DIODE SILICON, VHF BAND, MIXER DIODE, HERMETIC SEALED, GLASS, MICROMELF-2, Microwave Mixer Diode
参数名称 | 属性值 |
是否无铅 | 不含铅 |
是否Rohs认证 | 符合 |
厂商名称 | Vishay(威世) |
零件包装代码 | MELF |
包装说明 | O-LELF-R2 |
针数 | 2 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
外壳连接 | ISOLATED |
配置 | SINGLE |
最大二极管电容 | 1.2 pF |
二极管元件材料 | SILICON |
二极管类型 | MIXER DIODE |
最大正向电压 (VF) | 1 V |
频带 | VERY HIGH FREQUENCY |
JESD-30 代码 | O-LELF-R2 |
JESD-609代码 | e2 |
湿度敏感等级 | 1 |
元件数量 | 1 |
端子数量 | 2 |
最高工作温度 | 150 °C |
封装主体材料 | GLASS |
封装形状 | ROUND |
封装形式 | LONG FORM |
峰值回流温度(摄氏度) | NOT SPECIFIED |
认证状态 | Not Qualified |
最大重复峰值反向电压 | 35 V |
表面贴装 | YES |
技术 | PLANAR DOPED BARRIER |
端子面层 | Tin/Silver (Sn/Ag) |
端子形式 | WRAP AROUND |
端子位置 | END |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
BA1283-GS08 | BA1282-GS08 | BA1283-GS18 | BA1282-GS18 | |
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描述 | DIODE SILICON, VHF BAND, MIXER DIODE, HERMETIC SEALED, GLASS, MICROMELF-2, Microwave Mixer Diode | DIODE SILICON, VHF BAND, MIXER DIODE, HERMETIC SEALED, GLASS, MICROMELF-2, Microwave Mixer Diode | DIODE SILICON, VHF BAND, MIXER DIODE, HERMETIC SEALED, GLASS, MICROMELF-2, Microwave Mixer Diode | DIODE SILICON, VHF BAND, MIXER DIODE, HERMETIC SEALED, GLASS, MICROMELF-2, Microwave Mixer Diode |
是否无铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 |
厂商名称 | Vishay(威世) | Vishay(威世) | Vishay(威世) | Vishay(威世) |
零件包装代码 | MELF | MELF | MELF | MELF |
包装说明 | O-LELF-R2 | O-LELF-R2 | O-LELF-R2 | O-LELF-R2 |
针数 | 2 | 2 | 2 | 2 |
Reach Compliance Code | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
配置 | SINGLE | SINGLE | SINGLE | SINGLE |
最大二极管电容 | 1.2 pF | 1.25 pF | 1.2 pF | 1.25 pF |
二极管元件材料 | SILICON | SILICON | SILICON | SILICON |
二极管类型 | MIXER DIODE | MIXER DIODE | MIXER DIODE | MIXER DIODE |
最大正向电压 (VF) | 1 V | 1 V | 1 V | 1 V |
频带 | VERY HIGH FREQUENCY | VERY HIGH FREQUENCY | VERY HIGH FREQUENCY | VERY HIGH FREQUENCY |
JESD-30 代码 | O-LELF-R2 | O-LELF-R2 | O-LELF-R2 | O-LELF-R2 |
JESD-609代码 | e2 | e2 | e2 | e2 |
湿度敏感等级 | 1 | 1 | 1 | 1 |
元件数量 | 1 | 1 | 1 | 1 |
端子数量 | 2 | 2 | 2 | 2 |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | GLASS | GLASS | GLASS | GLASS |
封装形状 | ROUND | ROUND | ROUND | ROUND |
封装形式 | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
最大重复峰值反向电压 | 35 V | 35 V | 35 V | 35 V |
表面贴装 | YES | YES | YES | YES |
技术 | PLANAR DOPED BARRIER | PLANAR DOPED BARRIER | PLANAR DOPED BARRIER | PLANAR DOPED BARRIER |
端子面层 | Tin/Silver (Sn/Ag) | Tin/Silver (Sn/Ag) | Tin/Silver (Sn/Ag) | Tin/Silver (Sn/Ag) |
端子形式 | WRAP AROUND | WRAP AROUND | WRAP AROUND | WRAP AROUND |
端子位置 | END | END | END | END |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
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