Datasheet> 器件分类 > 分立半导体> 晶体管> NE25339U76

NE25339U76: 产品描述RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET; 产品类别分立半导体晶体管; 文件大小97KB，共6页; 制造商California Eastern Labs; 官网地址http://www.cel.com/

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NE25339U76概述

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

NE25339U76规格参数

参数名称	属性值
厂商名称	California Eastern Labs
包装说明	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN代码	EAR99
其他特性	LOW NOISE
外壳连接	SOURCE
配置	SINGLE
最小漏源击穿电压	10 V
最大漏极电流 (ID)	0.025 A
FET 技术	METAL SEMICONDUCTOR
最大反馈电容 (Crss)	0.035 pF
最高频带	ULTRA HIGH FREQUENCY BAND
JESD-30 代码	R-PDSO-G4
元件数量	1
端子数量	4
工作模式	DUAL GATE, DEPLETION MODE
最高工作温度	125 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	N-CHANNEL
最小功率增益 (Gp)	16 dB
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	AMPLIFIER
晶体管元件材料	GALLIUM ARSENIDE

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NE25339U76相似产品对比

	NE25339U76	NE25339T1U77	NE25339T1U79	NE25339T1U76	NE25339T1U78	NE25339U79	NE25339U77	NE25339U78
描述	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
厂商名称	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs
包装说明	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
外壳连接	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小漏源击穿电压	10 V	10 V	10 V	10 V	10 V	10 V	10 V	10 V
最大漏极电流 (ID)	0.025 A	0.035 A	0.08 A	0.025 A	0.05 A	0.08 A	0.035 A	0.05 A
FET 技术	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR
最大反馈电容 (Crss)	0.035 pF	0.035 pF	0.035 pF	0.035 pF	0.035 pF	0.035 pF	0.035 pF	0.035 pF
最高频带	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 代码	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
元件数量	1	1	1	1	1	1	1	1
端子数量	4	4	4	4	4	4	4	4
工作模式	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最小功率增益 (Gp)	16 dB	16 dB	16 dB	16 dB	16 dB	16 dB	16 dB	16 dB
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE

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