Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220F package
・Complement
to type 2SB1135
・Low
collector saturation voltage
・Wide
safe operating area
APPLICATIONS
・For
relay drivers,high-speed inverters,
converters,and other general high-current
switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
2SD1668
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
固电
导½
半
CH
IN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
ANG
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
MAX
60
50
6
7
12
UNIT
V
V
V
A
A
T
a
=25℃
P
C
Collector dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2
W
30
150
-55~150
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=1mA ;R
BE
=∞
I
C
=1mA ;I
E
=0
I
E
=1mA ;I
C
=0
I
C
=4A; I
B
=0.4A
V
CB
=40V; I
E
=0
V
EB
=4V; I
C
=0
I
C
=1A ; V
CE
=2V
I
C
=5A ; V
CE
=2V
I
C
=1A ; V
CE
=5V
70
30
MIN
50
60
6
2SD1668
TYP.
MAX
UNIT
V
V
V
0.4
100
100
280
V
μA
μA
Switching times
t
on
t
s
t
f
固电
Fall time
Turn-on time
导½
半
HA
INC
Storage time
ES
NG
S
I
C
=2.0A; I
B1
=-I
B2
=0.2A
V
CC
=20V;R
L
=10Ω
MIC
E
DUC
ON
10
OR
T
MHz
0.20
0.90
0.30
μs
μs
μs
h
FE-1
Classifications
Q
70-140
R
100-200
140-280
2
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