Power F-MOS FETs
2SK1980
Silicon N-Channel Power F-MOS FET
s
Features
q
Avalanche energy capacity guaranteed: EAS > 15mJ
q
V
GSS
= ±30V guaranteed
q
High-speed switching: t
f
= 25ns
q
No secondary breakdown
unit: mm
M
Di ain
sc te
on na
tin nc
ue e/
d
8.5±0.2
6.0±0.5
3.4±0.3
1.0±0.1
10.5min.
2.0
q
Contactless relay
q
Diving circuit for a solenoid
q
Driving circuit for a motor
q
Control equipment
q
Switching power supply
s
Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
Symbol
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
V
DSS
V
GSS
I
D
I
DP
DC
Pulse
Avalanche energy capacity
Allowable power
dissipation
EAS
*
P
D
T
C
= 25°C
Ta = 25°C
Channel temperature
Storage temperature
T
ch
T
stg
*
L = 5mH, I
L
= 2.45A, V
DD
= 50V, 1 pulse
Drain to Source cut-off current
Gate to Source leakage current
nt
in
Parameter
Symbol
ue
s
Electrical Characteristics
(T
C
= 25°C)
I
DSS
I
GSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
oss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
/D
Drain to Source breakdown voltage
V
DSS
ce
Gate threshold voltage
an
Drain to Source ON-resistance
en
Forward transfer admittance
M
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
Turn-on time
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
ai
nt
Diode forward voltage
Pl
e
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
10.0±0.3
1.5±0.1
s
Applications
1.5max.
1.1max.
0.8±0.1
0.5max.
2.54±0.3
Ratings
800
Unit
V
V
A
A
5.08±0.5
2
1
3
±30
±2
±4
15
40
1: Gate
2: Drain
3: Source
N Type Package
mJ
W
1.3
150
°C
°C
−55
to +150
Conditions
min
typ
max
0.1
±1
Unit
mA
µA
V
V
co
V
DS
= 640V, V
GS
= 0
I
D
= 1mA, V
GS
= 0
is
V
GS
= ±30V, V
DS
= 0
800
2
V
DS
= 25V, I
D
= 1mA
5
7
V
GS
= 10V, I
D
= 1A
V
DS
= 25V, I
D
= 1A
I
DR
= 2A, V
GS
= 0
4.8
1.1
Ω
S
0.7
−1.3
V
350
60
25
15
pF
pF
pF
ns
ns
ns
ns
V
DS
= 20V, V
GS
= 0, f = 1MHz
V
GS
= 10V, I
D
= 1A
V
DD
= 200V, R
L
= 200Ω
20
25
60
3.125
°C/W
1
Power F-MOS FETs
Area of safe operation (ASO)
100
30
10
I
DP
3 I
D
1
0.3
1ms
0.1
0.03
0.01
1
3
10
30
100
300
1000
10ms
100ms
DC
t=100µs
50
2SK1980
P
D
Ta
25
EAS
T
j
Avalanche energy capacity EAS (mJ)
V
DD
=50V
I
D
=2A
20
Allowable power dissipation P
D
(W)
Non repetitive pulse
T
C
=25˚C
(1) T
C
=Ta
(2) Without heat sink
(P
D
=1.3W)
40
Drain current I
D
(A)
30
(1)
15
20
10
10
(2)
0
0
20
40
60
80 100 120 140 160
5
0
25
50
75
100
125
150
Drain to source voltage V
DS
(V)
Ambient temperature Ta (˚C)
Junction temperature T
j
(˚C)
I
D
V
DS
3.0
T
C
=25˚C
V
GS
=15V
2.5
10V
2.0
2.5
I
D
V
GS
Drain to source ON-resistance R
DS(on)
(
Ω
)
12
R
DS(on)
I
D
V
DS
=25V
T
C
=25˚C
10
Drain current I
D
(A)
Drain current I
D
(A)
T
C
=0˚C
25˚C
150˚C
100˚C
2.0
6.5V
8
1.5
1.5
6.0V
1.0
5.5V
0.5
40W
5.0V
6
V
GS
=10V
15V
1.0
4
0.5
2
0
0
10
20
30
40
50
60
0
0
2
4
6
8
10
12
0
0
0.5
1.0
1.5
2.0
2.5
3.0
Drain to source voltage V
DS
(V)
Gate to source voltage V
GS
(V)
Drain current I
D
(A)
| Y
fs
|
I
D
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) C
iss
,C
oss
,C
rss
(pF)
2.4
10000
C
iss
, C
oss
, C
rss
V
DS
120
V
DS
=25V
T
C
=25˚C
f=1MHz
T
C
=25˚C
t
d(on)
, t
r
, t
f
, t
d(off)
I
D
V
DD
=200V
V
GS
=10V
T
C
=25˚C
Forward transfer admittance |Y
fs
| (S)
2.0
3000
1000
300
100
Switching time t
d(on)
,t
r
,t
f
,t
d(off)
(ns)
100
1.6
C
iss
80
t
d(off)
1.2
60
C
oss
30
10
3
1
0
50
100
150
200
C
rss
0.8
40
t
f
20
t
r
t
d(on)
0
0
0.5
1.0
1.5
2.0
0.4
0
0
0.5
1.0
1.5
2.0
2.5
3.0
Drain current I
D
(A)
Drain to source voltage V
DS
(V)
Drain current I
D
(A)
2
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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