Philips Semiconductors
Product specification
2-input AND gate
FEATURES
•
Symmetrical output impedance
•
High noise immunity
•
ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
– CDM EIA/JESD22-C101 exceeds 1000 V.
•
Low power dissipation
•
Balanced propagation delays
•
Very small 5-pin package
•
Output capability: standard
•
Specified from
−40
to +125
°C.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
3.0 ns.
74AHC1G08; 74AHCT1G08
DESCRIPTION
The 74AHC1G/AHCT1G08 is a high-speed Si-gate CMOS
device.
The 74AHC1G/AHCT1G08 provides the 2-input AND
function.
TYPICAL
SYMBOL
t
PHL
/t
PLH
C
I
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
+ (C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
2. The condition is V
I
= GND to V
CC
.
PARAMETER
propagation delay A and B to Y
input capacitance
power dissipation capacitance
C
L
= 50 pF; f = 1 MHz;
notes 1 and 2
CONDITIONS
AHC1G
C
L
= 15 pF; V
CC
= 5 V
3.2
1.5
17
AHCT1G
3.6
1.5
19
ns
pF
pF
UNIT
2002 Jun 06
2
Philips Semiconductors
Product specification
2-input AND gate
74AHC1G08; 74AHCT1G08
handbook, halfpage
1
2
handbook, halfpage
&
A
4
Y
MNA114
B
MNA221
Fig.3 IEC logic symbol.
Fig.4 Logic diagram.
RECOMMENDED OPERATING CONDITIONS
74AHC1G
SYMBOL
V
CC
V
I
V
O
T
amb
PARAMETER
supply voltage
input voltage
output voltage
ambient temperature
see DC and AC
characteristics per
device
V
CC
= 3.3
±0.3
V
V
CC
= 5
±0.5
V
CONDITIONS
MIN.
2.0
0
0
−40
TYP.
5.0
−
−
+25
MAX.
5.5
5.5
V
CC
+125
MIN.
4.5
0
0
−40
TYP.
5.0
−
−
+25
MAX.
5.5
5.5
V
CC
+125
V
V
V
°C
74AHCT1G
UNIT
t
r
, t
f
(∆t/∆f)
input rise and fall
times
−
−
−
−
100
20
−
−
−
−
−
20
ns/V
ns/V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
PARAMETER
supply voltage
input voltage
input diode current
output diode current
output source or sink current
V
CC
or GND current
storage temperature
power dissipation per package
for temperature range from
−40
to +125
°C
V
I
<
−0.5
V
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V; note 1
−0.5
V < V
O
< V
CC
+ 0.5 V
CONDITIONS
MIN.
−0.5
−0.5
−
−
−
−
−65
−
MAX.
+7.0
+7.0
−20
±20
±25
±75
+150
250
UNIT
V
V
mA
mA
mA
mA
°C
mW
2002 Jun 06
4
嵌入式系统
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