INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC5387
DESCRIPTION
·High
Breakdown Voltage-
: V
CBO
= 1200V (Min)
·High
Switching Speed
·Low
Saturation Voltage
APPLICATIONS
·Horizontal
deflection output for high resolution display,
color TV.
·High
speed switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
1200
V
V
CEO
Collector-Emitter Voltage
600
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current- Continuous
10
A
I
CM
Collector Current- Pulse
20
A
I
B
B
Base Current- Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
5
A
P
C
50
W
T
J
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC5387
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 10mA; I
B
= 0
600
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 8A; I
B
= 2A
B
3.0
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 8A; I
B
= 2A
B
1.5
V
I
CBO
Collector Cutoff Current
V
CB
= 1200V; I
E
= 0
1
mA
I
EBO
Emitter Cutoff Current
V
EB
= 5V; I
C
= 0
10
μA
h
FE-1
DC Current Gain
I
C
= 1A ; V
CE
= 5V
15
35
h
FE-2
DC Current Gain
I
C
= 8A ; V
CE
= 5V
4.3
7.8
f
T
Current-Gain—Bandwidth Product
I
C
= 0.1A ; V
CE
= 10V
1.7
MHz
C
OB
Output Capacitance
I
E
= 0 ; V
CB
= 10V; f
test
= 1.0MHz
130
pF
t
stg
Storage Time
I
CP
= 6A , I
B1(
end
)
= 1.2A;f
H
= 64kHz
2.5
3.5
μs
t
f
Fall Time
0.15
0.3
μs
isc Website：www.iscsemi.cn
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