2N3715 & 2N3716
NPN High Power Silicon Transistor
Rev. V2
Features
•
Available in JAN, JANTX, JANTXV per MIL-PRF-
19500/408
•
TO-3 (TO-204AA) Package
Electrical Characteristics
Parameter
Off Characteristics
Collector
-
Emitter Breakdown Voltage
Collector
-
Base Cutoff Current
Emitter
-
Base Cutoff Current
Collector
-
Emitter Cutoff Current
Collector
-
Emitter Cutoff Current
On Characteristics
1
Forward Current Transfer Ratio
I
C
= 1 Adc, V
CE
= 2 Vdc
I
C
= 3 Adc, V
CE
= 2 Vdc
I
C
= 5 Adc, V
CE
= 2 Vdc
I
C
= 10 Adc, V
CE
= 4 Vdc
I
C
= 5 Adc, I
B
= 0.5 Adc
I
C
= 10 Adc, I
B
= 2.0 Adc
I
C
= 5 Adc, I
B
= 0.5 Vdc
I
C
= 10 Adc, I
B
= 2.0 Vdc
H
FE
-
50
30
10
5
—
—
150
120
—
—
1.0
2.5
1.5
3.0
I
C
= 10 mAdc, 2N3715
I
C
= 10 mAdc, 2N3716
V
CE
= 60 Vdc, 2N3715
V
CE
= 80 Vdc, 2N3716
V
EB
= 7 Vdc
V
CE
= 60 Vdc, V
BE
= 1.5 Vdc, 2N3715
V
CE
= 80 Vdc, V
BE
= 1.5 Vdc, 2N3716
V
CE
= 50 Vdc, 2N3715
V
CE
= 70 Vdc, 2N3716
V
(BR)CEO
Vdc
I
CEO
I
EBO
I
CEX
I
CEO
µAdc
mAdc
µAdc
µAdc
60
80
—
—
—
—
—
10
10
1
10
10
10
10
Test Conditions
Symbol Units
Min.
Max.
Collector
-
Emitter Saturation Voltage
Emitter
-
Base Saturation Voltage
Dynamic Characteristics
Magnitude of Common Emitter Small-Signal
Short-Circuit Forward Current Transfer Ratio
Small-Signal Short-Circuit
Forward Current Transfer Ratio
Output Capacitance
Safe Operating Area
DC Tests:
Test 1:
Test 2:
Test 3:
V
CE(SAT)
V
BE(SAT)
Vdc
Vdc
I
C
= 4 Adc, V
CE
= 4 Vdc, f = 100 kHz
I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1 kHz
V
CB
= 10 Vdc, I
E
= 0, 100 kHz ≤ f ≤ 1 MHz
| H
FE
|
H
FE
C
OBO
pF
4
30
—
20
300
500
T
C
= +25 °C, I Cycle, t = 1.0 s
V
CE
= 15 Vdc, I
C
= 10 Adc
V
CE
= 40 Vdc, I
C
= 3.75 Adc
V
CE
= 55 Vdc, I
C
= 0.9 Adc, 2N3715
V
CE
= 65 Vdc, I
C
= 0.9 Adc, 2N3716
1. Pulse Test: Pulse Width = 300
μs,
Duty Cycle ≤2.0%.
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
www.vptcomponents.com
2N3715 & 2N3716
NPN High Power Silicon Transistor
Rev. V2
Absolute Maximum Ratings
Ratings
Collector
-
Emitter Voltage
2N3715
2N3716
Collector
-
Base Voltage
2N3715
2N3716
Emitter
-
Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ T
A
= 25°C
2
@ T
A
= 25°C
Operating & Storage Temperature Range
2. Derate linearly @ 28.57 mW / °C for T
A
= 25 °C
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
OP
, T
STG
Value
60 Vdc
80 Vdc
80 Vdc
100 Vdc
7 Vdc
4 Vdc
10 Adc
5W
117 W
-65°C
to +200°C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max. Value
1.5°C/W
Outline Drawing
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
www.vptcomponents.com
2N3715 & 2N3716
NPN High Power Silicon Transistor
Rev. V2
VPT Components All rights reserved.
Information in this document is provided in connection with VPT Components’ products. These materials are
provided by VPT Components as a service to its customers and may be used for informational purposes only.
Except as provided in VPT Components’ Terms and Conditions of Sale for such products or in any separate
agreement related to this document, VPT Components assumes no liability whatsoever. VPT Components as-
sumes no responsibility for errors or omissions in these materials. VPT Components may make changes to
specifications and product descriptions at any time, without notice. VPT Components makes no commitment to
update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from
future changes to its specifications and product descriptions. No license, express or implied, by estoppels or oth-
erwise, to any intellectual property rights is granted by this document.
THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR
IMPLIED, RELATING TO SALE AND/OR USE OF VPT COMPONENTS’ PRODUCTS INCLUDING LIABILITY
OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR
INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR
OTHER INTELLECTUAL PROPERTY RIGHT. VPT COMPONENTS FURTHER DOES NOT WARRANT THE
ACCURACY OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CON-
TAINED WITHIN THESE MATERIALS. VPT COMPONENTS SHALL NOT BE LIABLE FOR ANY SPECIAL, IN-
DIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVE-
NUES OR LOST PROFITS, WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
VPT Components’ products are not intended for use in medical, lifesaving or life sustaining applications. VPT
Components’ customers using or selling VPT Components products for use in such applications do so at their
own risk and agree to fully indemnify VPT Components for any damages resulting from such improper use or
sale.
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
www.vptcomponents.com
电子竞赛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
