Agilent HLMP-HD57
5 mm Precision Optical Performance
Red Oval LED Lamps
Data Sheet
Features
• Well defined spatial radiation
pattern
• High brightness material
• Red AlInGaP 630 nm
Benefits
• Viewing angle designed for wide
field of view applications
• Superior performance for outdoor
environments
Description
This Precision Optical Perfor-
mance Oval LED is specifically
designed for Full Color/Video and
Passenger Information Signs. The
Oval shaped radiation pattern and
high luminous intensity ensure
that this device is excellent for
wide field of view outdoor applica-
tions where a wide viewing angle
and readability in sunlight are
essential. This lamp has very
smooth, matched radiation pat-
terns ensuring consistent color
mixing in full color applications,
message uniformity across the
viewing angle of the sign. High
efficiency LED material is used in
this lamp: Aluminium Indium
Gallium Phosphide (AlInGaP) for
Red Color. The higher perfor-
mance AlInGaP II is used.
Applications
• Full color signs
• Commercial outdoor advertising
Package Dimensions
NOTE: MEASURED JUST ABOVE FLANGE.
10.85 ± 0.50
(0.427 ± 0.019)
1.20
(0.047)
0.50 ± 0.10
(0.019 ± 0.003)
3.80
(0.150)
5.20
(0.204)
CATHODE
LEAD
2.54
(0.10)
1.50 MAX.
(0.059)
7.00
(0.275)
1.00 MIN.
(0.039)
25.00 MIN.
(0.984)
NOTES:
1. DIMENSIONS IN MILLIMETERS (INCHES).
2. TOLERANCE ± 0.25 mm UNLESS OTHERWISE NOTED.
Device Selection Guide
Color and
Dominant
Wavelength
λ
d
(nm) Typ.
Red 630
Luminous
Intensity
Iv (mcd) at
20 mA Min.
590
Luminous
Intensity
Iv (mcd) at
20 mA Max.
2200
Part Number
HLMP-HD57-NR000
Tinting
Type
Red
Notes:
1. The luminous intensity is measured on the mechanical axis of the lamp package.
2. The optical axis is closely aligned with the package mechanical axis.
3. The dominant wavelength,
λ
d
, is derived from the Chromaticity Diagram and represents the color of the lamp.
Part Numbering System
HLMP - x x xx - x x x xx
Mechanical Options
00: Bulk Packaging
DD: Ammo Pack
Color Bin Selections
0: No Color Bin Limitation
Maximum Intensity Bin
0: No Iv Bin Limitation
Minimum Intensity Bin
Refer to Device Selection Guide
Color
D: 630 nm Red
Package
H: 5 mm Oval 40º x 100º
2
Absolute Maximum Ratings at T
A
= 25˚C
Parameter
DC Forward Current
[1]
Peak Pulsed Forward Current
Average Forward Current
Power Dissipation
Reverse Voltage
LED Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Note:
1. Derate linearly as shown in Figure 3.
Value
50 mA
100 mA
30 mA
140 mW
5 V (I
R
= 100
µA)
130˚C
–40˚C to + 85˚C
–40˚C to +120˚C
260˚C for 5 secs
Electrical/Optical Characteristics
T
A
= 25˚C
Parameter
Forward Voltage
Reverse Voltage
Capacitance
Thermal Resistance
Viewing Angle
Major Axis
Minor Axis
Dominant Wavelength
Peak Wavelength
Symbol
V
F
V
R
C
Rθ
J-PIN
Min.
5
Typ.
2.2
20
40
240
Max.
2.4
Units
V
pF
˚C/W
Test Conditions
I
F
= 20 mA
I
R
= 100
µA
V
F
= 0, f = 1 MHz
LED Junction-to-Cathode
Lead
2θ
1/2
λ
d
λ
p
100
40
630
639
deg
nm
nm
I
F
= 20 mA
Peak of Wavelength of
Spectral Distribution at
I
F
= 20 mA
Wavelength Width at
Spectral Distribution Power
Point at I
F
= 20 mA
Emitted luminous power/
Emitted radiant power
Spectral Halfwidth
∆λ
1/2
17
nm
Luminous Efficacy
η
v
155
lm/W
Notes:
1.
2θ
1/2
is the off-axis angle where the luminous intensity is 1/2 the on axis intensity.
2. The radiant intensity, Ie in watts per steradian, may be found from the equation Ie = Iv/η
v
where Iv is the luminous intensity in
candelas and
η
v
is the luminous efficacy in lumens/watt.
3
1.0
RELATIVE INTENSITY
(NORMALIZED AT 20 mA)
2.5
FORWARD CURRENT – mA
60
Rθ
J-A
= 585°C/W
50
40
Rθ
J-A
= 780°C/W
30
20
10
0
RELATIVE INTENSITY
2.0
1.5
0.5
1.0
0.5
0
550
0
600
650
700
0
10
20
30
40
50
0
20
40
60
80
100
WAVELENGTH – nm
FORWARD CURRENT – mA
AMBIENT TEMPERATURE – °C
Figure 1. Relative intensity vs. wavelength.
Figure 2. Relative luminous intensity vs.
forward current.
Figure 3. Forward current vs. ambient
temperature.
50
I
F
– FORWARD CURRENT – mA
1.0
30
RELATIVE INTENSITY
40
0.5
20
10
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
-90
-70
-50
-30
-10
10
30
50
70
90
V
F
– FORWARD VOLTAGE – V
ANGLE – DEGREES
Figure 4. Forward current vs. forward voltage.
Figure 5. Spatial radiation pattern-minor axis.
1.0
0.5
Intensity Bin Limits (mcd at 20 mA)
Bin Name
Min.
Max.
M
520
680
N
680
880
P
880
1150
Q
1150
1500
R
1500
1900
-70
-50
-30
-10
10
30
50
70
90
RELATIVE INTENSITY
0
-90
ANGLE – DEGREES
Tolerance will be
±
15% of these limits.
Note:
1. Bin categories are established for
classification of products. Products may
not be available in all bin categories.
Figure 6. Spatial radiation pattern-major axis.
www.semiconductor.agilent.com
Data subject to change.
Copyright © 2001 Agilent Technologies, Inc.
October 19, 2001
5988-4074EN
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