RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
| 参数名称 | 属性值 |
| 厂商名称 | California Eastern Labs |
| 包装说明 | SMALL OUTLINE, R-PDSO-G4 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | LOW NOISE |
| 外壳连接 | SOURCE |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 10 V |
| 最大漏极电流 (ID) | 0.08 A |
| FET 技术 | METAL SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 0.035 pF |
| 最高频带 | ULTRA HIGH FREQUENCY BAND |
| JESD-30 代码 | R-PDSO-G4 |
| 元件数量 | 1 |
| 端子数量 | 4 |
| 工作模式 | DUAL GATE, DEPLETION MODE |
| 最高工作温度 | 125 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL |
| 最小功率增益 (Gp) | 16 dB |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | GALLIUM ARSENIDE |
| NE25339T1U79 | NE25339U76 | NE25339T1U77 | NE25339T1U76 | NE25339T1U78 | NE25339U79 | NE25339U77 | NE25339U78 | |
|---|---|---|---|---|---|---|---|---|
| 描述 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET |
| 厂商名称 | California Eastern Labs | California Eastern Labs | California Eastern Labs | California Eastern Labs | California Eastern Labs | California Eastern Labs | California Eastern Labs | California Eastern Labs |
| 包装说明 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
| 外壳连接 | SOURCE | SOURCE | SOURCE | SOURCE | SOURCE | SOURCE | SOURCE | SOURCE |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小漏源击穿电压 | 10 V | 10 V | 10 V | 10 V | 10 V | 10 V | 10 V | 10 V |
| 最大漏极电流 (ID) | 0.08 A | 0.025 A | 0.035 A | 0.025 A | 0.05 A | 0.08 A | 0.035 A | 0.05 A |
| FET 技术 | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 0.035 pF | 0.035 pF | 0.035 pF | 0.035 pF | 0.035 pF | 0.035 pF | 0.035 pF | 0.035 pF |
| 最高频带 | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND |
| JESD-30 代码 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| 工作模式 | DUAL GATE, DEPLETION MODE | DUAL GATE, DEPLETION MODE | DUAL GATE, DEPLETION MODE | DUAL GATE, DEPLETION MODE | DUAL GATE, DEPLETION MODE | DUAL GATE, DEPLETION MODE | DUAL GATE, DEPLETION MODE | DUAL GATE, DEPLETION MODE |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最小功率增益 (Gp) | 16 dB | 16 dB | 16 dB | 16 dB | 16 dB | 16 dB | 16 dB | 16 dB |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
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