MA5114
MA5114
Radiation hard 1024x4 Bit Static RAM
Replaces June 1999 version, DS3591-4.0
DS3591-5.0 January 2000
The MA5114 4k Static RAM is configured as 1024 x 4 bits and
manufactured using CMOS-SOS high performance, radiation hard,
3µm technology.
The design uses a 6 transistor cell and has full static operation with
no clock or timing strobe required. Address input buffers are deselected
when Chip Select is in the HIGH state.
Operation Mode
Read
Write
Standby
CS
L
L
H
WE
H
L
X
I/O
D OUT
D IN
High Z
ISB2
Power
ISB1
FEATURES
s
3µm CMOS-SOS Technology
s
Latch-up Free
s
Fast Access Time 90ns Typical
s
Total Dose 10
6
Rad(Si)
s
Transient Upset >10
10
Rad(Si)/sec
s
SEU <10
-10
Errors/bitday
s
Single 5V Supply
s
Three State Output
s
Low Standby Current 50µA Typical
s
-55°C to +125°C Operation
s
All Inputs and Outputs Fully TTL or CMOS
Compatible
s
Fully Static Operation
s
Data Retention at 2V Supply
Figure 1: Truth Table
Figure 2: Block Diagram
1/12
MA5114
CHARACTERISTICS AND RATINGS
Symbol
V
CC
V
I
T
A
T
S
Parameter
Supply Voltage
Input Voltage
Operating Temperature
Storage Temperature
Min.
-0.5
-0.3
-55
-65
Max.
7
V
DD
+0.3
125
150
Units
V
V
°C
°C
Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functlonal operation of the device at these condltions,
or at any other condition above those indicated in the
operations section of this specification, is not Implied
Exposure to absolute maxlmum rating conditions for
extended perlods may affect device reliability.
Figure 3: Absolute Maximum Ratings
Notes for Tables 4 and 5:
1. Characteristics apply to pre radiation at T
A
= -55°C to +125°C with V
DD
= 5V
±10%
and to post 100k Rad(Si) total dose
radiation at T
A
= 25°C with V
DD
= 5V
±10%
(characteristics at higher radiation levels available on request).
2. Worst case at T
A
= +125°C, guaranteed but not tested at T
A
= -55°C.
GROUP A SUBGROUPS 1, 2, 3.
Symbol
V
DD
V
lH
V
lL
V
OH
V
OL
I
LI
I
LO
I
PUI
I
PDI
I
DD
I
SB1
I
SB2
Parameter
Supply voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current (note 2)
Output Leakage Current (note 2)
Input Pull-Up Current
Input Leakage Current
Power Supply Current
Selected Supply Current
Standby Supply Current
Conditions
-
-
-
I
OH1
= -1mA
I
OL
= 2mA
All inputs except
CS
Output disabled, V
OUT
= V
SS
or V
DD
V
IN
= V
SS
on
CS
input only
V
IN
= V
SS
on
CS
input only
f
RC
= 1MHz,
CS
= 50% mark:space-
CS
= V
SS
Chip disabled
Min.
4.5
V
DD
/2
V
SS
2.4
-
-
-
-
-
12
-
-
Typ.
5.0
-
-
-
-
-
-
-
-
16
25
50
Max.
5.5
V
DD
0.8
-
0.4
±10
±20
-100
5
mA
35
3000
mA
µA
Units
V
V
V
V
V
µA
µA
µA
µA
Figure 4: Electrical Characteristics
Symbol
V
DR
I
DDR
Parameter
V
CC
for Data Retention
Data Retention Current
Conditions
CS
= V
DR
CS
= V
DR
, V
DR
= 2.0V
Min.
2.0
-
Typ.
-
30
Max.
-
2000
Units
V
µA
Figure 5: Data Retention Characteristics
2/12
MA5114
AC CHARACTERISTICS
Conditions of Test for Tables 5 and 6:
1. Input pulse = V
SS
to 3.0V.
2. Times measurement reference level = 1.5V.
3. Transition is measured at
±500mV
from steady state.
4. This parameter is sampled and not 100% tested.
Notes for Tables 6 and 7:
Characteristics apply to pre-radiation at T
A
= -55°C to +125°C with V
DD
= 5V±10% and to post 100k Rad(Si) total dose radiation
at T
A
= 25°C with V
DD
= 5V
±10%.
GROUP A SUBGROUPS 9, 10, 11.
Symbol
T
AVAVR
T
AVQV
T
ELQV
T
ELQX
(3,4)
T
ELQZ
(3,4)
T
AXQX
Parameter
Read Cycle Time
Address Access Time
Chip Select to Output Valid
Chip Select to Output Active
Chip Select to Output Tri State
Output Hold from Address Change
Min
135
-
-
10
10
10
Max
-
135
135
-
50
-
Units
ns
ns
ns
ns
ns
ns
Figure 6: Read Cycle AC Electrical Characteristics
Symbol
T
AVAVW
T
AVWL
T
WLWH
T
WHAV
T
DVWH
T
NHDX
T
WLQZ
(3,4)
T
ELWL
T
ELWH
T
AVWH
T
WHQX
(3,4)
Parameter
Write Cycle Tlme
Address Set Up Time
Write Pulse Width
Write Recovery Time
Data Set Up Time
Data Hold Time
Write Enable to Output Tri State
Chip Selection to Write Low
Chip Selection to End of Write
Address Valid to End of Write
Output Active from End to Write
Min
135
10
50
5
35
5
10
25
85
80
5
Max
-
-
-
-
-
-
50
-
-
-
-
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Figure 7: Write Cycle AC Electrical Characteristics
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
l
= 0V
V
O
= 0V
Min.
-
-
Typ.
6
8
Max.
10
12
Units
pF
pF
Note: T
A
= 25°C and f = 1MHz. Data obtained by characterisation or analysis; not routinely measured.
Figure 8: Capacitance
3/12
MA5114
Symbol
F
T
Parameter
Basic Functionality
Conditions
V
DD
= 4.5V - 5.5V, FREQ = 1MHz
V
IL
= V
SS
, V
IH
= V
DD
, V
OL
≤
1.5V, V
OH
≥
1.5V
TEMP = -55°C to +125°C, GPS PATTERN SET
GROUP A SUBGROUPS 7, 8A, 8B
Figure 9: Functionality
Subgroup
1
2
3
7
8A
8B
9
10
11
Definition
Static characteristics specified in Tables 4 and 5 at +25°C
Static characteristics specified in Tables 4 and 5 at +125°C
Static characteristics specified in Tables 4 and 5 at -55°C
Functional characteristics specified in Table 9 at +25°C
Functional characteristics specified in Table 9 at +125°C
Functional characteristics specified in Table 9 at -55°C
Switching characteristics specified in Tables 6 and 7 at +25°C
Switching characteristics specified in Tables 6 and 7 at +125°C
Switching characteristics specified in Tables 6 and 7 at -55°C
Figure 10: Definition of Subgroups
4/12
MA5114
TIMING DIAGRAMS
T
AVAVR
ADDRESS
T
AVQV
T
ELQV
CS
T
ELQX
HIGH
IMPEDANCE
T
AXQX
T
EHQZ
DATA OUT
DATA VALID
1.
WE
is high for Read Cycle.
2. Address Vaild prior to or coincident with
CS
transition low.
Figure 11a: Read Cycle 1
T
AVAVR
ADDRESS
T
AVQV
DATA OUT
T
AXQX
DATA VALID
1.
WE
is high for Read Cycle.
2. Device is continually selected.
CS
low.
Figure 11b: Read Cycle 2
5/12
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