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JANTXV1N758A-1

产品描述Zener Diode, 10V V(Z), 5%, 0.4W, Silicon, Unidirectional,
产品类别分立半导体    二极管   
文件大小70KB,共19页
制造商Bkc Semiconductors Inc
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JANTXV1N758A-1概述

Zener Diode, 10V V(Z), 5%, 0.4W, Silicon, Unidirectional,

JANTXV1N758A-1规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Bkc Semiconductors Inc
Reach Compliance Codeunknown
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
最大动态阻抗7 Ω
JESD-30 代码O-LALF-W2
JESD-609代码e0
元件数量1
端子数量2
最高工作温度175 °C
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
极性UNIDIRECTIONAL
最大功率耗散0.4 W
认证状态Not Qualified
标称参考电压10 V
最大反向电流0.1 µA
表面贴装NO
技术ZENER
端子面层Tin/Lead (Sn/Pb)
端子形式WIRE
端子位置AXIAL
电压温度Coeff-Max6 mV/°C
最大电压容差5%
工作测试电流20 mA

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The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 08 October 1999.
INCH-POUND
MIL-PRF-19500/127N
09 July 1999
SUPERSEDING
MIL-S-19500/127M
14 March 1994
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
TYPES 1N4370A-1 THROUGH 1N4372A-1, AND 1N746A-1 THROUGH 1N759A-1, 1N4370AUR-1 THROUGH 1N4372AUR-1 AND
1N746AUR-1 THROUGH 1N759AUR-1, 1N4370C-1 THROUGH 1N4372C-1, AND 1N746C-1 THROUGH 1N759C-1, 1N4370CUR-1
THROUGH 1N4372CUR-1 AND 1N746CUR-1 THROUGH 1N759CUR-1, 1N4370D-1, THROUGH 1N4372D-1, AND 1N746D-1
THROUGH 1N759D-1, 1N4370DUR-1 THROUGH 1N4372DUR-1 AND 1N746DUR-1 THROUGH 1N759DUR-1,
JAN, JANTX, JANTXV, JANHC, AND JANKC
JANS level (see 6.3).
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator diodes with voltage
tolerances of 5, 2, and 1 percent. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
Two level of product assurance is provided for die.
1.2 Physical dimensions. See 3.3 and figure 1 (similar to DO-35) and figure 2 (similar to DO-213AA), and figures 3 and 4 for die.
1.3 Maximum ratings. Maximum ratings are as shown in column 4 table II herein and as follows:
P
T
= 500 mW, (DO-35) at T
L
= +50
°
C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink at
L = .375 inch (9.53 mm). Derate I
Z
to 0.0 mA dc at +175
°
C.
-65
°
C
T
J
+175
°
C; -65
°
C
T
STG
+175
°
C
P
T
= 500 mW, (DO-213AA) at T
EC
= +125
°
C, derate to 0 at +175
°
C.
1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in columns 2, 9, 12, and 14 table II herein and as
follows:
2.4 V dc
V
Z
12 v dc
1N4370A-1 through 1N4372A-1 and 1N746A-1 through 1N759A-1 are
±
5 percent voltage tolerance.
1N4370C-1 through 1N4372C-1 and 1N746C-1 through 1N759C-1 are
±
2 percent voltage tolerance.
1N4370D-1 through 1N4372D-1 and 1N746D-1 through 1N759D-1 are
±
1 percent voltage tolerance.
Thermal resistance:
R
θ
JL
= 250
°
C/W maximum at L = .375 inch (9.53 mm) (D0-35).
R
θ
JEC
= 100
°
C/W maximum. Junction to end-caps (D0-213AA).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
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