A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=20V
f=1.0MHz
f=1.0MHz
Min.
20
-
-
0.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
15
-
-
9
1.2
3.5
8
11
20
6
600
125
115
1.7
Max. Units
-
25
39
1.2
-
1
+100
14.4
-
-
-
-
-
-
960
-
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=1.2A, V
GS
=0V
I
S
=5A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
22
10
Max. Units
1.2
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t < 10s ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2324GN-HF
30
20
T
A
=25 C
I
D
, Drain Current (A)
o
20
I
D
, Drain Current (A)
5.0V
4.5V
3.5V
2.5V
T
A
=150 C
16
o
5.0V
4.5V
3.5V
2.5V
V
G
=2.0V
12
V
G
=2.0V
8
10
4
0
0
1
2
3
4
0
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
35
1.8
I
D
=2.5A
T
A
=25
o
C
31
1.6
I
D
=5A
V
G
=4.5V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
1.4
27
1.2
23
1.0
19
0.8
15
0
1
2
3
4
5
6
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
8
1.4
6
I
S
(A)
T
j
=150
o
C
4
T
j
=25
o
C
Normalized V
GS(th)
1.2
1
0.8
0.6
2
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
0.2
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2324GN-HF
8
1000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
I
D
=5A
800
6
4
C (pF)
V
DS
=10V
V
DS
=12V
V
DS
=16V
600
C
iss
400
2
200
C
oss
C
rss
0
0
2
4
6
8
10
12
14
16
0
1
5
9
13
17
21
25
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
Operation in this
area limited by
R
DS(ON)
Normalized Thermal Response (R
thja
)
DUTY=0.5
0.2
100us
0.1
0.1
0.05
I
D
(A)
1
1ms
10ms
0.02
0.01
P
DM
t
T
0.01
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja = 270℃/W
0.1
T
A
=25
o
C
Single Pulse
0.01
0.01
0.1
1
10
100ms
1s
DC
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP2324GN-HF
MARKING INFORMATION
Part Number : M4
M4SS
Date Code : SS
SS:2004,2008,2012,2016,2020...
SS:2003,2007,2011,2015,2019...
SS:2002,2006,2010,2014,2018...
SS:2001,2005,2009,2013,2017...
5
Microchip MCU
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