2SD1141(K)
Silicon NPN Triple Diffused
Application
High voltage switching, igniter
Outline
TO-220AB
2
1
1. Base
2. Collector
(Flange)
3. Emitter
1
2 3
6 kΩ
(Typ)
450
Ω
(Typ)
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
*
Tj
Tstg
1
Rating
400
300
7
6
10
40
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SD1141(K)
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter sustain
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Turn off time
Symbol
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CEO
h
FE
V
CE(sat)
V
BE(sat)
t
on
t
off
Min
400
300
7
—
500
—
—
—
—
Typ
—
—
—
—
—
—
—
2.0
23
Max
—
—
—
100
—
1.5
2.0
—
—
V
V
µs
µs
Unit
V
V
V
µA
Test conditions
I
C
= 0.1 mA, I
E
= 0
I
C
= 3 A, PW = 50 µs,
f = 50 Hz, L = 10 mH
I
E
= 50 mA, I
C
= 0
V
CE
= 300 V, R
BE
=
∞
V
CE
= 2 V, I
C
= 4 A
I
C
= 4 A, I
B
= 40 mA
I
C
= 4 A, I
B
= 40 mA
I
C
= 4 A, I
B1
= –I
B2
= 40 mA
I
C
= 4 A, I
B1
= –I
B2
= 40 mA
See characteristics curves of 2SD1113(K).
Maximum Collector Dissipation Curve
60
Collector peak current P
C
(W)
40
20
0
50
100
150
Case Temperature T
C
(°C)
2
2SD1141(K)
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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Semiconductor & IC Div.
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Fax: (03) 3270-5109
For further information write to:
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3
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