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MMBT6428LT1,
MMBT6429LT1
Amplifier Transistors
NPN Silicon
Features
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COLLECTOR
3
1
BASE
•
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter−Base Voltage
Collector Current
−
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
6428LT1
50
60
6.0
200
6429LT1
45
55
Unit
Vdc
Vdc
Vdc
mAdc
1
2
3
2
EMITTER
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
SOT−23 (TO−236)
CASE 318
STYLE 6
THERMAL CHARACTERISTICS
Rating
Total Device Dissipation FR− 5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Value
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
−55
to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
MARKING DIAGRAM
XXX MG
G
1
XXX = Specific Device Code
MMBT6428LT1
−
1KM
MMBT6429LT1
−
M1L
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
ORDERING INFORMATION
Device
MMBT6428LT1G
MMBT6429LT1
MMBT6429LT1G
Package
SOT−23
(Pb−Free)
SOT−23
SOT−23
(Pb−Free)
Shipping
†
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2008
May, 2008
−
Rev. 4
1
Publication Order Number:
MMBT6428LT1/D
MMBT6428LT1, MMBT6429LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage
(I
C
= 0.1 mAdc, I
E
= 0)
(I
C
= 0.1 mAdc, I
E
= 0)
Collector Cutoff Current
(V
CE
= 30 Vdc)
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 5.0 Vdc, I
C
= 0)
MMBT6428
MMBT6429
MMBT6428
MMBT6429
V
(BR)CEO
Vdc
50
45
60
55
−
−
−
−
−
Vdc
−
−
0.1
0.01
0.01
mAdc
mAdc
mAdc
V
(BR)CBO
I
CES
I
CBO
I
EBO
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.01 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 0.1 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
Collector
−Emitter
Saturation Voltage
(I
C
= 10 mAdc, I
B
= 0.5 mAdc)
(I
C
= 100 mAdc, I
B
= 5.0 mAdc)
Base
−Emitter
On Voltage
(I
C
= 1.0 mAdc, V
CE
= 5.0 mAdc)
MMBT6428
MMBT6429
MMBT6428
MMBT6429
MMBT6428
MMBT6429
MMBT6428
MMBT6429
V
CE(sat)
h
FE
−
250
500
250
500
250
500
250
500
−
−
0.56
−
−
650
1250
−
−
−
−
Vdc
0.2
0.6
Vdc
0.66
V
BE(on)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
f
T
C
obo
C
ibo
MHz
100
−
−
700
pF
3.0
pF
8.0
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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2
MMBT6428LT1, MMBT6429LT1
NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
NOISE VOLTAGE
30
BANDWIDTH = 1.0 Hz
20
en , NOISE VOLTAGE (nV)
en , NOISE VOLTAGE (nV)
I
C
= 10 mA
3.0 mA
1.0 mA
R
S
≈
0
20
R
S
≈
0
f = 10 Hz
10
7.0
10 kHz
5.0
1.0 kHz
100 Hz
30
BANDWIDTH = 1.0 Hz
10
7.0
5.0
300
mA
3.0
10
20
50 100 200
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
3.0
0.01 0.02
0.05 0.1 0.2
0.5 1.0 2.0
I
C
, COLLECTOR CURRENT (mA)
100 kHz
5.0
10
Figure 2. Effects of Frequency
10
7.0
5.0
In, NOISE CURRENT (pA)
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
R
S
≈
0
20
10
mA
50 100 200
3.0 mA
1.0 mA
300
mA
100
mA
30
mA
0
10
20
20
16
NF, NOISE FIGURE (dB)
Figure 3. Effects of Collector Current
BANDWIDTH = 1.0 Hz
I
C
= 10 mA
BANDWIDTH = 10 Hz to 15.7 kHz
12
500
mA
100
mA
4.0
10
mA
I
C
= 1.0 mA
8.0
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
50 100 200 500 1 k 2 k
5 k 10 k 20 k 50 k 100 k
R
S
, SOURCE RESISTANCE (OHMS)
Figure 4. Noise Current
100 Hz NOISE DATA
300
200
VT, TOTAL NOISE VOLTAGE (nV)
100
70
50
30
20
10
7.0
5.0
3.0
10
20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
R
S
, SOURCE RESISTANCE (OHMS)
20
BANDWIDTH = 1.0 Hz
100
mA
3.0 mA
1.0 mA
300
mA
30
mA
10
mA
I
C
= 10 mA
16
NF, NOISE FIGURE (dB)
Figure 5. Wideband Noise Figure
I
C
= 10 mA
3.0 mA
1.0 mA
300
mA
12
8.0
100
mA
4.0
BANDWIDTH = 1.0 Hz
0
10
20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
R
S
, SOURCE RESISTANCE (OHMS)
30
mA
10
mA
Figure 6. Total Noise Voltage
Figure 7. Noise Figure
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3
MMBT6428LT1, MMBT6429LT1
h FE, DC CURRENT GAIN (NORMALIZED)
4.0
3.0
V
CE
= 5.0 V
2.0
T
A
= 125°C
25°C
1.0
0.7
0.5
0.4
0.3
0.2
0.01
- 55°C
0.02
0.03
0.05
0.1
0.2
0.3
0.5
I
C
, COLLECTOR CURRENT (mA)
1.0
2.0
3.0
5.0
10
Figure 8. DC Current Gain
1.0
T
J
= 25°C
0.8
V, VOLTAGE (VOLTS)
R
θ
VBE, BASE-EMITTER
TEMPERATURE COEFFICIENT (mV/
°
C)
- 0.4
- 0.8
0.6
V
BE
@ V
CE
= 5.0 V
- 1.2
0.4
- 1.6
T
J
= 25°C to 125°C
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
I
C
, COLLECTOR CURRENT (mA)
- 2.0
- 55°C to 25°C
- 2.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
I
C
, COLLECTOR CURRENT (mA)
50
100
20
50
100
Figure 9. “On” Voltages
f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
Figure 10. Temperature Coefficients
8.0
6.0
C, CAPACITANCE (pF)
4.0
3.0
2.0
C
ob
C
cb
C
eb
C
ib
T
J
= 25°C
500
300
200
100
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (mA)
50 70 100
V
CE
= 5.0 V
T
J
= 25°C
1.0
0.8
0.1
0.2
5.0
0.5 1.0 2.0
10
20
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
Figure 11. Capacitance
Figure 12. Current−Gain — Bandwidth Product
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