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74LVC1G99

产品描述Ultra-configurable multiple function gate; 3-state
文件大小201KB,共29页
制造商NXP(恩智浦)
官网地址https://www.nxp.com
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74LVC1G99概述

Ultra-configurable multiple function gate; 3-state

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74LVC1G99
Ultra-configurable multiple function gate; 3-state
Rev. 04 — 16 April 2010
Product data sheet
1. General description
The 74LVC1G99 provides a low voltage, ultra-configurable, multiple function gate with
3-state output. The device can be configured as one of several logic functions including,
AND, OR, NAND, NOR, XOR, XNOR, inverter, buffer and MUX. No external components
are required to configure the device as all inputs can be connected directly to V
CC
or
GND. The 3-state output is controlled by the output enable input (OE). A HIGH level at OE
causes the output (Y) to assume a high-impedance OFF-state. When OE is LOW, the
output state is determined by the signals applied to the Schmitt-trigger inputs (A, B, C and
D).
Due to the use of Schmitt-trigger inputs the device is tolerant of slowly changing input
signals, transforming them into sharply defined, jitter free output signals. By eliminating
leakage current paths to V
CC
and GND, the inputs and disabled output are also
over-voltage tolerant, making the device suitable for mixed-voltage applications.
This device is fully specified for partial power-down applications using I
OFF
.
The I
OFF
circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
The 74LVC1G99 is fully specified over the supply range from 1.65 V to 5.5 V.
2. Features and benefits
Wide supply voltage range from 1.65 V to 5.5 V
5 V tolerant inputs for interfacing with 5 V logic
High noise immunity
Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8-B/JESD36 (2.7 V to 3.6 V)
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
±24
mA output drive (V
CC
= 3.0 V)
CMOS low power consumption
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Inputs accept voltages up to 5 V
Multiple package options
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C.

74LVC1G99相似产品对比

74LVC1G99 74LVC1G99GF 74LVC1G99GM 74LVC1G99DP 74LVC1G99GD 74LVC1G99GT 74LVC1G99_10
描述 Ultra-configurable multiple function gate; 3-state Ultra-configurable multiple function gate; 3-state Ultra-configurable multiple function gate; 3-state Ultra-configurable multiple function gate; 3-state Ultra-configurable multiple function gate; 3-state Ultra-configurable multiple function gate; 3-state Ultra-configurable multiple function gate; 3-state
是否Rohs认证 - 符合 符合 符合 符合 符合 -
厂商名称 - NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) -
零件包装代码 - SON QFN SOIC SON SON -
包装说明 - 1.35 X 1 MM, 0.50 MM HEIGHT, MO-252, SOT-1089, SON-8 1.60 X 1.60 MM, 0.50 MM HEIGHT, PLASTIC, MO-255, SOT902-1, QFN-8 3 MM, PLASTIC, SOT505-2, TSSOP-8 3 X 2 MM, 0.50 MM HEIGHT, PLASTIC, SOT996-2, SON-8 1 X 1.95 MM, 0.50 MM HEIGHT, PLASTIC, MO-252, SOT833-1, SON-8 -
针数 - 8 8 8 8 8 -
Reach Compliance Code - unknow compli compli unknow compli -
系列 - LVC/LCX/Z LVC/LCX/Z LVC/LCX/Z LVC/LCX/Z LVC/LCX/Z -
JESD-30 代码 - R-PDSO-N8 S-PQCC-N8 S-PDSO-G8 R-PDSO-N8 R-PDSO-N8 -
JESD-609代码 - e3 e4 e4 - e3 -
长度 - 1.35 mm 1.6 mm 3 mm 3 mm 1.95 mm -
逻辑集成电路类型 - MAJORITY LOGIC GATE MAJORITY LOGIC GATE MAJORITY LOGIC GATE MAJORITY LOGIC GATE MAJORITY LOGIC GATE -
湿度敏感等级 - 1 1 1 1 1 -
功能数量 - 1 1 1 1 1 -
输入次数 - 4 4 4 4 4 -
端子数量 - 8 8 8 8 8 -
最高工作温度 - 125 °C 125 °C 125 °C 125 °C 125 °C -
最低工作温度 - -40 °C -40 °C -40 °C -40 °C -40 °C -
输出特性 - 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE -
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
封装代码 - VSON VQCCN TSSOP VSON VSON -
封装形状 - RECTANGULAR SQUARE SQUARE RECTANGULAR RECTANGULAR -
封装形式 - SMALL OUTLINE, VERY THIN PROFILE CHIP CARRIER, VERY THIN PROFILE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, VERY THIN PROFILE SMALL OUTLINE, VERY THIN PROFILE -
峰值回流温度(摄氏度) - 260 260 260 260 260 -
传播延迟(tpd) - 38.5 ns 38.5 ns 38.5 ns 38.5 ns 38.5 ns -
认证状态 - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
座面最大高度 - 0.5 mm 0.5 mm 1.1 mm 0.5 mm 0.5 mm -
最大供电电压 (Vsup) - 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V -
最小供电电压 (Vsup) - 1.65 V 1.65 V 1.65 V 1.65 V 1.65 V -
标称供电电压 (Vsup) - 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V -
表面贴装 - YES YES YES YES YES -
技术 - CMOS CMOS CMOS CMOS CMOS -
温度等级 - AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE -
端子面层 - PURE TIN NICKEL PALLADIUM GOLD NICKEL PALLADIUM GOLD - Tin (Sn) -
端子形式 - NO LEAD NO LEAD GULL WING NO LEAD NO LEAD -
端子节距 - 0.35 mm 0.5 mm 0.65 mm 0.5 mm 0.5 mm -
端子位置 - DUAL QUAD DUAL DUAL DUAL -
处于峰值回流温度下的最长时间 - 30 30 30 30 30 -
宽度 - 1 mm 1.6 mm 3 mm 2 mm 1 mm -

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