Ordering number:ENN2557B
NPN Epitaxial Planar Silicon Transistor
2SC4188
Ultrahigh-Definition CRT Display
Video Output Applications
Features
· High breakdown voltage : V
CEO
≥200V.
· Small reverse transfer capacitance and excellent high
frequency characteristic : C
re
=1.3pF typ.
· Adoption of FBET process.
Package Dimensions
unit:mm
2010C
[2SC4188]
10.2
3.6
5.1
4.5
1.3
2.7
18.0
5.6
1.2
0.8
14.0
15.1
6.3
0.4
1
2
3
2.55
2.55
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collecor-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Tempreature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO220AB
Conditions
2.7
Ratings
200
200
5
100
200
1.5
10
150
–55 to +150
Unit
V
V
V
mA
mA
W
W
˚C
˚C
The 2SC4188 is classified by 10mA h
FE
as follows :
Rank
hFE
C
40 to 80
D
60 to 120
E
100 to 200
F
160 to 320
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72204TN (PC)/82098HA (KT)/5118TA/4217TA, TS No.2557-1/4
2SC4188
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Collector-to-Emitter Saturatin Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
ICBO
IEBO
hFE
fT
Cob
Cre
VCE(sat)
VBE(sat)
VCB=150V, IE=0
VEB=4V, IC=0
VCE=10V, IC=10mA
VCE=30V, IC=10mA
VCB=30V, f=1MHz
VCB=30V, f=1MHz
IC=20mA, IB=2mA
IC=20mA, IB=2mA
200
200
5
40*
150
1.8
1.3
0.6
1.0
Conditions
Ratings
min
typ
max
0.1
0.1
320*
MHz
pF
pF
V
V
V
V
V
Unit
µA
µA
V(BR)CBO IC=10µA, IE=0
V(BR)CEO IC=1mA, RBE=∞
V(BR)EBO
IE=10µA, IC=0
20
18
IC -- VCE
160μA
140μA
10
9
IC -- VCE
80
μ
A
70μA
Collector Current, IC – mA
Collector Current, IC – mA
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
7
6
5
4
3
2
1
120μA
100μA
80μA
60μA
40μA
20μA
IB=0
8
9
10
60μA
50μA
40μA
30μA
20μA
10μA
IB=0
0
10
20
30
40
50
60
70
80
90
100
0
Collector-to-Emitter Voltage, VCE – V
120
ITR06468
5
Collector-to-Emitter Voltage, VCE – V
ITR06469
IC -- VBE
VCE=10V
hFE -- IC
VCE=10V
100
3
2
Collector Current, IC – mA
Ta=75°C
25°C
80
DC Current Gain, hFE
100
7
5
3
2
Ta=75
°
C
25
°
C
40
20
--25
°
C
60
--25
°C
0
0
0.2
0.4
0.6
0.8
1.0
ITR06470
10
5
Base-to-Emitter Voltage, VBE – V
1000
7 1.0
2
3
5
7
10
2
3
5
Collector Current, IC – mA
2
7 100
2
ITR06471
f T -- IC
VCE=30V
Cob -- VCB
f=1MHz
Gain-Bandwidth Product, fT – GHz
7
5
3
2
Output Capacitance, Cob – pF
10
7
5
100
7
5
3
2
3
2
1.0
7
10
5
7 1.0
2
3
5
7
5
Collector Current, IC –mA
10
2
3
5
7 100
2
ITR06472
5
7 1.0
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB -- V
7 100
2
ITR06473
No.2557-2/4
2SC4188
2
Cre -- VCB
f=1MHz
1.0
7
VCE(sat) -- IC
IC / IB=10
Reverse Transfer Capacitance, Cre – pF
10
7
5
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
5
7 1.0
2
3
5
7
2
3
5
7 100
2
5
3
2
3
2
0.1
7
5
3
1.0
7
5
10
5
7
1.0
2
3
5
7
10
2
3
5
7 100
Collector-to-Base Voltage, VCB -- V
10
7
ITR06474
1000
7
5
Collector Current, IC – mA
ITR06475
VBE(sat) -- IC
IC / IB=10
ASO
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
Collector Current, IC – mA
5
3
2
ICP=200mA
IC=100mA
1ms
3
2
50
s
0
μ
100
7
5
3
2
10
7
5
DC
DC
10
op
ms
r
ope
1.0
7
5
3
5
7
1.0
2
3
5
7
10
2
3
5
era
t
ion
Ta
=2
n
atio
5
°
C
Tc=25°C
Single pulse
3
5
7
10
2
3
5
7
100
2
3
5
Collector Current, IC – mA
12
100
ITR06476
7
Collector-to-Emitter Voltage, VCE – V
ITR06477
PC -- Ta
Collector Dissipation, P
C
– W
10
8
6
4
2
1.5
0
0
20
No heat s
ink
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR06478
No.2557-3/4
2SC4188
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2004. Specifications and information herein are subject to
change without notice.
PS No.2557-4/4
嵌入式系统
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