Ordering number:ENN3250
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1455/2SD2203
80V/7A High-Current Switching Applications
Features
· Low collector-to-emitter saturation voltage.
· Large current capacity.
· Micaless package facilitating easy mounting.
Package Dimensions
unit:mm
2041A
[2SB1455/2SD2203]
10.0
3.2
3.5
7.2
4.5
2.8
18.1
16.0
5.6
14.0
1.6
1.2
0.75
1 2
3
2.55
2.4
2.4
0.7
2.55
( ) : 2SB1455
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
2.55
2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
Conditions
Ratings
(–)90
(–)80
(–)6
(–)7
(–)12
2.0
30
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)80V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)4A
VCE=(–)5V, IC=(–)1A
70*
30
20
MHz
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
280*
Unit
mA
mA
* : The 2SB1455/2SD2203 are classified by 1A h
FE
as follows :
Rank
hFE
Q
70 to 140
R
100 to 200
S
140 to 280
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42804TN (PC)/N1098HA (KT)/5111MH (KOTO) No.3250–1/4
2SB1455/2SD2203
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
VCE(sat)
Conditions
IC=(–)4A, IB=(–)0.4A
(–)90
(–)80
(–)6
(0.2)
0.1
(0.7)
1.6
(0.2)
0.4
Ratings
min
typ
max
0.4
(–0.5)
Unit
V
V
V
V
V
µs
µs
µs
µs
µs
µs
V(BR)CBO IC=(–)1mA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO IE=(–)1mA, IC=0
ton
tstg
tf
See specified test circuit.
See specified test circuit.
See specified test circuit.
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
50Ω
IB1
IB2
1Ω
100Ω
+
100µF
+
470µF
OUTPUT
RL
25Ω
VBE=--5V
VCC=50V
10IB1=--10IB2=IC=2A
For PNP, the polarity is reversed.
--10
--9
IC -- VCE
2SB1455
From top
--500mA
--450mA
--400mA
--350mA
mA
--300
mA
--250
--200mA
10
9
IC -- VCE
2SD2203
mA
00
A
5
m
0
45
400
A
250m
A
00m
A
2
A
300m
150m
A
50m
100mA
A
3
m
Collector Current, IC – A
--7
--6
--5
--4
--3
--2
--1
0
--150mA
Collector Current, IC – A
--8
8
7
6
5
4
3
2
1
--100mA
--50mA
50mA
IB=0
0
--0.4
--0.8
--1.2
--1.6
--2.0
ITR09755
0
IB=0
0
0.4
0.8
1.2
1.6
2.0
Collector-to-Emitter Voltage, VCE – V
--20
--18
Collector-to-Emitter Voltage, VCE – V
ITR09756
20
18
IC -- VCE
2SB1455 From top
--500mA
--450mA
--400mA
--350mA
--300mA
--250mA
--200mA
IC -- VCE
2SD2203 From top
500mA
450mA
400mA
350mA
300mA
250mA
Collector Current, IC – A
--14
--12
--10
--8
--6
--4
--2
0
A
--150m
A
--100m
Collector Current, IC – A
--16
16
14
12
10
8
6
4
2
150mA
100mA
50mA
--50mA
200m
A
IB=0
0
--400
--800
--1200
--1600
--2000
ITR09757
0
IB=0
0
400
800
1200
1600
2000
Collector-to-Emitter Voltage, VCE – V
Collector-to-Emitter Voltage, VCE – V
ITR09758
No.3250–2/4
2SB1455/2SD2203
--14
IC -- VBE
2SB1455
VCE=--2V
14
IC -- VBE
2SD2203
VCE=2V
--12
12
Collector Current, IC – A
Collector Current, IC – A
--10
10
20
°
C
--8
8
25
°
C
--40
°
C
20
°
C
25
°
C
0.8
Ta=
1
--6
6
--4
4
--2
2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
0
0
0.2
0.4
0.6
Ta=
1
--40
°
C
1.0
1.2
1.4
Base-to-Emitter Voltage, VBE – V
1000
5
3
ITR09759
1000
Base-to-Emitter Voltage, VBE – V
ITR09760
hFE -- IC
2SB1455
VCE=--2V
Ta=120
°C
hFE -- IC
Ta=120
°C
25
°C
5
3
2
2SD2203
VCE=2V
DC Current Gain, hFE
2
DC Current Gain, hFE
25
°C
100
5
3
2
10
5
3
2
1.0
--0.01 2
3
5
2
3
5
2
3
5
2
--10
ITR09761
100
5
3
2
10
5
3
2
1.0
0.01
2
3
5
--40
°C
--40
°C
--0.1
--1.0
0.1
2
3
5
1.0
2
3
5
Collector Current, IC – A
--100
5
Collector Current, IC – A
100
2
10
ITR09762
VCE(sat) -- IC
2SB1455
IC / IB=10
VCE(sat) -- IC
2SD2203
IC / IB=10
5
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
2
--10
5
2
--1.0
5
2
--0.1
5
2
2
10
5
2
1.0
5
2
0.1
5
2
12
Ta=
--40
°C
0
°
C
°
C
25
25
°C
C
20
°
a=1
T
°
C
--40
2
3
5
2
--0.01
--0.01 2
3
5
--0.1
2
3
5
--1.0
2
3
5
Collector Current, IC – A
--100
5
2
--10
ITR09763
0.01
0.01
2
3
5
0.1
2
3
5
1.0
10
Collector Current, IC – A
100
5
ITR09764
VBE(sat) -- IC
2SB1455
IC / IB=10
VBE(sat) -- IC
2SD2203
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
3
2
--10
5
3
2
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
3
2
10
5
3
2
1.0
5
3
2
0.01
--1.0
5
3
2
--0.01 2
Ta=--40
°C
120
°C
3
5
--0.1
2
3
25
°C
Ta=--40
°C
25
°C
120
°C
2
3
5
0.1
2
3
5
1.0
2
3
5
2
10
ITR09766
5
--1.0
2
3
5
Collector Current, IC – A
2
--10
ITR09765
Collector Current, IC – A
No.3250–3/4
2SB1455/2SD2203
2
--10
7
5
3
2
ASO
ICP=–12A
IC=–7A
2SB1455
2
10
ASO
ICP=–12A
IC=–7A
DC
2SD2203
10
10
s
0m
Collector Current, IC – A
Collector Current, IC – A
7
5
3
2
1.0
7
5
3
2
0.1
op
era
tio
s
0m
s
1m
ms
10
DC
s
1m
s
m
10
n
--1.0
7
5
3
2
op
era
t io
n
--0.1
7
5
1ms to 100ms : Single pulse
2
3
5
7
7
5
2
3
5
7 --100
2
ITR09767
1ms to 100ms : Single pulse
2
3
5
7
--1.0
Collector-to-Emitter Voltage, VCE – V
--10
1.0
Collector-to-Emitter Voltage, VCE – V
10
2
3
5
7 100
2
ITR09768
2.4
PC -- Ta
2SB1455 / 2SD2203
40
PC -- Ta
2SB1455 / 2SD2203
Collector Dissipation, P
C
– W
Collector Dissipation, P
C
– W
100
120
140
160
2.0
30
1.6
No
he
1.2
at
sin
k
20
0.8
10
0.4
0
0
20
40
60
80
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR09769
Ambient Temperature, Ta – ˚C
ITR09770
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 2004. Specifications and information herein are subject to
change without notice.
PS No.3250–4/4
PCB设计
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