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27LV256-25I/SO: 产品描述32K X 8 OTPROM, 250 ns, PDSO28, 0.300 INCH, PLASTIC, SOIC-28; 产品类别存储存储; 文件大小79KB，共13页; 制造商Microchip(微芯科技); 官网地址https://www.microchip.com

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27LV256-25I/SO概述

32K X 8 OTPROM, 250 ns, PDSO28, 0.300 INCH, PLASTIC, SOIC-28

27LV256-25I/SO规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
零件包装代码	SOIC
包装说明	0.300 INCH, PLASTIC, SOIC-28
针数	28
Reach Compliance Code	_compli
ECCN代码	EAR99
最长访问时间	250 ns
其他特性	DATA RETENTION >200 YEARS
I/O 类型	COMMON
JESD-30 代码	R-PDSO-G28
JESD-609代码	e0
长度	17.87 mm
内存密度	262144 bi
内存集成电路类型	OTP ROM
内存宽度	8
功能数量	1
端子数量	28
字数	32768 words
字数代码	32000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	32KX8
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	SOP
封装等效代码	SOP28,.4
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	3.3/5 V
编程电压	13 V
认证状态	Not Qualified
座面最大高度	2.64 mm
最大待机电流	0.0001 A
最大压摆率	0.025 mA
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子节距	1.27 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	7.49 mm
Base Number Matches	1

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27LV256

256K (32K x 8) Low-Voltage CMOS EPROM

FEATURES

• Wide voltage range 3.0V to 5.5V

• High speed performance

- 200 ns access time available at 3.0V

• CMOS Technology for low power consumption

- 8 mA Active current at 3.0V

- 20 mA Active current at 5.5V

- 100

A Standby current

• Factory programming available

• Auto-insertion-compatible plastic packages

• Auto ID aids automated programming

• Separate chip enable and output enable controls

• High speed “Express” programming algorithm

• Organized 32K x 8: JEDEC standard pinouts

- 28-pin Dual-in-line package

- 32-pin PLCC package

- 28-pin SOIC package

- Tape and reel

• Data Retention > 200 years

• Available for the following temperature ranges:

- Commercial:

0˚C to +70˚C

- Industrial:

-40˚C to +85˚C

PACKAGE TYPES

PDIP

A12

•1

A14

A13

A11

A10

27LV256

A12

Vcc

A14

A13

PLCC

A11

A10

SOIC

A12

A14

A13

A11

A10

DESCRIPTION

The Microchip Technology Inc. 27LV256 is a low volt-

age (3.0 volt) CMOS EPROM designed for battery pow-

ered applications. The device is organized as a 32K x

8 (32K-Byte) non-volatile memory product. The

27LV256 consumes only 8 mA maximum of active cur-

rent during a 3.0 volt read operation therefore improv-

ing battery performance. This device is designed for

very low voltage applications where conventional 5.0

volt only EPROMS can not be used. Accessing individ-

ual bytes from an address transition or from power-up

(chip enable pin going low) is accomplished in less than

200 ns at 3.0V. This device allows systems designers

the ability to use low voltage non-volatile memory with

today’s' low voltage microprocessors and peripherals in

battery powered applications.

A complete family of packages is offered to provide the

most ﬂexibility in applications. For surface mount appli-

cations, PLCC or SOIC packaging is available. Tape

and reel packaging is also available for PLCC or SOIC

packages.

