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TND323VD

产品描述Excellent Power Device
文件大小1MB,共7页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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TND323VD概述

Excellent Power Device

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TND323VD
Excellent Power Device
Inverter and buffer driver for general purpose
Features
www.onsemi.com
Inverter buffer
Monolithic structure (High voltage CMOS process adopted)
Withstand voltage of 25V is assured
Wide range of operating voltage : 4.5V to 25V
Peak output current : IO+/IO– =0.8A /1A
Fast switching time (30ns typical at 1000pF load)
Fully compatible input to TTL / CMOS (VIH=up to 2.6V, at VDD=4.5 to 25V)
Built-in input pull-down resistance
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Supply Voltage
Input Voltage
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDD
VIN
PD max
Tj
Tstg
Conditions
Ratings
0 to 25
GND-
-0.3 to VDD+0.3
0.2
--55 to +150
--55 to +150
Unit
V
V
W
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Packing Type : TL
Pin Assignment
8
7
6
5
TND323VD-TL-E
TND323VD-TL-H
1 : INA
2 : OUTA
3 : OUTB
4 : INB
5 : GND
6 : VDD
7 : VDD
8 : VDD
TL
Marking
1
2
3
4
Top View
DE
LOT No.
SOT-28FL / VEC8
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of this data sheet.
©Semiconductor Components Industries, LLC, 2015
March 2015 - Rev. 2
1
Publication Order Number:
TND323VD/D

TND323VD相似产品对比

TND323VD TND323VD-TL-E
描述 Excellent Power Device Excellent Power Device

 
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