SOT-23 Plastic-Encapsulate Transistors
SOT-23
FMMT491
FEATURES
Power dissipation
P
CM:
TRANSISTOR (NPN)
1.
BASE
2.
EMITTER
3.
COLLECTOR
1.0
0.5
W (Tamb=25℃)
0.95
2.4
1.3
Collector current
I
CM:
1
A
Collector-base voltage
V
(BR)CBO
:
80
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
MARKING:491
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
1
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
1
DC current gain
h
FE(3)
1
h
FE(4)
1
V
CE(sat)1
1
Collector-emitter saturation voltage
V
CE(sat)2
1
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
1
2.9
1.9
0.95
Unit: mm
unless
Test
otherwise
conditions
specified)
MIN
TYP
MAX
UNIT
V
V
V
Ic=
100
µA, I
E
=0
Ic=
10
mA, I
B
=0
I
E
=
100
µA, I
C
=0
V
CB
=
60
V, I
E
=0
V
EB
=
4
V, I
C
=0
V
CE
=
5
V, I
C
=
1
mA
V
CE
=
5
V, I
C
=
500
mA
V
CE
=
5
V, I
C
=
1
A
V
CE
=
5
V, I
C
=2A
I
C
=
500
mA, I
B
=
50
mA
I
C
=
1
A, I
B
=
100
mA
I
C
=
1
A, I
B
=
100
mA
V
CE
=
5
V, I
C
=
1
A
V
CE
=
10
V, I
C
=
50
mA, f=
100
MHz
V
CB
=
10
V, f=
1
MHz
80
60
5
0.1
0.1
100
100
80
30
0.25
0.5
1.1
0.4
µA
µA
300
V
V
V
V
MHz
V
BE(sat)
1
V
BE
1
1
150
10
f
T
C
ob
pF
Measured under pulsed conditions, Pulse width=300µs, Duty cycle≤2%.
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