1998 Microchip Technology Inc.

27LV256

DS11020G-page 1

27LV256-25I/SO相似产品对比

	27LV256-25I/SO	27LV256-20I/SO	27LV256-25/P	27LV256-25/SO	27LV256-25I/P	27LV256-25/L	27LV256-20I/P	27LV256-20/L
描述	32K X 8 OTPROM, 250 ns, PDSO28, 0.300 INCH, PLASTIC, SOIC-28	32K X 8 OTPROM, 200 ns, PDSO28, 0.300 INCH, PLASTIC, SOIC-28	32K X 8 OTPROM, 250 ns, PDIP28, 0.600 INCH, PLASTIC, DIP-28	32K X 8 OTPROM, 250 ns, PDSO28, 0.300 INCH, PLASTIC, SOIC-28	32K X 8 OTPROM, 250 ns, PDIP28, 0.600 INCH, PLASTIC, DIP-28	32K X 8 OTPROM, 250 ns, PQCC32, PLASTIC, LCC-32	32K X 8 OTPROM, 200 ns, PDIP28, 0.600 INCH, PLASTIC, DIP-28	32K X 8 OTPROM, 200 ns, PQCC32, PLASTIC, LCC-32
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
零件包装代码	SOIC	SOIC	DIP	SOIC	DIP	QFJ	DIP	QFJ
包装说明	0.300 INCH, PLASTIC, SOIC-28	0.300 INCH, PLASTIC, SOIC-28	0.600 INCH, PLASTIC, DIP-28	0.300 INCH, PLASTIC, SOIC-28	0.600 INCH, PLASTIC, DIP-28	PLASTIC, LCC-32	0.600 INCH, PLASTIC, DIP-28	PLASTIC, LCC-32
针数	28	28	28	28	28	32	28	32
Reach Compliance Code	_compli	_compli	_compli	_compli	_compli	_compli	_compli	_compli
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	250 ns	200 ns	250 ns	250 ns	250 ns	250 ns	200 ns	200 ns
其他特性	DATA RETENTION >200 YEARS	DATA RETENTION >200 YEARS	DATA RETENTION >200 YEARS	DATA RETENTION >200 YEARS	DATA RETENTION >200 YEARS	DATA RETENTION >200 YEARS	DATA RETENTION >200 YEARS	DATA RETENTION >200 YEARS
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PDSO-G28	R-PDSO-G28	R-PDIP-T28	R-PDSO-G28	R-PDIP-T28	R-PQCC-J32	R-PDIP-T28	R-PQCC-J32
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0
长度	17.87 mm	17.87 mm	36.32 mm	17.87 mm	36.32 mm	13.97 mm	36.32 mm	13.97 mm
内存密度	262144 bi	262144 bi	262144 bi	262144 bi	262144 bi	262144 bi	262144 bi	262144 bi
内存集成电路类型	OTP ROM	OTP ROM	OTP ROM	OTP ROM	OTP ROM	OTP ROM	OTP ROM	OTP ROM
内存宽度	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1
端子数量	28	28	28	28	28	32	28	32
字数	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words
字数代码	32000	32000	32000	32000	32000	32000	32000	32000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	70 °C	70 °C	85 °C	70 °C	85 °C	70 °C
组织	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	SOP	SOP	DIP	SOP	DIP	QCCJ	DIP	QCCJ
封装等效代码	SOP28,.4	SOP28,.4	DIP28,.6	SOP28,.4	DIP28,.6	LDCC32,.5X.6	DIP28,.6	LDCC32,.5X.6
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	IN-LINE	CHIP CARRIER	IN-LINE	CHIP CARRIER
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
电源	3.3/5 V	3.3/5 V	3.3/5 V	3.3/5 V	3.3/5 V	3.3/5 V	3.3/5 V	3.3/5 V
编程电压	13 V	13 V	13 V	13 V	13 V	13 V	13 V	13 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	2.64 mm	2.64 mm	4.83 mm	2.64 mm	4.83 mm	3.56 mm	4.83 mm	3.56 mm
最大待机电流	0.0001 A	0.0001 A	0.0001 A	0.0001 A	0.0001 A	0.0001 A	0.0001 A	0.0001 A
最大压摆率	0.025 mA	0.025 mA	0.02 mA	0.02 mA	0.025 mA	0.02 mA	0.025 mA	0.02 mA
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	YES	NO	YES	NO	YES	NO	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	GULL WING	GULL WING	THROUGH-HOLE	GULL WING	THROUGH-HOLE	J BEND	THROUGH-HOLE	J BEND
端子节距	1.27 mm	1.27 mm	2.54 mm	1.27 mm	2.54 mm	1.27 mm	2.54 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	QUAD	DUAL	QUAD
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	7.49 mm	7.49 mm	15.24 mm	7.49 mm	15.24 mm	11.43 mm	15.24 mm	11.43 mm
Base Number Matches	1	1	1	1	1	1	1	1

27LV256-25I/SO

27LV256-25I/SO概述

27LV256-25I/SO规格参数

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