Ordering number:ENN4717
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1853/2SC4827
High Definition CRT Display
Video Output Applications
Applications
· High-definition CRT display video output. Wide-
band amplifier.
Package Dimensions
unit:mm
2084B
[2SA1853/2SC4827]
1.9
4.5
1.2
Features
· Adoption of FBET process.
· High f
T
: f
T
=300MHz.
· High breakdown voltage : V
CEO
=200V.
· Small reverse transfer capacitance and excellent
high-frequency characteristic :
C
re
=2.2pF/NPN, 2.7pF/PNP.
· Possible to offer the 2SA1853/2SC4827 devices in a
tepa reel packaging, which facilitates automatic
incertion.
( ) : 2SA1853
10.5
2.6
1.4
1.2
7.5
1.0
8.5
1.6
0.5
1
2
3
0.5
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Colletor Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
2.5
2.5
1 : Emitter
2 : Collector
3 : Base
SANYO : FLP
Ratings
(–)200
(–)200
(–)3
(–)200
(–)300
1.3
150
–55 to +150
Unit
V
V
V
mA
mA
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
VCB=(–)150V, IE=0
VEB=(–)2V, IC=0
VCE=(–)10V, IC=(–)10mA
VCE=(–)10V, IC=(–)100mA
60*
20
Conditions
Ratings
min
typ
max
(–)0.1
(–)1.0
320*
Unit
µA
µA
* : The 2SA1853/2SC4827 are classified by 10mA h
FE
as follows :
Rank
hFE
D
60 to 120
E
100 to 200
F
160 to 320
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82003TN (KT)/91098HA (KT)/62094MT (KOTO) AX-8133 No.4717–1/4
2SA1853/2SC4827
Continued from preceding page.
Parameter
Gain Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
fT
Cob
Cre
VCE(sat)
VBE(sat)
Conditions
VCE=(–)30V, IC=(–)50mA
VCB=(–)30V, f=1MHz
VCB=(–)30V, f=1MHz
IC=(–)30mA, IB=(–)3mA
IC=(–)30mA, IB=(–)3mA
Ratings
min
typ
300
2.7
(3.2)
2.2
(2.7)
(–)1.0
(–)1.0
max
Unit
MHz
pF
pF
pF
pF
V
V
--50
IC -- VCE
2SA1853
--300
µ
A
Collector Current, IC – mA
50
IC -- VCE
2SC4827
500
µ
A
450
µ
A
400
µ
A
Collector Current, IC – mA
--40
--250
µ
A
40
350
µ
A
30
--200
µ
A
--30
300
µ
A
250
µ
A
--150
µ
A
--20
20
200
µ
A
150
µ
A
100
µ
A
--100
µ
A
--10
--50
µ
A
10
0
0
--2
--4
--6
--8
--10
--12
IB=0
--14
--16
--18
--20
0
0
2
4
6
8
10
12
14
ITR04893
160
50
µ
A
IB=0
16
18
20
Collector-to-Emitter Voltage, VCE – V
--160
--140
IC -- VBE
Collector-to-Emitter Voltage, VCE – V
ITR04894
IC -- VBE
2SA1853
VCE= --10V
Collector Current, IC – mA
140
120
100
80
60
40
20
0
2SC4827
VCE=10V
Collector Current, IC – mA
--120
--100
--80
--60
--40
--20
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
ITR04895
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR04896
Base-to-Emitter Voltage, VBE – V
3
2
hFE -- IC
Base-to-Emitter Voltage, VBE – V
3
2
hFE -- IC
2SA1853
VCE= --10V
DC Current Gain, hFE
2SC4827
VCE=10V
DC Current Gain, hFE
100
7
5
3
2
100
7
5
3
2
10
7
5
3
5
7
--10
2
3
5
7 --100
2
3
5
10
7
5
3
5
7
10
2
3
5
7
2
3
5
Collector Current, IC – mA
ITR04897
Collector Current, IC – mA
ITR04898
No.4717–2/4
2SA1853/2SC4827
1000
f T -- IC
2SA1853
VCE= --30V
1000
f T -- IC
2SC4827
VCE=30V
Gain-Bandwidth Product, fT – MHz
7
5
Gain-Bandwidth Product, fT – MHz
7
5
3
3
2
2
100
7
5
3
5
7
--10
2
3
5
7
--100
2
3
100
7
5
3
5
7
10
2
3
5
7
100
2
3
Collector Current, IC – mA
2
ITR04899
2
Collector Current, IC – mA
ITR04900
Cob, Cre -- VCB
Output Capacitance, Cob -- pF
Reverse Transfer Capacitance, Cre -- pF
2SA1853
f=1MHz
Cob, Cre -- VCB
2SC4827
f=1MHz
Output Capacitance, Cob -- pF
Reverse Transfer Capacitance, Cre -- pF
10
7
5
10
7
5
Cob
3
2
3
2
Cre
Cob
Cre
1.0
7
5
5
7 --1.0
2
3
5
7 --10
2
3
5
7 --100
ITR04901
1.0
7
5
5
7
1.0
2
3
5
7
10
2
3
5
7 100
ITR04902
Collector-to-Base Voltage, VCB -- V
2
Collector-to-Base Voltage, VCB -- V
2
VCE(sat) -- IC
2SA1853
IC / IB=10
VCE(sat) -- IC
2SC4827
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
--1.0
7
5
1.0
7
5
3
2
3
2
--0.1
7
5
3
5
7
--10
2
3
5
7
--100
2
3
0.1
7
5
3
5
7
10
2
3
5
7
100
2
3
Collector Current, IC – mA
5
3
2
ITR04903
1.4
1.3
1.2
ASO
Collector Current, IC – mA
ITR04904
PC -- Ta
ICP=300mA
IC=200mA
2SA1853 / 2SC4827
2SA1853 / 2SC4827
Collector Dissipation, P
C
– W
Collector Current, IC – mA
1m
s
100
7
5
3
2
1.0
10
ms
DC
op
era
tio
0.8
n
0.6
0.4
10
7
5
3
3
Ta=25°C
Single pulse
(For PNP, minus sign is omitted.)
5
7
10
2
3
5
7
100
2
3
0.2
0
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE – V
ITR04905
Ambient Temperature, Ta – ˚C
ITR04906
No.4717–3/4
2SA1853/2SC4827
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2003. Specifications and information herein are subject to
change without notice.
PS No.4717–4/4
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
