2SD1418
Silicon NPN Epitaxial
ADE-208-1149 (Z)
1st. Edition
Mar. 2001
Application
•
Low frequency power amplifier
•
Complementary pair with 2SB1025
Outline
UPAK
1
3
2
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SD1418
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
*
1
P
C
*
2
Tj
Tstg
Ratings
120
80
5
1
2
1
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Notes: 1. PW
≤
10 ms, Duty cycle
≤
20%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
120
80
5
—
60
30
—
—
—
—
Typ
—
—
—
—
—
—
—
—
140
12
Max
—
—
—
10
320
—
1
1.5
—
—
V
V
MHz
pF
Unit
V
V
V
µA
Test conditions
I
C
= 10
µA,
I
E
= 0
I
C
= 1 mA, R
BE
=
∞
I
E
= 10
µA,
I
C
= 0
V
CB
= 100 V, I
E
= 0
V
EB
= 5 V, I
C
= 150 mA*
2
V
CE
= 5 V, I
C
= 500 mA*
2
I
C
= 500 mA, I
B
= 50 mA*
2
V
CE
= 5 V, I
C
= 150 mA*
2
V
CE
= 5 V, I
C
= 150 mA*
2
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
V
(BR)EBO
I
CBO
h
FE1
*
1
h
FE2
Collector to emitter saturation
voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
V
CE(sat)
V
BE
f
T
Cob
Notes: 1. The 2SD1418 is grouped by h
FE1
as follows.
2. Pulse test
Mark
h
FE1
DA
60 to 120
DB
100 to 200
DC
160 to 320
2
2SD1418
Maximum Collector Dissipation Curve
1.2
Collector Power Dissipation P
C
(W)
(on the alumina ceramic board)
Collector Current I
C
(A)
Typical Output Characteristics
1.0
35
30
25
20
15
10
5
0.4
2
1
0.5 mA
I
B
= 0
0
50
100
150
Ambient Temperature Ta (°C)
0
2
4
6
8
10
Collector to Emitter Voltage V
CE
(V)
0.8
0.8
0.6
0.4
0.2
Typical Transfer Characteristics
500
V
CE
= 5 V
100
Ta = 75
°
C
25
–25
DC Current Transfer Ratio h
FE
Collector Current I
C
(mA)
200
DC Current Transfer Ratio vs. Collector Current
300
V
CE
= 5 V
250
°
C
Ta = 75
200
150
100
50
0
50
20
10
5
2
1
0
25
–25
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage V
BE
(V)
1
3
10
30
100
300 1,000
Collector Current I
C
(mA)
3
2SD1418
Saturation Voltage vs. Collector Current
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Base to Emitter Saturation Voltage V
BE(sat)
(V)
0.6
0.5
0.4
0.3
0.2
0.1
0
1.2
1.0
0.8
V
BE(sat)
I
C
= 10 I
B
Pulse
0.6
0.4
0.2
V
CE(sat)
0
1
3
10
30
100 300
Collector Current I
C
(mA)
1,000
Collector Output Capacitance C
ob
(pF)
Gain Bandwidth Product f
T
(MHz)
Gain Bandwidth Product vs. Collector Current
240
V
CE
= 5 V
Pulse
200
160
120
80
40
0
10
Collector Output Capacitance vs.
Collector to Base Voltage
200
100
50
f = 1 MHz
I
E
= 0
20
10
5
2
1
2
5
10 20
50 100
Collector to Base Voltage V
CB
(V)
30
100
300
Collector Current I
C
(mA)
1,000
4
2SD1418
Package Dimensions
As of January, 2001
Unit: mm
4.5
±
0.1
0.4
1.8 Max
φ
1
1.5
±
0.1
0.44 Max
(2.5)
(1.5)
1.5 1.5
3.0
0.8 Min
0.44 Max
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
(0.4)
0.53 Max
0.48 Max
2.5
±
0.1
4.25 Max
UPAK
—
Conforms
0.050 g
(0.2)
5