BZT03D...
Silicon Z–Diodes and Transient Voltage Suppressors
Features
D
Glass passivated junction
D
Hermetically sealed package
D
Clamping time in picoseconds
Applications
Medium power voltage regulators and medium power
transient suppression circuits
94 9539
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Power dissipation
Repetitive peak reverse power
dissipation
Non repetitive peak surge power
dissipation
Junction temperature
Storage temperature range
Test Conditions
l=10mm, T
L
=25
°
C
T
amb
=25
°
C
Type
Symbol
P
V
P
V
P
ZRM
P
ZSM
T
j
T
stg
Value
3.25
1.3
10
600
175
–65...+175
Unit
W
W
W
W
t
p
=100
m
s, T
j
=25
°
C
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Junction ambient
Test Conditions
l=10mm, T
L
=constant
on PC board with spacing 25mm
Symbol
R
thJA
R
thJA
Value
46
100
Unit
K/W
K/W
Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=0.5A
Type
Symbol
V
F
Min
Typ
Max
1.2
Unit
V
TELEFUNKEN Semiconductors
Rev. A1, 12-Dec-94
1 (6)
BZT03D...
Characteristics when used as voltage regulator diodes, T
j
= 25°C
Type
BZT03D...
BZT03D
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
220
Min.
5.6
6.1
6.75
7.4
8.2
9.0
9.9
10.8
11.7
13.5
14.4
16.2
18.0
29.8
21.6
24.3
27
29.7
32.4
35.1
38.7
42.3
45.9
50.4
55.8
61.2
67.5
73.8
81.9
90
99
108
117
135
144
162
180
198
V
Z
V
Typ.
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
220
r
zj
Max.
6.8
7.5
8.25
9.0
10.0
11.0
12.1
13.2
14.3
16.5
17.6
19.8
22.0
24.2
26.4
29.7
33
36.3
39.6
42.9
47.3
51.7
56.1
61.6
68.2
74.8
82.5
90.2
100
110
121
132
143
165
176
198
220
242
Typ.
1
1
1
1
2
2
4
4
5
5
6
6
6
6
7
7
8
8
21
21
24
24
25
25
25
25
30
30
60
60
80
80
110
130
150
180
200
350
W
and
Max.
2
2
2
2
4
4
7
7
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
100
200
200
250
250
300
300
350
400
500
750
TK
UZ
at
%/K
Min. Max.
0
0.07
0
0.07
0
0.07
0.03
0.08
0.03
0.08
0.05
0.09
0.05
0.10
0.05
0.10
0.05
0.10
0.05
0.10
0.06
0.11
0.06
0.11
0.06
0.11
0.06
0.11
0.06
0.11
0.06
0.11
0.06
0.11
0.06
0.11
0.06
0.11
0.06
0.11
0.07
0.12
0.07
0.12
0.07
0.12
0.07
0.12
0.08
0.13
0.08
0.13
0.08
0.13
0.08
0.13
0.09
0.13
0.09
0.13
0.09
0.13
0.09
0.13
0.09
0.13
0.09
0.13
0.09
0.13
0.09
0.13
0.09
0.13
0.09
0.13
I
Z
mA
100
100
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
2
I
R
at V
R
m
A
Max.
1500
4.4
1000
4.8
750
5.3
600
5.9
20
6.5
10
7.1
4
7.9
3
8.6
2
9.3
1
10.6
1
11.6
1
12.6
1
14.4
1
15.8
1
17.2
1
19.4
1
21.5
1
23.5
1
25.8
1
28
1
31
1
33.5
1
36.5
1
40
1
44.5
1
49
1
54
1
59
1
65
1
71
1
79
1
86
1
93
1
106
1
116
1
126
1
144
1
158
2 (6)
TELEFUNKEN Semiconductors
Rev. A1, 12-Dec-94
BZT03D...
Type
BZT03D...
BZT03D
240
270
Min.
216
243
V
Z
V
Typ.
240
270
r
zj
Max.
264
297
Typ.
400
450
W
and
Max.
850
1000
TK
UZ
at I
Z
%/K
mA
Min. Max.
0.09
0.13
2
0.09
0.13
2
I
R
at V
R
m
A
Max.
1
172
1
194
Characteristics when used as transient suppressor diodes, T
j
= 25°C
Type
BZT03D...
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
TELEFUNKEN Semiconductors
Rev. A1, 12-Dec-94
Clamping
V
(CL)R 1)
at
V
Max.
9.5
10.5
11.6
12.6
13.7
15.2
16.2
17.5
19.1
21.8
23.4
26.3
29.2
31.9
34.6
39
43.5
47.5
51.5
56
62
67.5
73
81
89
97
107
117
130
143
157
172
I
RSM
A
34.0
31.0
26.5
24.4
22.7
20.3
19.1
17.7
15.9
14.4
13.1
11.7
10.6
9.7
8.9
7.9
7.1
6.5
6.0
5.5
4.9
4.6
4.2
3.8
3.5
3.2
2.9
2.6
2.4
2.2
2.0
1.8
I
R
m
A
Max.
3000
2000
1500
1200
50
20
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Stand-off
at
V
R 2)
V
4.8
5.3
5.9
6.5
7.1
7.9
8.6
9.3
10.6
11.6
12.6
14.4
15.8
17.2
19.4
21.5
23.5
25.8
28
31
33.5
36.5
40
44.5
49
54
59
65
71
79
86
93
3 (6)
BZT03D...
Type
BZT03D...
130
150
160
180
200
220
240
270
1)
10/1000
Clamping
V
(CL)R 1)
at
V
Max.
187
213
229
256
284
314
364
388
I
RSM
A
1.6
1.5
1.3
1.2
1.1
1.0
0.9
0.8
2)
Stand-off
I
R
m
A
Max.
5
5
5
5
5
5
5
5
Stand-off
at
V
R 2)
V
106
116
126
144
158
172
194
215
exp. falling pulse t
p
= 1000
m
s down to 50%
voltage = recommended supply voltage
Typical Characteristics
(T
j
= 25
_
C unless otherwise specified)
50
3
P
tot
– Total Power Dissipation ( W )
4
l=10mm
3
15mm
2
20mm
1
see Fig.1
0
7
2
94 9086a
94 9584
l
l
T
L
=constant
25
50
0
40
80
120
160
200
T
amb
– Ambient Temperature (
°C
)
Figure 1. Epoxy glass hard tissue, board thickness 1.5 mm,
R
thJA
100 K/W
x
Figure 2. Total Power Dissipation vs. Ambient Temperature
4 (6)
TELEFUNKEN Semiconductors
Rev. A1, 12-Dec-94
BZT03D...
3.0
I
F
– Forward Current ( A )
2.5
2.0
T
j
= 25°C
1.5
1.0
0.5
0
0
94 9585
10000
P
ZSM
– Non-Repetitive Surge Power
Dissipation ( W )
T
j
= 25°C
1000
100
0.5
1.0
1.5
2.0
94 9586
10
0.01
0.1
1
10
100
V
F
– Forward Voltage ( V )
t
p
– Pulse Length ( ms )
Figure 3. Forward Current vs. Forward Voltage
Figure 4. Non Repetitive Surge Power Dissipation vs. Pulse
Length
Dimensions in mm
Sintered Glass Case
SOD 57
Weight max. 0.5 g
Cathode Identification
94 9538
∅
3.6 max.
technical drawings
according to DIN
specifications
∅
0.82 max.
26 min.
4.2 max.
26 min.
TELEFUNKEN Semiconductors
Rev. A1, 12-Dec-94
5 (6)
51单片机
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