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KSA1220: 产品描述Power Bipolar Transistor, 1.2A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin; 产品类别分立半导体晶体管; 文件大小119KB，共3页; 制造商SAMSUNG(三星); 官网地址http://www.samsung.com/Products/Semiconductor/

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KSA1220概述

Power Bipolar Transistor, 1.2A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

KSA1220规格参数

参数名称	属性值
厂商名称	SAMSUNG(三星)
包装说明	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN代码	EAR99
外壳连接	ISOLATED
最大集电极电流 (IC)	1.2 A
集电极-发射极最大电压	120 V
配置	SINGLE
最小直流电流增益 (hFE)	60
JEDEC-95代码	TO-126
JESD-30 代码	R-PSFM-T3
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	PNP
最大功率耗散 (Abs)	20 W
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	175 MHz

KSA1220相似产品对比

	KSA1220	KSA1220-O	KSA1220A-O	KSA1220A	KSA1220A-Y	KSA1220-Y	KSA1220A-R	KSA1220-R
描述	Power Bipolar Transistor, 1.2A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 1.2A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 1.2A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 1.2A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 1.2A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 1.2A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 1.2A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 1.2A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
包装说明	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
最大集电极电流 (IC)	1.2 A	1.2 A	1.2 A	1.2 A	1.2 A	1.2 A	1.2 A	1.2 A
集电极-发射极最大电压	120 V	120 V	160 V	160 V	160 V	120 V	160 V	120 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	60	100	100	60	160	160	60	60
JEDEC-95代码	TO-126	TO-126	TO-126	TO-126	TO-126	TO-126	TO-126	TO-126
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
元件数量	1	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3	3
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	175 MHz	175 MHz	175 MHz	175 MHz	175 MHz	175 MHz	175 MHz	175 MHz
厂商名称	SAMSUNG(三星)	-	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)
功耗环境最大值	-	20 W	20 W	-	20 W	20 W	20 W	20 W
VCEsat-Max	-	0.7 V	0.7 V	-	0.7 V	0.7 V	0.7 V	0.7 V

KSA1220

KSA1220概述

KSA1220规格参数

KSA1220相似产品对比

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