AP92U03GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Low On-resistance
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
30V
3.8mΩ
75A
S
G
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
□
resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP92U03GJ) are
available for low-profile applications.
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
4
.
Rating
30
+20
75
57
300
50
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
2.5
62.5
110
Units
℃/W
℃/W
℃/W
1
201501275
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
AP92U03GH/J-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
2
o
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=40A
V
GS
=4.5V, I
D
=30A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=40A
V
DS
=30V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=30A
V
DS
=24V
V
GS
=4.5V
V
DS
=15V
I
D
=30A
R
G
=2.4Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
70
-
-
34
6
20
10
70
34
11
405
345
1.2
Max. Units
-
3.8
6.5
3
-
10
+100
54
-
-
-
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
2685 4300
.
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
2
Test Conditions
I
S
=40A, V
GS
=0V
I
S
=10A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
34
33
Max. Units
1.2
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board
4.Package limitation current is 75A .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP92U03GH/J-HF
240
160
T
C
=25 C
200
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
T
C
=150
o
C
120
10V
7.0V
6.0V
5.0V
V
G
=4.0V
160
120
80
80
40
40
0
0.0
2.0
4.0
6.0
8.0
10.0
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
6
2.0
I
D
=30A
T
C
=25 C
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
1.6
o
I
D
=40A
V
G
=10V
5
.
4
1.2
0.8
3
2
4
6
8
10
0.4
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
40
30
1.2
T
j
=150
o
C
20
T
j
=25
o
C
Normalized V
GS(th)
1.4
I
S
(A)
0.8
10
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP92U03GH/J-HF
10
4000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
I
D
=30A
8
6
C (pF)
V
DS
=15V
V
DS
=18V
V
DS
=24V
3000
C
iss
2000
4
1000
2
C
oss
C
rss
0
0
10
20
30
40
50
60
1
5
9
13
17
21
25
29
0
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
100
I
D
(A)
Operation in this
area limited by
R
DS(ON)
Normalized Thermal Response (R
thjc
)
Duty factor = 0.5
0.2
0.1
0.1
0.05
P
DM
100us
.
10
t
0.02
0.01
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
T
C
=25
o
C
Single Pulse
1
0.01
0.1
1
10
1ms
10ms
100ms
DC
100
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP92U03GH/J-HF
MARKING INFORMATION
TO-251
92U03GJ
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-252
92U03GH
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
.
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
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