2SK2119
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
V
GS(off)
Min
60
±20
—
—
1.0
—
—
Forward transfer admittance
Input capacitance
|y
fs
|
Ciss
12
—
Typ
—
—
—
—
—
0.03
0.043
21
1450
Max
—
—
±10
250
2.25
0.04
0.06
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
= 50 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 15 A
1
V
GS
= 10 V*
I
D
= 15 A
1
V
GS
= 4 V*
I
D
= 15 A
1
V
DS
= 10 V*
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
Static drain to source on state R
DS(on)
resistance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Coss
Crss
t
d(on)
—
—
—
655
195
20
—
—
—
pF
pF
ns
I
D
= 15 A
V
GS
= 10 V
R
L
= 2
Ω
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note
1. Pulse Test
t
r
t
d(off)
t
f
V
DF
t
rr
—
—
—
—
—
110
225
145
1.2
100
—
—
—
—
—
ns
ns
ns
V
ns
I
F
= 25 A, V
GS
= 0
I
F
= 25 A, V
GS
= 0,
diF / dt = 50 A /
µs
See characteristic curve of 2SK1910.
3
2SK2119
Power vs. Temperature Derating
60
100
O
a p
by rea era
R is tion
DS
lim in
(o ite th
n) d is
Maximum Safe Operation Area
10
10
PW
Pch (W)
µ
Drain Current I
D
(A)
30
10
3
1
0.3
0
µ
s
s
1
10
=
m
40
s
D
C
Channel Dissipation
O
pe
ra
m
s
(1
tio
n
Sh
ot
)
(T
c
20
=
25
°C
)
Ta = 25°C
0.3
1
3
10
30
100
0
50
100
Tc (°C)
150
0.1
0.1
Case Temperature
Drain to Source Voltage V
DS
(V)
Normalized Transient Thermal Impedance
γ
S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
0.5
0.3
0.1
0.2
0.1
1.0
T
C
= 25°C
0.05
0.02
0.01
1
θch–c
(t) =
γ
S
(t) ·
θch–c
θch–c
= 3.57°C/W, T
C
= 25°C
P
DM
lse
t Pu
Sho
0.03
0.01
10
µ
T
1m
10 m
Pulse Width PW (s)
100 m
PW
1
D = PW
T
100
µ
10
4
2SK2119
Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
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Semiconductor & IC Div.
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USA
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5
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