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2SK1578D

产品描述Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, SPA, 3 PIN
产品类别分立半导体    晶体管   
文件大小119KB,共4页
制造商SANYO
官网地址http://www.semic.sanyo.co.jp/english/index-e.html
下载文档 详细参数 选型对比 全文预览

2SK1578D概述

Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, SPA, 3 PIN

2SK1578D规格参数

参数名称属性值
Objectid1543147213
包装说明IN-LINE, R-PSIP-T3
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
配置SINGLE
最大漏极电流 (ID)0.001 A
FET 技术JUNCTION
JESD-30 代码R-PSIP-T3
元件数量1
端子数量3
工作模式DEPLETION MODE
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式IN-LINE
极性/信道类型N-CHANNEL
最大功率耗散 (Abs)0.1 W
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管应用AMPLIFIER
晶体管元件材料SILICON

文档预览

下载PDF文档
Ordering number:EN4178A
N-Channel Junction FET
2SK1578
Capacitor Microphone Applications
Features
· Especially suited for use in audio, telephone capaci-
tor microphones.
· Excellent voltage characteristics.
· Excellent transient characteristics.
· Adoption of FBET process.
Package Dimensions
unit:mm
2034A
[2SK1578]
4.0
2.2
0.4
0.5
0.6
0.4
1.8
15.0
3.0
0.4
1 2
1.3
3
1.3
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VGDO
IG
ID
PD
Tj
Tstg
Conditions
3.0
3.8nom
1 : Source
2 : Gate
3 : Drain
SANYO : SPA
0.7
0.7
Ratings
–20
10
1
100
150
–55 to +150
Unit
V
mA
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Zero-Gate Votlage Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)GDO IG=–100µA
VGS(off) VDS=5V, ID=1µA
IDSS
| yfs |
Ciss
Crss
VDS=5V, VGS=0
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
Conditions
Ratings
min
–20
–0.2
100*
0.4
1.2
4.1
0.88
–0.6
–1.5
800*
typ
max
Unit
V
V
µA
mS
pF
pF
* : The 2SK1578 is classified by I
DSS
as follows : (unit :
µA)
100
A
170
150
B
240
210
C
350
320
D
480
440
E
800
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61599TH (KT)/72297TS (KOTO)/12094TH (KOTO) 8-7215 No.4178–1/4

2SK1578D相似产品对比

2SK1578D 2SK1578C
描述 Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, SPA, 3 PIN Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, SPA, 3 PIN
包装说明 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
针数 3 3
Reach Compliance Code unknown unknow
ECCN代码 EAR99 EAR99
配置 SINGLE SINGLE
最大漏极电流 (ID) 0.001 A 0.001 A
FET 技术 JUNCTION JUNCTION
JESD-30 代码 R-PSIP-T3 R-PSIP-T3
元件数量 1 1
端子数量 3 3
工作模式 DEPLETION MODE DEPLETION MODE
最高工作温度 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE
极性/信道类型 N-CHANNEL N-CHANNEL
最大功率耗散 (Abs) 0.1 W 0.1 W
认证状态 Not Qualified Not Qualified
表面贴装 NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE
晶体管应用 AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON
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