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2SD1251AQ: 产品描述Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, N TYPE PACKAGE-3; 产品类别分立半导体晶体管; 文件大小81KB，共3页; 制造商Panasonic(松下); 官网地址http://www.panasonic.co.jp/semicon/e-index.html

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2SD1251AQ概述

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, N TYPE PACKAGE-3

	2SD1251AQ	2SD1251AO	2SD1251AP
描述	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, N TYPE PACKAGE-3	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, N TYPE PACKAGE-3	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, N TYPE PACKAGE-3
包装说明	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
针数	3	3	3
Reach Compliance Code	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99
最大集电极电流 (IC)	4 A	4 A	4 A
集电极-发射极最大电压	80 V	80 V	80 V
配置	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	30	80	50
JESD-30 代码	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3
元件数量	1	1	1
端子数量	3	3	3
最高工作温度	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	IN-LINE	IN-LINE
极性/信道类型	NPN	NPN	NPN
最大功率耗散 (Abs)	1.3 W	1.3 W	1.3 W
认证状态	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON
标称过渡频率 (fT)	1 MHz	1 MHz	1 MHz
Base Number Matches	1	1	1

器件捷径: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