2SK1540(L), 2SK1540(S)
Silicon N Channel MOS FET
REJ03G0952-0200
(Previous: ADE-208-1292)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
4
4
G
1. Gate
2. Drain
3. Source
4. Drain
S
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
D
1
1
2
3
2
3
Rev.2.00 Sep 07, 2005 page 1 of 7
2SK1540(L), 2SK1540(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at T
C
= 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
Pch*
Tch
2
1
Ratings
450
±30
7
28
7
60
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
Tstg
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
450
±30
—
—
2.0
—
4.0
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.6
6.5
1050
280
40
15
55
95
40
0.95
320
Max
—
—
±10
250
3.0
0.8
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 360 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 4 A, V
GS
= 10 V *
I
D
= 4 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 4 A, V
GS
= 10 V,
R
L
= 7.5
Ω
3
3
I
F
= 7 A, V
GS
= 0
I
F
= 7 A, V
GS
= 0,
di
F
/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 7
2SK1540(L), 2SK1540(S)
Main Characteristics
Power vs. Temperature Derating
80
50
O
is per
Lim at
ite ion
d in
by th
R is A
DS
re
a
(o
n
Maximum Safe Operation Area
Channel Dissipation Pch (W)
20
Drain Current I
D
(A)
60
10
5
2
1.0
0.5
0.2
0.1
D
PW
C
O
pe
ra
10
0
10
µ
s
)
µ
s
=
1
10
(T
m
s
s
(1
sh
ot
)
m
40
tio
n
C
=
)
20
25
°
C
Ta = 25°C
1
3
10
30
100 300
1,000
0
50
100
150
200
0.05
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
10 V
7V
6V
Pulse Test
12
5V
20
Typical Transfer Characteristics
–25°C
V
DS
= 20 V
Pulse Test
T
C
= 25°C
Drain Current I
D
(A)
Drain Current I
D
(A)
16
16
12
75°C
8
8
4
V
GS
= 4 V
0
10
20
30
40
50
4
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
10 A
6
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
V
GS
= 10 V
1.0
0.5
15 V
Drain to Source Saturation Voltage V
DS (on)
(V)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
8
2
4
5A
2
I
D
= 2 A
0.2
0.1
0.05
0.5
0
4
8
12
16
20
1.0
2
5
10
20
50
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 7
2SK1540(L), 2SK1540(S)
Static Drain to Source on State
Resistance vs. Temperature
2.0
V
GS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
50
V
DS
= 20 V
Pulse Test
–25°C
T
C
= 25°C
75°C
1.6
20
10
5
1.2
I
D
= 10 A
0.8
2, 5 A
2
1.0
0.5
0.1
0.4
0
–40
0
40
80
120
160
0.2
0.5
1.0
2
5
10
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
5,000
5,000
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Reverse Recovery Time trr (ns)
Capacitance C (pF)
2,000
1,000
500
200
100
50
0.2
1,000
Ciss
Coss
100
10
5
0.5
1.0
2
5
10
20
0
10
20
Crss
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
500
20
500
Switching Characteristics
V
GS
= 10 V V
DD
= 30 V
PW = 2
µs,
duty < 1%
•
•
400
V
DS
300
V
DD
= 100 V
250 V
400 V
V
GS
16
Switching Time t (ns)
200
100
50
t
d (off)
12
t
f
t
r
t
d (on)
200
I
D
= 7 A
100
V
DD
= 400 V
250 V
100 V
8
16
24
32
40
8
20
10
5
0.2
4
0
0
0.5
1.0
2
5
10
20
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 7
2SK1540(L), 2SK1540(S)
Reverse Drain Current vs.
Source to Drain Voltage
20
Reverse Drain Current I
DR
(A)
16
Pulse Test
12
8
4
5, 10 V
V
GS
= 0, –10 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance
γ
S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
T
C
= 25°C
1.0
D=1
0.5
0.3
0.1
0.2
0.1
0.05
0.02
0.03
θch–c
(t) =
γ
S
(t)
• θch–c
θch–c
= 2.08°C/W, T
C
= 25°C
P
DM
PW
1
D = PW
T
1
0.01
10
µ
0.01
ulse
P
ot
Sh
100
µ
1m
10 m
100 m
T
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Vout Monitor
D.U.T
R
L
Vout
Vin
10 %
Waveforms
90 %
10 %
90 %
tr
90 %
td (off)
10 %
50
Ω
Vin = 10 V
.
V
DD
= 30 V
.
td (on)
tf
Rev.2.00 Sep 07, 2005 page 5 of 7
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