Ordering number:ENN2020A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1141/2SD1681
18V/1.2A Switching Applications
Applications
· Converters, relay drivers, low-voltage and high
power AF Amplifier.
Package Dimensions
unit:mm
2042B
[2SB1141/2SD1681]
8.0
1.0
1.4
Features
· Low saturation voltage and excellent linearity of h
FE
.
· Wide ASO.
1.6
0.8
4.0
1.0
3.3
3.0
1.5
7.5
3.0
0.8
0.75
15.5
11.0
0.7
1
2
3
4.8
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
1.7
( ) : 2SB1141
2.4
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Ratings
(–)20
(–)18
(–)5
(–)1.2
(–)2.0
1.5
Unit
V
V
V
A
A
W
W
Tc=25˚C
10
150
–55 to +125
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)15V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V,
VCE=(–)2V,
IC=(–)100mA
IC=(–)1A
70*
40
150
MHz
Conditions
Ratings
min
typ
max
(–)100
(–)100
400*
Unit
nA
nA
VCE=(–)10V, IC=(–)50mA
* : The 2SB1141/2SD1681 are classified by 100mA h
FE
as follows :
Rank
hFE
Q
70 to 140
R
100 to 200
S
140 to 280
T
200 to 400
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2003TN (KOTO)/92098HA (KT)/4107KI/4046KI No.2020–1/4
2SB1141/2SD1681
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Cob
VCE(sat)
Conditions
VCB=(–)10V, f=1MHz
IC=(–)500mA, IB=(–)50mA
Ratings
min
typ
(30)20
(–170)
120
(–)0.85
(–)20
(–)18
(–)5
50
(60)
200
70
(–400)
300
(–)1.2
max
Unit
pF
mV
mV
V
V
V
V
ns
ns
ns
ns
VBE(sat) IC=(–)500mA, IB=(–)50mA
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
ton
tstg
tf
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
+
100μF
VBE= --5V
+
470μF
VCC=12V
RB
RL
24Ω
IC=10IB1= --10IB2=500mA
(For PNP, the porarity is reversed.)
--2.0
IC -- VCE
mA
--2
0
A
--15m
2SB1141
1.6
1.4
IC -- VCE
10mA
8mA
2SD1681
Collector Current, IC – A
Collector Current, IC – A
--1.6
--1.2
--12mA
--10mA
--8mA
--6mA
1.2
1.0
0.8
6mA
--0.8
--4mA
4mA
0.6
0.4
0.2
--2mA
--0.4
2mA
0
0
--1
--2
--3
--4
IB=0
--5
--6
ITR09015
0
0
1
2
3
4
IB=0
5
6
ITR09016
Collector-to-Emitter Voltage, VCE – V
--1.4
Collector-to-Emitter Voltage, VCE – V
1.4
IC -- VBE
2SB1141
VCE= --2V
Collector Current, IC – A
IC -- VBE
2SD1681
VCE=2V
--1.2
1.2
Collector Current, IC – A
--1.0
1.0
--0.8
25
°
C
0.8
Ta=7
5
°
C
--25
°
C
--0.4
0.4
--0.2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR09018
Base-to-Emitter Voltage, VBE – V
ITR09017
Base-to-Emitter Voltage, VBE – V
Ta=7
5
°
C
25
°
C
--25
°
C
--0.6
0.6
No.2020–2/4
2SB1141/2SD1681
1000
7
5
hFE -- IC
2SB1141
VCE= --2V
1000
7
5
hFE -- IC
2SD1681
VCE=2V
DC Current Gain, hFE
3
2
DC Current Gain, hFE
Ta=75°C
25°C
--25°C
3
2
Ta=75°C
25°C
--25
°C
100
7
5
3
2
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
100
7
5
3
2
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC – A
1000
ITR09019
1000
Collector Current, IC – A
ITR09020
f T -- IC
2SB1141
VCE= --10V
f T -- IC
2SD1681
VCE=10V
Gain-Bandwidth Product, fT – MHz
Gain-Bandwidth Product, fT – MHz
7
5
3
2
7
5
3
2
100
7
5
3
2
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
ITR09021
100
7
5
3
2
7 0.01
2
3
5
7
0.1
2
3
5
7
2
1.0
ITR09022
Collector Current, IC – A
2
Collector Current, IC – A
2
Cob -- VCB
2SB1141
f=1MHz
Cob -- VCB
2SD1681
f=1MHz
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
100
7
5
100
7
5
3
2
3
2
10
7
5
10
7
--1.0
2
3
5
7
2
3
5
7 --100
ITR09023
--10
5
7
1.0
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB -- V
--1000
7
Collector-to-Base Voltage, VCB -- V
1000
7
7 100
ITR09024
VCE(sat) -- IC
2SB1141
IC / IB=10
VCE(sat) -- IC
2SD1681
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
5
3
2
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
5
3
2
--100
7
5
3
2
25
°
C
100
7
5
3
2
25
=7
Ta
C
5
°
°
C
C
5
°
--2
=
Ta
7
5
°
C
C
5
°
--2
--10
7 --0.01
2
3
5
10
Collector Current, IC – A
7 --0.1
2
3
5
7 --1.0
2
3
7 0.01
2
3
5
ITR09025
Collector Current, IC – A
7 0.1
2
3
5
7 1.0
2
3
ITR09026
No.2020–3/4
2SB1141/2SD1681
--10
7
VBE(sat) -- IC
2SB1141
IC / IB=10
10
7
VBE(sat) -- IC
2SD1667
2SD1681
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
3
2
3
2
--1.0
7
5
3
7 --0.01
Ta= --25°C
25
°
C
75
°
C
1.0
7
5
3
Ta= --25°C
25
°
C
75
°
C
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC – A
ITR09027
12
Collector Current, IC – A
ITR09028
ASO
3
2
PC -- Ta
2SB1141 / 2SD1681
ICP=2A
IC=1.2A
100ms
2SB1141 / 2SD1681
1ms
1.0
7
5
3
2
Collector Dissipation, P
C
– W
10m
s
10
Collector Current, IC – A
DC
op
n
tio
era
8
DC
op
era
t
ion
6
Tc
=2
Ta
=2
5
°
C
5
°
C
4
0.1
7
2
1.5
0
5
1.0
Ta=25°C
Single pulse
2
3
5
7
10
2
3
No heat sin
0
20
40
60
k
80
100
120
140
160
Collector-to-Emitter Voltage, VCE – V
ITR09029
Ambient Temperature, Ta – ˚C
ITR09030
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2003. Specifications and information herein are subject
to change without notice.
PS No.2020–4/4
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
