2SD1277R: 产品描述Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3; 产品类别分立半导体晶体管; 文件大小80KB，共3页; 制造商Panasonic(松下); 官网地址http://www.panasonic.co.jp/semicon/e-index.html; 标准

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2SD1277R概述

Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3

2SD1277R规格参数

参数名称	属性值
是否Rohs认证	符合
零件包装代码	TO-220AB
包装说明	FLANGE MOUNT, R-PSFM-T3
针数	3
Reach Compliance Code	unknow
ECCN代码	EAR99
外壳连接	ISOLATED
最大集电极电流 (IC)	8 A
集电极-发射极最大电压	60 V
配置	DARLINGTON WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	1000
JEDEC-95代码	TO-220AB
JESD-30 代码	R-PSFM-T3
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	NPN
最大功率耗散 (Abs)	2 W
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	20 MHz
Base Number Matches	1

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Power Transistors

2SD1277, 2SD1277A

Silicon NPN triple diffusion planar type darlington

Unit: mm

0.7

±0.1

For midium speed power switching

Complementary to 2SB0951, 2SB0951A

16.7

±0.3

10.0

±0.2

5.5

±0.2

4.2

±0.2

4.2

±0.2

2.7

±0.2

■

Features

•

High forward current transfer ratio h

•

High-speed switching

•

Full-pack package which can be installed to the heat sink with one screw

7.5

±0.2

3.1

±0.1

■

Absolute Maximum Ratings

25°C

Parameter

Collector-base voltage

(Emitter open)

2SD1277

2SD1277A

CEO

EBO

25°C

stg

Symbol

CBO

Rating

2.0

150

−55

+150

°C

Unit

Solder Dip

(4.0)

1.4

±0.1

1.3

±0.2

0.5

+0.2

–0.1

14.0

±0.5

0.8

±0.1

2.54

±0.3

5.08

±0.5

Collector-emitter voltage 2SD1277

(Base open)

2SD1277A

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power

dissipation

Junction temperature

Storage temperature

1 2 3

1: Base

2: Collector

3: Emitter

EIAJ: SC-67

TO-220F-A1 Package

Internal Connection

■

Electrical Characteristics

25°C

3°C

Parameter

Collector-emitter voltage

(Base open)

Collector-base cutoff

current (Emitter open)

2SD1277

2SD1277A

2SD1277

2SD1277A

EBO

FE1 *

FE2

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

2. *: Rank classification

Rank

FE1

1 000 to 2 500

CE(sat)

BE(sat)

stg

CBO

60 V, I

80 V, I

7 V, I

3 V, I

4 A

3 V, I

8 A

4 A, I

8 mA

4 A, I

8 mA

10 V, I

0.5 A, f

1 MHz

2 A, I

8 mA, I

= −8

mA,

50 V

0.5

4.0

1.0

1 000

500

1.5

2.0

MHz

µs

Symbol

CEO

Conditions

30 mA, I

Min

100

10 000



µA

Typ

Max

Unit

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2 000 to 5 000 4 000 to 10 000

SJD00191BED

Publication date: February 2003

Request for your special attention and precautions in using the technical information

and semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Government

if any of the products or technologies described in this material and controlled under the "Foreign

Exchange and Foreign Trade Law" is to be exported or taken out of Japan.

(2) The technical information described in this material is limited to showing representative characteris-

tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-

tual property right or any other rights owned by our company or a third party, nor grants any license.

(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the

product or technologies as described in this material.

(4) The products described in this material are intended to be used for standard applications or general

electronic equipment (such as office equipment, communications equipment, measuring instru-

ments and household appliances).

Consult our sales staff in advance for information on the following applications:

•

Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,

combustion equipment, life support systems and safety devices) in which exceptional quality and

reliability are required, or if the failure or malfunction of the products may directly jeopardize life or

harm the human body.

•

Any applications other than the standard applications intended.

(5) The products and product specifications described in this material are subject to change without

notice for modification and/or improvement. At the final stage of your design, purchasing, or use of

the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that

the latest specifications satisfy your requirements.

(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-

mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-

wise, we will not be liable for any defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of

incidence of break down and failure mode, possible to occur to semiconductor products. Measures

on the systems such as redundant design, arresting the spread of fire or preventing glitch are

recommended in order to prevent physical injury, fire, social damages, for example, by using the

products.

(7) When using products for which damp-proof packing is required, observe the conditions (including

shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets

are individually exchanged.

(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written

permission of Matsushita Electric Industrial Co., Ltd.

2002 JUL

2SD1277R相似产品对比

	2SD1277R	2SD1277AQ	2SD1277Q	2SD1277P	2SD1277AR
描述	Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3	Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3	Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3	Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3	Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3
是否Rohs认证	符合	符合	符合	符合	符合
零件包装代码	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
包装说明	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
针数	3	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
最大集电极电流 (IC)	8 A	8 A	8 A	8 A	8 A
集电极-发射极最大电压	60 V	80 V	60 V	60 V	80 V
配置	DARLINGTON WITH BUILT-IN RESISTOR	DARLINGTON WITH BUILT-IN RESISTOR	DARLINGTON WITH BUILT-IN RESISTOR	DARLINGTON WITH BUILT-IN RESISTOR	DARLINGTON WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	1000	2000	2000	4000	1000
JEDEC-95代码	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
元件数量	1	1	1	1	1
端子数量	3	3	3	3	3
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	NPN	NPN	NPN	NPN	NPN
最大功率耗散 (Abs)	2 W	2 W	2 W	2 W	2 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	20 MHz	20 MHz	20 MHz	20 MHz	20 MHz
Base Number Matches	1	1	1	1	1

2SD1277R

2SD1277R概述

2SD1277R规格参数

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