Ordering number : EN3160B
2SC4504
SANYO Semiconductors
DATA SHEET
2SC4504
Features
•
•
•
NPN Epitaxial Planar Silicon Transistor
High-Definition CRT Display
Video Output Driver Applications
High fT (fT=2.2GHz typ).
High current (IC=300mA).
Adoption of FBET process.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on a ceramic board (250mm
✕0.8mm)
2
Conditions
Ratings
30
20
3
300
600
0.5
1.3
150
--55 to +150
Unit
V
V
V
mA
mA
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
Conditions
VCB=20V, IE=0A
VEB=2V, IC=0A
VCE=5V, IC=50mA
VCE=5V, IC=300mA
40*
20
Ratings
min
typ
max
0.1
5.0
200*
Unit
μA
μA
Marking : CM
*:
The 2SC4504 is classified by 50mA hFE as follows:
Rank
hFE
C
40 to 80
D
60 to 120
E
100 to 200
Continued on next page
.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
33110AB TK IM / 92304TN (PC)/D2598HA (KT)/72895MO/6279MO, TS X-6587 No.3160-1/4
2SC4504
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
fT
Cob
Cre
VCE(sat)
VBE(sat)
Conditions
VCE=5V, IC=50mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
IC=100mA, IB=10mA
IC=100mA, IB=10mA
Ratings
min
typ
2.2
2.9
2.6
0.15
0.9
0.5
1.2
max
Unit
GHz
pF
pF
V
V
Package Dimensions
unit : mm (typ)
7007B-004
50
IC -- VCE
500
μ
A
450
μ
A
400
μ
A
200
IC -- VCE
2.0m
A
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
Collector Current, IC -- mA
30
350
μ
A
300
μ
A
250
μ
A
Collector Current, IC -- mA
40
160
120
20
200
μ
A
150μA
80
10
100μA
40
0.4mA
0.2mA
0
0
4
8
50μA
IB=0
μA
12
16
20
ITR07141
0
0
1
2
3
IB=0mA
4
5
ITR07142
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
No.3160-2/4
2SC4504
3
2
hFE -- IC
VCE=5V
5
f T -- IC
VCE=5V
Gain-Brandwidth Product, f T -- GHz
3
2
1.0
7
5
3
2
0.1
7
5
3
2
DC Current Gain, hFE
100
7
5
3
2
10
7
5
3
5
7
10
2
3
5
7 100
2
3
Collector Current, IC -- mA
2
5 7 1000
ITR07143
10
5
7 1.0
2
3
5 7 10
2
3
5 7 100
2
3
5
VCE(sat) -- IC
Collector Current, IC -- mA
ITR07144
Cob, Cre -- VCB
IC / IB=10
f=1MHz
7
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
1.0
7
5
Cob, Cre -- pF
5
3
2
Cob
3
Cre
0.1
7
5
3
3
5
7
10
2
3
5
7
100
2
3
5
2
1.0
7
1.0
2
3
5
7
10
2
3
5
Collector Current, IC -- mA
ITR07145
0.6
Collector-to-Base Voltage, VCB -- V
ITR07146
ASO
1000
7
5
PC -- Ta
ICP=600mA
10
Collector Current, IC -- mA
3
2
IC=300mA
DC operation
Ta=25
°
C
Collector Dissipation, PC -- W
1m
s
0.5
m
s
0.4
N
0.3
o
100
7
5
3
2
he
a
ts
in
k
0.2
0.1
10
5
7
--1.0
2
3
5
7
--10
2
3
0
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE -- V
1.4
1.3
ITR07147
Ambient Temperature, Ta --
°C
ITR07148
PC -- Ta
M
Collector Dissipation, PC -- W
1.2
ou
1.0
nt
ed
on
ac
0.8
er
am
ic
0.6
bo
ar
d
(2
50
m
0.4
0.2
0
0
20
40
60
80
100
m
2
✕
0.
8m
m
)
120
140
160
Ambient Temperature, Ta --
°C
ITR07149
No.3160-3/4
2SC4504
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of March, 2010. Specifications and information herein are subject
to change without notice.
PS No.3160-4/4
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