IRF8910PbF-1
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
20
13.4
V
mΩ
S1
G1
S2
G2
1
2
8
7
D1
D1
D2
D2
R
DS(on) max
(@V
GS
= 4.5V)
3
4
6
5
18.3
7.4
10
nC
A
Q
g (typical)
I
D
(@T
A
= 25°C)
Top View
SO-8
Features
Benefits
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF8910PbF-1
Package Type
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF8910PbF-1
IRF8910TRPbF-1
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
20
± 20
10
8.3
82
2.0
1.3
0.016
-55 to + 150
Units
V
c
A
W
W/°C
°C
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
42
62.5
Units
°C/W
fg
Notes
through
are on page 10
1
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2014 International Rectifier
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June 30, 2014
IRF8910PbF-1
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
/ΔT
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
20
–––
–––
–––
1.65
–––
–––
–––
–––
–––
24
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.015
10.7
14.6
–––
-4.8
–––
–––
–––
–––
–––
7.4
2.4
0.80
2.5
1.7
3.3
4.4
6.2
10
9.7
4.1
960
300
160
–––
–––
13.4
18.3
2.55
–––
1.0
150
100
-100
–––
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
pF
nC
ns
nC
V
Conditions
V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 10A
V
V
GS
= 4.5V, I
D
V
DS
= V
GS
, I
D
= 250μA
e
= 8.0A
e
mV/°C
μA
V
DS
= 16V, V
GS
= 0V
nA
S
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 8.2A
V
DS
= 10V
V
GS
= 4.5V
I
D
= 8.2A
See Fig. 6
V
DS
= 10V, V
GS
= 0V
V
DD
= 10V, V
GS
= 4.5V
I
D
= 8.2A
Clamped Inductive Load
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
Max.
19
8.2
Units
mJ
A
Avalanche Characteristics
E
AS
I
AR
d
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
17
6.5
2.5
A
82
1.0
26
9.7
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 8.2A, V
GS
= 0V
T
J
= 25°C, I
F
= 8.2A, V
DD
= 10V
di/dt = 100A/μs
e
e
2
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2014 International Rectifier
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June 30, 2014
IRF8910PbF-1
100
TOP
VGS
10V
8.0V
5.5V
4.5V
3.5V
3.0V
2.8V
2.5V
100
TOP
VGS
10V
8.0V
5.5V
4.5V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
1
10
2.5V
0.1
≤
60μs PULSE WIDTH
0.01
0.1
1
Tj = 25°C
1
100
0.1
10
2.5V
≤
60μs PULSE WIDTH
Tj = 150°C
10
100
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
1.5
10
T J = 150°C
1
T J = 25°C
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α)
ID = 10A
VGS = 10V
1.0
0.1
1
2
3
VDS = 10V
≤60μs
PULSE WIDTH
4
5
6
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
3
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2014 International Rectifier
Fig 4.
Normalized On-Resistance
vs. Temperature
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June 30, 2014
IRF8910PbF-1
10000
C oss = C ds + C gd
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
6.0
ID= 8.2A
5.0
4.0
3.0
2.0
1.0
0.0
VDS= 16V
VDS= 10V
C, Capacitance(pF)
1000
Ciss
Coss
Crss
100
1
10
100
0
1
2
3
4
5
6
7
8
9
10
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10.00
T J = 150°C
1.00
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100μsec
1msec
0.10
T J = 25°C
1
0.01
0.2
0.4
0.6
0.8
1.0
VGS = 0V
T A = 25°C
Tj = 150°C
Single Pulse
0
1
10
10msec
0.1
1.2
1.4
1.6
100
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
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©
2014 International Rectifier
Fig 8.
Maximum Safe Operating Area
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IRF8910PbF-1
10
VGS(th) Gate threshold Voltage (V)
2.5
9
8
ID, Drain Current (A)
7
6
5
4
3
2
1
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
2.0
ID = 250μA
1.5
1.0
-75
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
Fig 10.
Threshold Voltage vs. Temperature
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
1
0.02
0.01
τ
J
τ
J
τ
1
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
4
R
5
R
5
τ
5
Ri (°C/W)
1.2647
τ
C
τ
C
0.000091
0.000776
0.188739
0.757700
τi
(sec)
2.0415
18.970
23.415
τ
2
τ
3
τ
4
τ
5
0.1
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci=
τi/Ri
16.803
25.10000
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.1
1
10
100
0.01
1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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2014 International Rectifier
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June 30, 2014
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