2SK3681-01
FUJI POWER MOSFET
200309
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-Repetitive
Maximum avalanche current
Repetitive or
Maximum avalanche current
Non-Repetitive
Maximum avalanche energy
Maximum Drain-Source dV/dt
Peak diode recovery dV/dt
Max. power dissipation
Symbol Ratings
V
DS
600
V
DSX
600
I
D
±43
I
D(puls]
±172
V
GS
±30
I
AS
43
I
AR
E
AS
dV
DS
/dt
dV/dt
P
D
21.5
808.9
20
5
2.50
600
+150
-55 to +150
Unit
V
V
A
A
V
A
Remarks
V
GS
=-30V
Operating and storage
T
ch
temperature range
T
stg
*1 See to Avalanche Current Graph
*2 See to Avalanche Energy Graph
*3 I
F
< -I
D
, -di/dt=50A/µs, V
CC
< BV
DSS
, Tch < 150°C
=
=
=
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Tch=25°C
*1
A
Tch<150°C
=
*1
mJ
L=802µH
V
CC
=60V *2
kV/s
VDS< 600V
=
kV/µs *3
Ta=25°C
W
Tc=25°C
°C
°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (T
c
=25°C unless otherwise specified)
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250µA
V
GS
=0V
µA
I
D
= 250
V
DS
=V
GS
T
ch
=25°C
V
DS
=600V V
GS
=0V
T
ch
=125°C
V
DS
=480V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=26A V
GS
=10V
I
D
=21.5A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V I
D
=21.5A
V
GS
=10V
R
GS
=10
Ω
V
CC
=300V
I
D
=43A
V
GS
=10V
L=802µH T
ch
=25°C
I
F
=43A V
GS
=0V T
ch
=25°C
I
F
=43A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
Min.
600
3.0
Typ.
Max.
5.0
25
250
100
0.16
Units
V
V
µA
nA
Ω
S
pF
15
10
0.12
30
5360
8040
680
1020
40
60
80
120
87
131
190
285
44
66
112
168
34
51
40
60
1.00
0.98
22.0
ns
nC
43
1.50
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
0.208
50.0
Units
°C/W
°C/W
1
2SK3681-01
Characteristics
Allowable Power Dissipation
PD=f(Tc)
800
120
110
700
100
600
90
80
500
70
FUJI POWER MOSFET
Typical Output Characteristics
ID=f(VDS):80
µ
s pulse test,Tch=25
°
C
20V
10V
8V
PD [W]
ID [A]
400
60
50
7.0V
300
40
200
30
20
100
10
0
0
25
50
75
Tc [
°
C]
100
125
150
0
0
4
8
12
VDS [V]
16
20
24
VGS=6.0V
6.5V
Typical Transfer Characteristic
ID=f(VGS):80
µ
s pulse test,VDS=25V,Tch=25
°
C
100
100
Typical Transconductance
gfs=f(ID):80
µ
s pulse test,VDS=25V,Tch=25
°
C
10
10
ID[A]
1
1
0.1
0.1
0.1
1
ID [A]
10
100
0
1
2
3
4
5
VGS[V]
6
7
8
9
10
gfs [S]
0.4
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
µ
s pulse test,Tch=25
°
C
VGS=6V
6.5V
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=26A,VGS=10V
0.5
0.4
0.3
RDS(on) [
Ω
]
0.2
8V
10V
20V
RDS(on) [
Ω
]
7.5V
0.3
max.
0.2
typ.
0.1
0.1
0.0
0
20
40
ID [A]
60
80
100
0.0
-50
-25
0
25
50
Tch [
°
C]
75
100
125
150
2
2SK3681-01
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
µ
A
7.0
6.5
6.0
5.5
5.0
max.
Typical Gate Charge Characteristics
VGS=f(Qg):ID=43A,Tch=25
°
C
14
12
Vcc= 120V
10
480V
8
300V
VGS(th) [V]
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
Tch [
°
C]
100
125
150
0
0
20
40
2
4
min.
VGS [V]
6
60
80
100
Qg [nC]
120
140
160
180
200
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
10
5
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
µ
s pulse test,Tch=25
°
C
1000
10
4
100
Ciss
C [pF]
10
3
IF [A]
Coss
Crss
10
0
10
10
2
1
10
1
10
1
10
2
10
3
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
VSD [V]
VDS [V]
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10
Ω
Maximum Avalanche Energy vs. starting Tch
I(AV)=f(starting Tch):Vcc=60V
60
50
td(off)
40
10
2
td(on)
Non-Repetitive
(Single Pulse)
I
AV
[A]
t [ns]
30
Repetitive
20
tr
10
1
tf
10
10
0
0
10
-1
10
0
10
ID [A]
1
10
2
0
25
50
75
100
125
150
175
200
starting Tch [
°
C]
3
2SK3681-01
FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=43A
2500
2000
I
AS
=18A
1500
EAV [mJ]
I
AS
=26A
1000
I
AS
=43A
500
0
0
25
50
75
starting Tch [
°
C]
100
125
150
10
2
Maximum Avalanche Current Pulsewidth
I
AV
=f(t
AV
):starting Tch=25
°
C,Vcc=60V
Single Pulse
Avalanche Current I
AV
[A]
10
1
10
0
10
-1
10
-2
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
t
AV
[sec]
Maxmum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
10
1
10
0
Zth(ch-c) [
°
C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
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4
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