2SK211
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK211
FM Tuner Applications
VHF Band Amplifier Applications
•
•
•
Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
High forward transfer admitance: |Y
fs
| = 9 mS (typ.)
Extremely low reverse transfer capacitance: C
rss
= 0.1 pF (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
V
GDO
I
G
P
D
T
j
T
stg
Rating
−18
10
150
125
−55~125
Unit
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
JEITA
TOSHIBA
―
SC-59
2-3F1C
Weight: 0.012 g (typ.)
Marking
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
I
GSS
V
(BR) GDO
I
DSS
(Note)
V
GS (OFF)
⎪Y
fs
⎪
C
iss
C
rss
G
PS
NF
Test Condition
V
GS
= −0.5
V, V
DS
=
0 V
I
G
= −100 μA
V
GS
=
0 V, V
DS
=
10 V
V
DS
=
10 V, I
D
=
1
μA
V
GS
=
0 V, V
DS
=
10 V, f
=
1 kHz
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
V
GD
= −10
V, f
=
1 MHz
V
DD
=
10 V, f
=
100 MHz (Figure)
V
DD
=
10 V, f
=
100 MHz (Figure)
Min
⎯
−18
1.0
−0.4
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
9
6.0
⎯
18
2.5
Max
−10
⎯
10
−4.0
⎯
⎯
0.15
⎯
3.5
Unit
nA
V
mA
V
mS
pF
pF
dB
dB
Note: I
DSS
classification
O: 1.0~3.0 mA, Y: 2.5~6.0 mA, GR (G): 5.0~10.0 mA
1
2007-11-01
2SK211
L
1
: 0.8 mmφ Ag PLATED Cu WIRE 3 TURNS, 10 mm ID, 10 mm LENGTH
L
2
: 0.8 mmφ Ag PLATED Cu WIRE 3.5 TURNS, 10 mm ID, 10 mm LENGTH
Figure
100 MHz G
PS
, NF Test Circuit
2SK211 is measured at each group by changing R
s
.
Group
2SK211-O
2SK211-Y
2SK211-GR
RS (Ω)
0
18
Ω ±
5%
100
Ω ±
5%
2
2007-11-01
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