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2SB1205TP

产品描述Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN
产品类别分立半导体    晶体管   
文件大小94KB,共4页
制造商SANYO
官网地址http://www.semic.sanyo.co.jp/english/index-e.html
下载文档 详细参数 选型对比 全文预览

2SB1205TP概述

Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN

2SB1205TP规格参数

参数名称属性值
Objectid1544597445
包装说明IN-LINE, R-PSIP-T3
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
外壳连接COLLECTOR
最大集电极电流 (IC)5 A
集电极-发射极最大电压20 V
配置SINGLE
最小直流电流增益 (hFE)60
JESD-30 代码R-PSIP-T3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式IN-LINE
极性/信道类型PNP
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)320 MHz

2SB1205TP相似产品对比

2SB1205TP 2SB1205RTP 2SB1205RTP-FA 2SB1205TTP-FA 2SB1205TTP 2SB1205TP-FA 2SB1205STP-FA 2SB1205STP
描述 Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 3 PIN Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 3 PIN Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 3 PIN Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 3 PIN Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN
包装说明 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
针数 3 3 3 3 3 3 3 3
Reach Compliance Code unknown unknow unknow unknow unknow unknow unknow unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
外壳连接 COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
最大集电极电流 (IC) 5 A 5 A 5 A 5 A 5 A 5 A 5 A 5 A
集电极-发射极最大电压 20 V 20 V 20 V 20 V 20 V 20 V 20 V 20 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 60 100 100 200 200 60 140 140
JESD-30 代码 R-PSIP-T3 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSIP-T3
元件数量 1 1 1 1 1 1 1 1
端子数量 3 3 2 2 3 2 2 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE IN-LINE SMALL OUTLINE SMALL OUTLINE IN-LINE
极性/信道类型 PNP PNP PNP PNP PNP PNP PNP PNP
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO YES YES NO YES YES NO
端子形式 THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 320 MHz 320 MHz 320 MHz 320 MHz 320 MHz 320 MHz 320 MHz 320 MHz
最大功率耗散 (Abs) - 10 W 10 W 10 W 10 W - 10 W 10 W
Base Number Matches - 1 1 1 1 1 1 1

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