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HM66WP36257FP-85: 产品描述ZBT SRAM, 256KX36, 8.5ns, CMOS, PQFP100, LQFP-100; 产品类别存储存储; 文件大小199KB，共23页; 制造商Hitachi （Renesas ）; 官网地址http://www.renesas.com/eng/

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HM66WP36257FP-85概述

ZBT SRAM, 256KX36, 8.5ns, CMOS, PQFP100, LQFP-100

HM66WP36257FP-85规格参数

参数名称	属性值
厂商名称	Hitachi （Renesas ）
零件包装代码	QFP
包装说明	LQFP,
针数	100
Reach Compliance Code	unknown
ECCN代码	3A991.B.2.A
最长访问时间	8.5 ns
其他特性	FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY
JESD-30 代码	R-PQFP-G100
长度	20 mm
内存密度	9437184 bit
内存集成电路类型	ZBT SRAM
内存宽度	36
功能数量	1
端子数量	100
字数	262144 words
字数代码	256000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	256KX36
封装主体材料	PLASTIC/EPOXY
封装代码	LQFP
封装形状	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE
并行/串行	PARALLEL
认证状态	Not Qualified
座面最大高度	1.6 mm
最大供电电压 (Vsup)	2.625 V
最小供电电压 (Vsup)	2.375 V
标称供电电压 (Vsup)	2.5 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子形式	GULL WING
端子节距	0.65 mm
端子位置	QUAD
宽度	14 mm

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HM66WP18513/HM66WP36257

9M Flow Through Zero Bus Latency (ZBL) SRAM

(HM66WP18513) 512-Kword

18-bit

(HM66WP36257) 256-Kword

36-bit

ADE-203-1285D (Z)

Preliminary

Rev. 0.4

Jun. 21, 2002

Description

The HM66WP18513 is a synchronous fast static RAM organized as 512-Kword

18-bit. The

HM66WP36257 is a synchronous fast static RAM organized as 256-Kword

36-bit. It has realized high

speed access time by employing the most advanced CMOS process and high speed circuit designing

technology. It is most appropriate for the application which requires high speed, high density memory and

wide bit width configuration, such as cache and buffer memory in system. It is packaged in standard 100-

pin LQFP.

Note : All power supply(V

DDQ

) and ground(V

) pins must be connected for proper operation of the

device.

ZBL : Zero Bus Latency and compatible ZBT SRAM. ZBT is trademark of Integrated Device

Technology, Inc.,

Features

•

3.3 V or 2.5V power supply, 3.3 V or 2.5 V I/O supply voltage

•

Clock frequency: 133/100 MHz

•

Fast clock access time: 6.5/8.5 ns (max)

•

Low operating current: 200/160 mA (max)

•

Address data pipeline capability

•

Internal input registers (Address, Data, Control)

•

Internal self-timed write cycle

•

ADV/LD burst control pins

•

Asynchronous output enable controlled three-state outputs

•

Individual byte write control

•

Power down state via ZZ

•

Common data inputs and data outputs

•

High board density 100-pin LQFP package

•

Burst control selected pin

LBO

(Interleave or linear burst order)

Preliminary: The specifications of this device are subject to change without notice. Please contact your

nearest Hitachi’s Sales Dept. regarding specifications.

HM66WP36257FP-85相似产品对比

	HM66WP36257FP-85	HM66WP18513FP-85	HM66WP18513FP-65	HM66WP36257FP-65
描述	ZBT SRAM, 256KX36, 8.5ns, CMOS, PQFP100, LQFP-100	ZBT SRAM, 512KX18, 8.5ns, CMOS, PQFP100, LQFP-100	ZBT SRAM, 512KX18, 6.5ns, CMOS, PQFP100, LQFP-100	ZBT SRAM, 256KX36, 6.5ns, CMOS, PQFP100, LQFP-100
零件包装代码	QFP	QFP	QFP	QFP
包装说明	LQFP,	LQFP,	LQFP,	LQFP,
针数	100	100	100	100
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	8.5 ns	8.5 ns	6.5 ns	6.5 ns
其他特性	FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY	FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY	FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY	FLOW-THROUGH ARCHITECTURE; CAN ALSO OPERATE AT 3.3V SUPPLY
JESD-30 代码	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100
长度	20 mm	20 mm	20 mm	20 mm
内存密度	9437184 bit	9437184 bit	9437184 bit	9437184 bit
内存集成电路类型	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM
内存宽度	36	18	18	36
功能数量	1	1	1	1
端子数量	100	100	100	100
字数	262144 words	524288 words	524288 words	262144 words
字数代码	256000	512000	512000	256000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C
组织	256KX36	512KX18	512KX18	256KX36
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LQFP	LQFP	LQFP	LQFP
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.6 mm	1.6 mm	1.6 mm	1.6 mm
最大供电电压 (Vsup)	2.625 V	2.625 V	2.625 V	2.625 V
最小供电电压 (Vsup)	2.375 V	2.375 V	2.375 V	2.375 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.65 mm	0.65 mm	0.65 mm	0.65 mm
端子位置	QUAD	QUAD	QUAD	QUAD
宽度	14 mm	14 mm	14 mm	14 mm
厂商名称	Hitachi （Renesas ）	-	Hitachi （Renesas ）	Hitachi （Renesas ）

HM66WP36257FP-85

HM66WP36257FP-85概述

HM66WP36257FP-85规格参数

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HM66WP36257FP-85相似产品对比

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