Transistors
2SD1010
Silicon NPN epitaxial planar type
For low-frequency amplification
5.0
±0.2
5.1
±0.2
Unit: mm
4.0
±0.2
■
Features
•
High forward current transfer ratio h
FE
•
Low collector-emitter saturation voltage V
CE(sat)
•
High emitter-base voltage (Collector open) V
EBO
•
Low noise voltage NV
0.7
±0.1
0.7
±0.2
12.9
±0.5
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
50
40
15
50
100
300
150
−55
to
+150
Unit
V
V
2.3
±0.2
0.45
+0.15
–0.1
2.5
+0.6
–0.2
1
2 3
2.5
+0.6
–0.2
0.45
+0.15
–0.1
V
mA
mA
mW
°C
°C
1 : Emitter
2 : Collector
3 : Base
TO-92-B1 Package
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Noise voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
NV
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
20 V, I
B
=
0
V
CE
= 10 V, I
C
= 2 mA
I
C
=
10 mA, I
B
=
1 mA
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
V
CE
= 10 V, I
C
= 1 mA, G
V
= 80 dB
R
g
= 100 kΩ, Function = FLAT
400
0.05
200
80
Min
50
40
15
0.1
1
2 000
0.2
Typ
Max
Unit
V
V
V
µA
µA
V
MHz
mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
R
400 to 800
S
600 to 1 200
T
1 000 to 2 000
Publication date: January 2003
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•
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