2N3715 & 2N3716
NPN High Power Silicon Transistor
Rev. V2
Features
•
Available in JAN, JANTX, JANTXV per MIL-PRF-
19500/408
•
TO-3 (TO-204AA) Package
Electrical Characteristics
Parameter
Off Characteristics
Collector
-
Emitter Breakdown Voltage
Collector
-
Base Cutoff Current
Emitter
-
Base Cutoff Current
Collector
-
Emitter Cutoff Current
Collector
-
Emitter Cutoff Current
On Characteristics
1
Forward Current Transfer Ratio
I
C
= 1 Adc, V
CE
= 2 Vdc
I
C
= 3 Adc, V
CE
= 2 Vdc
I
C
= 5 Adc, V
CE
= 2 Vdc
I
C
= 10 Adc, V
CE
= 4 Vdc
I
C
= 5 Adc, I
B
= 0.5 Adc
I
C
= 10 Adc, I
B
= 2.0 Adc
I
C
= 5 Adc, I
B
= 0.5 Vdc
I
C
= 10 Adc, I
B
= 2.0 Vdc
H
FE
-
50
30
10
5
—
—
150
120
—
—
1.0
2.5
1.5
3.0
I
C
= 10 mAdc, 2N3715
I
C
= 10 mAdc, 2N3716
V
CE
= 60 Vdc, 2N3715
V
CE
= 80 Vdc, 2N3716
V
EB
= 7 Vdc
V
CE
= 60 Vdc, V
BE
= 1.5 Vdc, 2N3715
V
CE
= 80 Vdc, V
BE
= 1.5 Vdc, 2N3716
V
CE
= 50 Vdc, 2N3715
V
CE
= 70 Vdc, 2N3716
V
(BR)CEO
Vdc
I
CEO
I
EBO
I
CEX
I
CEO
µAdc
mAdc
µAdc
µAdc
60
80
—
—
—
—
—
10
10
1
10
10
10
10
Test Conditions
Symbol Units
Min.
Max.
Collector
-
Emitter Saturation Voltage
Emitter
-
Base Saturation Voltage
Dynamic Characteristics
Magnitude of Common Emitter Small-Signal
Short-Circuit Forward Current Transfer Ratio
Small-Signal Short-Circuit
Forward Current Transfer Ratio
Output Capacitance
Safe Operating Area
DC Tests:
Test 1:
Test 2:
Test 3:
V
CE(SAT)
V
BE(SAT)
Vdc
Vdc
I
C
= 4 Adc, V
CE
= 4 Vdc, f = 100 kHz
I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1 kHz
V
CB
= 10 Vdc, I
E
= 0, 100 kHz ≤ f ≤ 1 MHz
| H
FE
|
H
FE
C
OBO
pF
4
30
—
20
300
500
T
C
= +25 °C, I Cycle, t = 1.0 s
V
CE
= 15 Vdc, I
C
= 10 Adc
V
CE
= 40 Vdc, I
C
= 3.75 Adc
V
CE
= 55 Vdc, I
C
= 0.9 Adc, 2N3715
V
CE
= 65 Vdc, I
C
= 0.9 Adc, 2N3716
1. Pulse Test: Pulse Width = 300
μs,
Duty Cycle ≤2.0%.
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
www.vptcomponents.com
2N3715 & 2N3716
NPN High Power Silicon Transistor
Rev. V2
Absolute Maximum Ratings
Ratings
Collector
-
Emitter Voltage
2N3715
2N3716
Collector
-
Base Voltage
2N3715
2N3716
Emitter
-
Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ T
A
= 25°C
2
@ T
A
= 25°C
Operating & Storage Temperature Range
2. Derate linearly @ 28.57 mW / °C for T
A
= 25 °C
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
OP
, T
STG
Value
60 Vdc
80 Vdc
80 Vdc
100 Vdc
7 Vdc
4 Vdc
10 Adc
5W
117 W
-65°C
to +200°C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max. Value
1.5°C/W
Outline Drawing
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
www.vptcomponents.com
2N3715 & 2N3716
NPN High Power Silicon Transistor
Rev. V2
VPT Components All rights reserved.
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3
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Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
www.vptcomponents.com
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