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“Standard”:
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
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The 2SD2230 is an element realizing ultra low V
CE(sat)
. This
transistor is ideal for muting such as stereo recorders, VCRs,
and TVs.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• Low V
CE(sat)
:
V
CE(sat)1
= 33 mV TYP. @I
C
= 100 mA, I
B
= 10 mA
V
CE(sat)2
= 150 mV TYP. @I
C
= 500 mA, I
B
= 20 mA
• High h
FE
and high current
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the
devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
D(DC)
P
T
T
j
T
stg
Ratings
16
16
5
500
200
150
−55
to +150
Unit
V
V
V
mA
mW
°C
°C
Electrode connection
1. Emitter (E)
2. Base (B)
3. Collector (C)
Marking: D46
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
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