Ordering number : EN1943C
2SA1392 / 2SC3383
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1392 / 2SC3383
Features
•
•
Low-Frequency General-Purpose
Amp Applications
Adoption of FBET process.
AF amp.
Specifications
( ) : 2SA1392
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
(--)60
(--)50
(-
-)6
(-
-)200
(-
-)400
500
150
--55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Conditions
VCB=(--)40V, IE=0A
VEB=(--)5V, IC=0A
VCE=(--)6V, IC=(--)1mA
VCE=(--)6V, IC=(-
-)0.1mA
VCE=-
-6V, IC=--10mA
VCB=(--)6V, f=1MHz
IC=(--)100mA, IB=(--)10mA
IC=(--)100mA, IB=(--)10mA
IC=(--)10µA, IE=0A
IC=(--)1mA, RBE=∞
IE=(--)10µA, IC=0A
(-
-)60
(-
-)50
(--)6
100*
70
(200)250
(3.7)2.7
(--)0.3
(--)1.0
MHz
pF
V
V
V
V
V
Ratings
min
typ
max
(--)0.1
(--)0.1
560*
Unit
µA
µA
*
: The 2SA1392 / 2SC3383 are classified by 1mA hFE as follws:
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
U
280 to 560
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1806CA SY IM TA-4325, X-6010 / 92502AS (KT) / 71598HA (KT) / 4277TA, TS No.1943-1/5
2SA1392 / 2SC3383
Package Dimensions
unit : mm (typ)
7522-002
5.0
4.0
4.0
0.45
0.5
0.6
2.0
0.45
14.0
5.0
0.44
1 2 3
1 : Emitter
2 : Collector
3 : Base
1.3
1.3
SANYO : NP
--
20
--7
0
µ
A
IC -- VCE
--60
µ
A
2SA1392
µ
A
--50
A
--40
µ
20
IC -- VCE
60
µ
A
2SC3383
Collector Current, IC -- mA
Collector Current, IC -- mA
--
16
16
50
µ
A
--
12
--30
µ
A
--20
µ
A
12
40
µA
30
µA
--
8
8
20
µA
4
--
4
--10µA
10µA
0
0
IB=0
µA
--
10
--
20
--
30
--
40
--
50
Collector-to-Emitter Voltage, VCE -- V
ITR03393
0
0
10
20
IB=0
µA
30
40
50
ITR03394
--
50
IC -- VCE
0
µ
--25
A
Collector-to-Emitter Voltage, VCE -- V
50
IC -- VCE
Collector Current, IC -- mA
--150
µA
Collector Current, IC -- mA
--
40
--400
µA
--350
µA
--300
µA
2SA1392
40
2SC3383
--200
µ
A
µ
A
300 0
µ
A
25
µ
A
200
A
150
µ
--
30
30
--100
µA
--
20
100
µ
A
20
--50µA
--
10
50
µA
10
0
0
IB=0
µA
--
0.2
--
0.4
--
0.6
--
0.8
Collector-to-Emitter Voltage, VCE -- V
--
1.0
ITR03395
0
0
0.2
0.4
IB=0
µA
0.6
0.8
1.0
ITR03396
Collector-to-Emitter Voltage, VCE -- V
No.1943-2/5
2SA1392 / 2SC3383
--
240
--
200
IC -- VBE
2SA1392
VCE= --6V
120
IC -- VBE
2SC3383
VCE=6V
100
Collector Current, IC -- mA
--
160
--
120
--
80
--
40
0
0
0.2
0.4
0.6
Collector Current, IC -- mA
1.0
1.2
ITR03397
Ta=25
°
C
80
60
40
20
0
0.8
0
200
400
600
800
1000
ITR03398
Base-to-Emitter Voltage, VBE -- V
5
f T -- IC
Base-to-Emitter Voltage, VBE -- V
1000
f T -- IC
Gain-Bandwidth Product, f T -- MHz
3
2
Gain-Bandwidth Product, f T -- MHz
2SA1392
VCE=
--6V
7
5
3
2
2SC3383
VCE=6V
100
7
5
3
2
100
7
5
3
2
10
10
5
7
--
1.0
2
5 7
--
100
2 3
--
10 2 3
Collector Current, IC -- mA
ITR03399
3
5
7
5
7 1.0
2
3
5
7
10
2
3
5
1000
7
5
hFE -- IC
Collector Current, IC -- mA
3
2
1000
7
5
3
2
100
7
5
3
7 100
2
ITR03400
hFE -- IC
2SA1392
VCE= --6V
Ta=25
°C
2SC3383
VCE=6V
DC Current Gain, hFE
2
100
7
5
3
2
10
DC Current Gain, hFE
3
3
2
10
0.1
--
0.1
2
2
5
--
1.0 2 3 5
--
10 2 3 5
--
100
Collector Current, IC -- mA
2
3
5
2 3
5
1.0
2 3
5
10
2 3
5
ITR03401
100
7
5
Cob -- VCB
Collector Current, IC --
100 2 3 5 1000
ITR03402
mA
Cob -- VCB
2SA1392
f=1MHz
2SC3383
f=1MHz
Output Capacitance, Cob -- pF
10
7
5
Output Capacitance, Cob -- pF
5
3
2
10
7
5
3
2
1.0
7
5
3
2
1.0
7
5
3
2
--
0.1
--
10 2 3
--
1.0 2 3 5
Collector-to-Base Voltage, VCB -- V
2
3
5
5
--
100
5
0.1
2 3
5
1.0
2
3
5
10
2
3
ITR03403
Collector-to-Base Voltage, VCB -- V
100
ITR03404
5
No.1943-3/5
2SA1392 / 2SC3383
--
10
5
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2SA1392
hFE =10
1.0
7
5
3
2
VCE(sat) -- IC
2SC3383
hFE =10
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
3
2
--
1.0
5
3
2
0.1
7
5
3
2
0.01
--
0.1
5
3
2
2
3
5
--
0.01
--
0.1
--
10
7
--
1.0 2 3 5
--
10 2 3 5
--
100 2 3
ITR03405
Collector Current, IC -- mA
0.1
2
3
5
1.0
2
3
5
10
2
3
5
VBE(sat) -- IC
Collector Current, IC -- mA
600
100 2 3 5
ITR03406
PC -- Ta
2SA1392
hFE=10
2SA1392 / 2SC3383
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector Dissipation, PC -- mW
2 3
5
5
500
3
2
400
300
--
1.0
7
5
3
200
100
0
--
0.1
7
5
3
--
1.0 2 3 5
--
10 2 3 5
Collector Current, IC -- mA
--
100
2
3
0
20
40
60
80
100
120
140
160
ITR03407
1.0
Ambient Temperature, Ta --
°C
ITR03408
ASO
ASO
2SA1392
2SC3383
5
ICP= --400mA
IC= --200mA
DC
Collector Current, IC -- A
Collector Current, IC -- A
2
10
op
era
10
1m
ms
s
ICP=400mA
IC=200mA
DC
ope
r
3
2
0.1
5
3
2
0.01
5
3
2
0m
--
100
7
5
3
2
s
10
100
ms
ms
atio
n
1m
s
tio
n
--
10
7
5
3
2
--
1.0
2
2
3
5
7
--
100
--
10
Collector-to-Emitter Voltage, VCE -- V
ITR03409
3
5
7
0.001
1.0
2
3
5
7
10
2
3
5
Collector-to-Emitter Voltage, VCE -- V
100
ITR03410
7
No.1943-4/5
2SA1392 / 2SC3383
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of October, 2006. Specifications and information herein are subject
to change without notice.
PS No.1943-5/5
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