3.5A, 100V, 0.69ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC4-18
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | SEMELAB |
| 包装说明 | CHIP CARRIER, R-CQCC-N15 |
| 针数 | 18 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 雪崩能效等级（Eas） | 115 mJ |
| 外壳连接 | SOURCE |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V |
| 最大漏极电流 (ID) | 3.5 A |
| 最大漏源导通电阻 | 0.69 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-CQCC-N15 |
| JESD-609代码 | e4 |
| 元件数量 | 1 |
| 端子数量 | 15 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR |
| 封装形式 | CHIP CARRIER |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | P-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 14 A |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | GOLD |
| 端子形式 | NO LEAD |
| 端子位置 | QUAD |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管元件材料 | SILICON |
| IRFE9120-JQR-BE4 | RVZ-10V471GA5Y1UQ-R2 | 2N6845LCC4E4 | IRFE9120 | IRFE9120E4 | IRFE9120-JQR-B | |
|---|---|---|---|---|---|---|
| 描述 | 3.5A, 100V, 0.69ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC4-18 | FOR AUTOMOTIVE VERTICAL CHIP TYPE ALUMINUM ELECTROLYTIC CAPACITORS[RVZ] | 3.5A, 100V, 0.69ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC4-18 | 3.5A, 100V, 0.69ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC4-18 | 3.5A, 100V, 0.69ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC4-18 | 3.5A, 100V, 0.69ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, LCC4-18 |
| 是否无铅 | 不含铅 | - | 不含铅 | 含铅 | 不含铅 | 含铅 |
| 是否Rohs认证 | 符合 | - | 符合 | 符合 | 符合 | 不符合 |
| 厂商名称 | SEMELAB | - | - | SEMELAB | SEMELAB | SEMELAB |
| 包装说明 | CHIP CARRIER, R-CQCC-N15 | - | CHIP CARRIER, R-CQCC-N15 | CHIP CARRIER, R-CQCC-N15 | CHIP CARRIER, R-CQCC-N15 | CHIP CARRIER, R-CQCC-N15 |
| 针数 | 18 | - | 18 | 18 | 18 | 18 |
| Reach Compliance Code | compliant | - | compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | 115 mJ | - | 115 mJ | 115 mJ | 115 mJ | 115 mJ |
| 外壳连接 | SOURCE | - | SOURCE | SOURCE | SOURCE | SOURCE |
| 配置 | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V | - | 100 V | 100 V | 100 V | 100 V |
| 最大漏极电流 (ID) | 3.5 A | - | 3.5 A | 3.5 A | 3.5 A | 3.5 A |
| 最大漏源导通电阻 | 0.69 Ω | - | 0.69 Ω | 0.69 Ω | 0.69 Ω | 0.69 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-CQCC-N15 | - | R-CQCC-N15 | R-CQCC-N15 | R-CQCC-N15 | R-CQCC-N15 |
| 元件数量 | 1 | - | 1 | 1 | 1 | 1 |
| 端子数量 | 15 | - | 15 | 15 | 15 | 15 |
| 工作模式 | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | - | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | - | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | CHIP CARRIER | - | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | P-CHANNEL | - | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 14 A | - | 14 A | 14 A | 14 A | 14 A |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | - | YES | YES | YES | YES |
| 端子形式 | NO LEAD | - | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子位置 | QUAD | - | QUAD | QUAD | QUAD | QUAD |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管元件材料 | SILICON | - | SILICON | SILICON | SILICON | SILICON |
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